宽带隙材料的千赫兹光驱

H. Mashiko, K. Oguri, Yuta Chisuga, Hiroyuki Masuda, Tomohiko Yamaguchi, A. Suda, I. Katayama, J. Takeda, H. Gotoh
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引用次数: 0

摘要

利用氮化镓(GaN)宽禁带半导体研究了1.16-PHz频率的千赫兹电子振荡。具有相干宽带谱的孤立阿秒脉冲揭示了氮化镓电子空穴系统中具有860-as周期的偶极振荡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Petahertz optical drive with wide-bandgap materials
We studied petahertz electronic oscillations with 1.16-PHz frequency using gallium nitride (GaN) wide-bandgap semiconductor. An isolated attosecond pulse with coherent broadband spectrum reveals dipole oscillation with 860-as periodicity in the GaN electron and hole system.
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