2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)最新文献_第8页

Plasma based concept for engineering of multifunctional materials with application to synthesis of large-area plasmonic substrates and to control the charge injection in dielectrics 基于等离子体的多功能材料工程概念及其应用于大面积等离子体衬底的合成和控制介电体中的电荷注入

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751389

K. Makasheva, B. Despax, C. Laurent, L. Millière, C. Villeneuve-Faure, C. Bonafos, A. Pugliara, R. Carles, L. Boudou, G. Teyssèdre

引用次数: 0

Computational study on low friction mechanism of diamond-like carbon induced by oxidation reaction 氧化反应诱导类金刚石碳低摩擦机理的计算研究

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751361

S. Bai, Jingxiang Xu, Y. Higuchi, N. Ozawa, K. Adachi, S. Mori, K. Kurihara, M. Kubo

引用次数: 0

Investigation of microwave assisted annealing on AP-PECVD fabricated In-Ga-Zn-O thin film transistors under positive bias temperature stress 正偏置温度应力下AP-PECVD In-Ga-Zn-O薄膜晶体管的微波辅助退火研究

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751474

Chien-Hung Wu, Bo-Wen Huang, Kow-Ming Chang, C. Cheng, Hsin-Ying Chen, Yao-Jen Lee, Jian-Hong Lin, Jui-Mei Hsu

引用次数: 0

Spin transport in two-dimensional materials and van der Waals heterostructures 二维材料中的自旋输运与范德华异质结构

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751518

S. Dash

{"title":"Spin transport in two-dimensional materials and van der Waals heterostructures","authors":"S. Dash","doi":"10.1109/NANO.2016.7751518","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751518","url":null,"abstract":"Summary form only given. Two-dimensional (2D) atomic crystals are considered to be very promising for nanoelectronics and spintronics applications. It provides a large class of materials proposed to be important for long distance spin transport, spin polarized tunneling and large spin-orbit coupling. Here I will discuss spintronic aspects of these 2D materials and their heterostructures. Graphene is considered to be an ideal material for spin transport due to the high mobility and long spin lifetime of the carriers. Recently, we demonstrated spin transport over distances of 16 μm and spin lifetimes up to 1.2 ns in large area CVD graphene on SiO2/Si substrate at room temperature [1]. Subsequently, using insulating h-BN as a tunnel barrier on graphene, we observe an enhancement in spin polarized tunneling [2], and its negative sign for thicker h-BN layers [3]. These signatures provide an experimental evidence of the spin filtering across the ferromagnet/hBN-graphene van der Waals heterostructures. We also employed 2D materials such as h-BN and MoS2 in ferromagnetic tunnel junctions for observation of tunnel magnetoresistance up to room temperature [4]. We further aim to address the issue of spin manipulation in graphene by employing heterostructures with other 2D semiconductors [5], topological insulators [6] and materials with novel spin textures. I will present both electronic and spintronic properties of these 2D materials and their heterostructures. These findings open a platform for exploring novel spin functionalities in 2D crystals and understanding the basic phenomenon that control their behavior.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"25 1","pages":"986-986"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87005039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of process parameters for inkjet printing of CNT random networks on flexible substrates 柔性基板上碳纳米管随机网络喷墨打印工艺参数优化

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751520

A. Falco, J. F. Salmerón, F. Loghin, A. Abdelhalim, Paolo Lugli, A. Rivadeneyra

引用次数: 2

Mass measurement of single nanoparticle by trapping in water droplet 通过捕获水滴来测量单个纳米颗粒的质量

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751446

K. Goto, K. Moritani, N. Inui

引用次数: 0

InGaAs/GaAsP quantum wells and wires for high-efficiency photovoltaic applications 用于高效光伏应用的InGaAs/GaAsP量子阱和线

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751576

M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, Kentaroh Watanabe, Y. Nakano

引用次数: 0

Hydrogen exposure effects on anodically etched GaAs nanowires in liquid electrolyte 液体电解质中阳极蚀刻砷化镓纳米线的氢暴露效应

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751375

S. Aikawa, Kohei Yamada, H. Hashimoto, H. Asoh, S. Ono

{"title":"Hydrogen exposure effects on anodically etched GaAs nanowires in liquid electrolyte","authors":"S. Aikawa, Kohei Yamada, H. Hashimoto, H. Asoh, S. Ono","doi":"10.1109/NANO.2016.7751375","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751375","url":null,"abstract":"GaAs nanowires fabricated by an anodic etching have some advantages over conventional dry crystal growth and wet chemical dissolution techniques in terms of their formation. However, undesired electrical insulating behavior caused by deep interface states is observed. It is known that the interface states originate from the dissociated As atoms between GaAs core and Ga2O3 outer layer. Here, we investigated the effect of hydrogen exposure on anodically etched GaAs nanowires in liquid electrolyte in order to reduce the high density of interface states. As a result of different hydrogen exposure time, Raman spectra indicated that the longitudinal optical phonon intensities gradually decreased and slightly upshifted with increasing the electrolysis time. This means that the density of interface states was reduced by the hydrogen exposure. Based on the Raman analysis, we fabricated thin-film transistors (TFTs) using GaAs nanowires with 600 s of reverse electrolysis treatment. The TFT having nanowire random network channel showed good electrical properties (field-effect mobility: 2.3 cm2/Vs). This is comparable to TFTs using random network channel composed of other one dimensional materials.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"70-73"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83030215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High aspect silicon structures using metal assisted chemical etching 采用金属辅助化学蚀刻的高向硅结构

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751348

N. Toan, M. Toda, T. Ono

引用次数: 0

Protein addressing in packaged multi-channel by electro-click chemistry for calorimetry biosensor 热计生物传感器中封装多通道蛋白质寻址的电点击化学

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI: 10.1109/NANO.2016.7751536

Zhuqing Wang, Jinhua Li, M. Kimura, T. Ono

引用次数: 2