发布求助
文献互助 智能选刊 最新文献

2017 IEEE Photonics Conference (IPC) Part II最新文献

筛选
英文 中文
30-GHz small-signal modulation bandwidth with directly current-modulated 980-nm oxide-aperture VCSELs 30 ghz小信号调制带宽，直接电流调制980 nm氧化孔径VCSELs
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116210
R. Rosales, M. Zorn, J. Lott
{"title":"30-GHz small-signal modulation bandwidth with directly current-modulated 980-nm oxide-aperture VCSELs","authors":"R. Rosales, M. Zorn, J. Lott","doi":"10.1109/IPCON.2017.8116210","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116210","url":null,"abstract":"Directly current-modulated 980-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture-diameters of 1.5-μm exhibit small-signal −3-dB modulation bandwidths of 31 and 25-GHz and maximum single-mode light-output-powers of 3 and 2-mW at 25 and 85°C, respectively. The side-mode-suppression-ratio exceeds 40-dB at bias currents above threshold.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"21 1","pages":"533-534"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72643482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Petahertz optical drive with wide-bandgap materials 宽带隙材料的千赫兹光驱
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116179
H. Mashiko, K. Oguri, Yuta Chisuga, Hiroyuki Masuda, Tomohiko Yamaguchi, A. Suda, I. Katayama, J. Takeda, H. Gotoh
{"title":"Petahertz optical drive with wide-bandgap materials","authors":"H. Mashiko, K. Oguri, Yuta Chisuga, Hiroyuki Masuda, Tomohiko Yamaguchi, A. Suda, I. Katayama, J. Takeda, H. Gotoh","doi":"10.1109/IPCON.2017.8116179","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116179","url":null,"abstract":"We studied petahertz electronic oscillations with 1.16-PHz frequency using gallium nitride (GaN) wide-bandgap semiconductor. An isolated attosecond pulse with coherent broadband spectrum reveals dipole oscillation with 860-as periodicity in the GaN electron and hole system.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"44 1","pages":"451-452"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77739096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Universality of ultrafast semi-metallization in dielectrics in PHz domain 超快半金属化在介电介质中PHz域的普遍性
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116230
Ojoon Kwon, V. Apalkov, M. Stockman, D. Kim
{"title":"Universality of ultrafast semi-metallization in dielectrics in PHz domain","authors":"Ojoon Kwon, V. Apalkov, M. Stockman, D. Kim","doi":"10.1109/IPCON.2017.8116230","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116230","url":null,"abstract":"The ultrafast semimetalization by light field of various materials have been studied. Despite of their different physical properties, similar semimetallization behavior has been observed, which can be well explained by Wannier Stark localization with Zener type tunneling, taking interband and intraband transition into account.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"112 1","pages":"575-576"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80173175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Switching from magnetic to electric dipole in second harmonic generation from all-dielectric nanoantennas 全介电纳米天线二次谐波产生中磁偶极子到电偶极子的转换
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116142
M. Guasoni, L. Carletti, D. Neshev, C. de Angelis
{"title":"Switching from magnetic to electric dipole in second harmonic generation from all-dielectric nanoantennas","authors":"M. Guasoni, L. Carletti, D. Neshev, C. de Angelis","doi":"10.1109/IPCON.2017.8116142","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116142","url":null,"abstract":"We report a theoretical model for the study of second harmonic generation in cylindrical structures of finite height. By changing the structure of the pump beam we demonstrate switching from magnetic to electric dipole radiation in the generated second harmonic frequency.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"496 1","pages":"367-368"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84019392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.3μm Ill-nitride nanowire monolithic diode lasers and photonic integrated circuits on (001) silicon 1.3μm ill -氮化物纳米线单片二极管激光器和基于(001)硅的光子集成电路
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116000
P. Bhattacharya, A. Hazari
{"title":"1.3μm Ill-nitride nanowire monolithic diode lasers and photonic integrated circuits on (001) silicon","authors":"P. Bhattacharya, A. Hazari","doi":"10.1109/IPCON.2017.8116000","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116000","url":null,"abstract":"There has been a great deal of attention paid recently to GaN-based nanowires and nanowire heterostructures for their unique materials properties and the potential to realize unique and useful devices with them. They can be epitaxially grown on a variety of substrates, including the technologically important (001)Si [1]. Most importantly, the polarization field and density of extended defects in the nanowires are smaller than those in planar heterostructures. The density of surface states on the nanowire walls is also small and ∼103cm−2. The area density of the nanowire arrays can be varied in the range of 109-1011cm−2. These nanowires have therefore presented a new III-nitride based technology which allows the realization of light sources emitting in the ‘green gap’ and beyond. The active light-emitting region in the nanowires are usually InGaN disks, whose composition can be varied to tune the emission wavelength. Detailed studies have revealed that a single quantum dot is formed in the InGaN disk region [2].","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"20 1","pages":"47-48"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81237163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-injection locked quantum-dash multi-wavelength laser 自注入锁定量子冲刺多波长激光器
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116275
M. Shemis, Emad Alkhazraji, M. Khan, A. Ragheb, H. Fathallah, S. Alshebeili, M. Z. M. Khan
{"title":"Self-injection locked quantum-dash multi-wavelength laser","authors":"M. Shemis, Emad Alkhazraji, M. Khan, A. Ragheb, H. Fathallah, S. Alshebeili, M. Z. M. Khan","doi":"10.1109/IPCON.2017.8116275","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116275","url":null,"abstract":"InAs/InP quantum-dash multi-wavelength laser is reported utilizing self-injection locking coherency boosting technique. Subcarrier controllability between 1–16 Fabry-Perot modes (1600–1610nm) with ∼−3–9dBm mode power is achieved. Thereafter, a successful 64 Gbit/s DP-QPSK data transmission is demonstrated via a single self-injection locked mode over 20km single-mode-fiber.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"6 2 1","pages":"669-670"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78271101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High conversion-gain pixels in a standard CMOS image sensor process 标准CMOS图像传感器过程中的高转换增益像素
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116195
Song Chen, E. Fossum
{"title":"High conversion-gain pixels in a standard CMOS image sensor process","authors":"Song Chen, E. Fossum","doi":"10.1109/IPCON.2017.8116195","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116195","url":null,"abstract":"This paper presents a new technique to achieve high pixel conversion gain (CG) in a standard 0.18 um CMOS image sensor process. CG of 121 uV/e- and read noise of 3.2 erms are measured in the prototype sensor.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"6 1","pages":"485-486"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73314426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Aspects of type-II superlattice infrared detectors: Minority carrier lifetimes and conductivity effective masses ii型超晶格红外探测器:少数载流子寿命和电导率有效质量
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116050
D. Ting, L. Höglund, A. Soibel, A. Khoshakhlagh, S. Keo, A. Fisher, Sir Rafol, E. Luong, C. Hill, J. Mumolo, John Liu, B. Pepper, S. Gunapala
{"title":"Aspects of type-II superlattice infrared detectors: Minority carrier lifetimes and conductivity effective masses","authors":"D. Ting, L. Höglund, A. Soibel, A. Khoshakhlagh, S. Keo, A. Fisher, Sir Rafol, E. Luong, C. Hill, J. Mumolo, John Liu, B. Pepper, S. Gunapala","doi":"10.1109/IPCON.2017.8116050","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116050","url":null,"abstract":"Significant advances in type-II superlattice infrared detectors and focal plane arrays have be en achieved in the past decade. We briefly explore two challenging aspects for type-II superlattice based infrared detectors, namely, minority carrier lifetime and conductivity effective mass.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"86 1","pages":"161-162"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83988526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-optical modulation of ultrasharp lattice plasmons 超尖锐晶格等离子体的全光调制
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116264
M. Taghinejad, W. Cai
{"title":"All-optical modulation of ultrasharp lattice plasmons","authors":"M. Taghinejad, W. Cai","doi":"10.1109/IPCON.2017.8116264","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116264","url":null,"abstract":"A sub-picosecond all-optical plasmonic modulator is demonstrated by leveraging ultrafast injection dynamics of hot-electrons at the interface of gold/ITO, incorporated into a metamaterial absorber. Accurate control over modulation depth and modulation wavelength is achievable in the proposed design.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"2014 1","pages":"647-648"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82611226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transceivers for inter-data center connections 用于数据中心间连接的收发器
2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116204
A. Dochhan, Nicklas Eiselt, H. Griesser, M. Eiselt, J. Elbers
{"title":"Transceivers for inter-data center connections","authors":"A. Dochhan, Nicklas Eiselt, H. Griesser, M. Eiselt, J. Elbers","doi":"10.1109/IPCON.2017.8116204","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116204","url":null,"abstract":"We discuss options for data-center interconnects with reaches up to 80 km. Besides coherent transmission, direct detect solutions like the presented quantum-dot laser and silicon ring modulator based 56.25-Gb/s DWDM PAM4 TOSA are viable options.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"52 1","pages":"513-514"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86752766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信