2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)最新文献

I-Vector based depression level estimation technique 基于向量的抑郁水平估计技术

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-08-23 DOI: 10.1109/RTEICT.2016.7808203

B. Rani

{"title":"I-Vector based depression level estimation technique","authors":"B. Rani","doi":"10.1109/RTEICT.2016.7808203","DOIUrl":"https://doi.org/10.1109/RTEICT.2016.7808203","url":null,"abstract":"Depression is considered as a psychosomatic state associated with the soft biometric features. People suffering from depression always behave abnormal. Depression is a clinically proven disorder that can overwhelm a person and his ability to perform even a simple task. Soft biometric provides important information about a person without being enough for their verification because they lack uniqueness. This statement comprises of features which are associated with the psychosomatic state of a person such as feelings, sentiments or brain related disorders like depression. In this paper we have estimated the depression level of each speech signal using I-Vector technique. In our proposed approach first of all we have removed silence from the speech signal then we have extracted features from audio using I-Vector after that split overlapping function is applied to evaluate overlapped audio beats. In the end we have evaluated depression using relationship matrix. We have estimated the depression level of each speaker. This technique has better performance as compared with existing techniques. The overall result has shown that the I-Vector technique has good accuracy to detect depression in audios.","PeriodicalId":6527,"journal":{"name":"2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89045006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A trust model in cloud computing based on fuzzy logic 基于模糊逻辑的云计算信任模型

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-08-22 DOI: 10.1109/RTEICT.2016.7807780

Ritu, Sushma Jain

引用次数: 16

Time dispersion parameters for single bounce 2D geometrical channel including rain fading effect 含雨衰效应的单弹跳二维几何通道时间色散参数

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-07-29 DOI: 10.1007/978-981-10-4741-1_24

Ashish Kumar, Divya Rani, B. Sujatha

引用次数: 1

Information retrieval system using UNL for multilingual question answering 基于UNL的多语种问答信息检索系统

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-06-27 DOI: 10.1109/RTEICT.2016.7807956

Kanu Goel, Parteek Bhatia

引用次数: 1

Data mining and machine learning approaches on engineering materials — A review 工程材料的数据挖掘和机器学习方法综述

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI: 10.1109/RTEICT.2016.7807785

P. J. Antony, Prajna Manujesh, N. A. Jnanesh

引用次数: 10

Design of 1-bit and 4-bit adder using reversible logic in quantum-dot cellular automata 量子点元胞自动机中使用可逆逻辑的1位和4位加法器设计

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI: 10.1109/RTEICT.2016.7807891

R. Kumawat, T. Sasamal

引用次数: 11

An HUD for connected car for maintenance and emergency intimation 用于联网汽车的HUD，用于维护和紧急提示

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI: 10.1109/RTEICT.2016.7808185

R. Prasanth, A. Deshmukh, B. Vignesh, R. Janani

引用次数: 3

Design and simulation of LV PLL with ALF D-charge pump in 90 nm CMOS technology 90nm CMOS技术下带ALF电荷泵的低压锁相环设计与仿真

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI: 10.1109/RTEICT.2016.7807987

Dhwani P. Sametriya, Nisarg M. Vasavada, Dipika S. Vasava

{"title":"Design and simulation of LV PLL with ALF D-charge pump in 90 nm CMOS technology","authors":"Dhwani P. Sametriya, Nisarg M. Vasavada, Dipika S. Vasava","doi":"10.1109/RTEICT.2016.7807987","DOIUrl":"https://doi.org/10.1109/RTEICT.2016.7807987","url":null,"abstract":"With the prevalence of VLSI technology and electronics devices becoming smaller, denser, smarter and long lasting, the research in the field of low voltage applicability and low power consumption is turning omnidirectional among which one direction leads towards the depth of faster and precise clock generation which is achieved on the foundation of PLL. The time has come to break one of the famous Silicon Valley golden rules which states \"Higher the clock frequency, Greater the power consumption\". Keeping the trivial relationship between power consumption and power dissipation in mind, lowering supply voltages is the most effective method to reduce power consumption. At lower supply voltage, it is challenging to optimize each block of PLL for Low Voltage operations. A Low voltage High Frequency ALF Charge Pump PLL is proposed. It employs a differential Charge pump with an active loop filter to compensate current mismatch and reduces reference spurs. A Voltage Controlled Oscillator is designed with body bias technique providing wide capture range and low power consumption. A D Flip Flop PFD is designed with TSPC dynamic logic to achieve zero or minimum dead zone and is able to detect large phase and frequency difference.","PeriodicalId":6527,"journal":{"name":"2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77608273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optimization and fabrication of amorphous silicon based TFT 非晶硅基TFT的优化与制备

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI: 10.1109/RTEICT.2016.7808189

V. Nagendra, S. R. Yedhuraj, T. Subramanyam

{"title":"Optimization and fabrication of amorphous silicon based TFT","authors":"V. Nagendra, S. R. Yedhuraj, T. Subramanyam","doi":"10.1109/RTEICT.2016.7808189","DOIUrl":"https://doi.org/10.1109/RTEICT.2016.7808189","url":null,"abstract":"Thin Film Transistors (TFTs) are gaining its popularity in all fundamental electronic devices from large diagonal flat display TVs to flexible electronic devices. In this work, the dielectric layer of the TFT, amorphous Silicon Nitride films was fabricated and optimized using Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using Silane (SiH4) and Ammonia (NH3) as the precursor gases. The optimized process parameters for this thin layer coating had a deposition rate of 63.7 nm at 250oC, 7W RF power and gas flow ratio of 1:3 (SiH4: NH3). Using electrical and optical characterization, the electrical resistance and electronic bandgap of these thin films were found to be 2.71 GΩ and 2.72eV respectively. The semiconductor active layer was chosen to be hydrogenated amorphous silicon (a-Si: H), which was coated using PECVD technique, using SiH4 and H2 as the precursor gases. The chemical composition of a-Si:H coating was confirmed using Raman Spectroscopy. The Gate, Drain and Source materials were chosen to be Aluminium, which was coated using Thermal Evaporation technique and the electrical resistance was measured to be 0.8 Ω. The final TFT constructed using these individual layers, was characterized for its IV characteristics using a semiconductor device analyzer and the values of the current obtained were in Amps. However, the obtained graphs showed a lack of saturation for increased drain voltage values. On further analysis, it was learnt that the performance of this TFT could be further improved by increasing the P-type doping of a-Si: H thin films.","PeriodicalId":6527,"journal":{"name":"2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81776529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

An IOT based smart inverter 基于物联网的智能逆变器

2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) Pub Date : 2016-05-20 DOI: 10.1109/RTEICT.2016.7808182

Aishwarya N. Kumar, Anusha Ashok Bijapur, B. Charitha, Kirthi R. Kulkarni, K. Natarajan

引用次数: 9