2010 Silicon Nanoelectronics Workshop最新文献

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Plasmonic Metamaterial-Based RF-THz Integrated Circuits 基于等离子体超材料的射频太赫兹集成电路
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/B978-0-12-813353-8.00009-9
R. Jaiswal, Nidhi Pandit, N. Pathak
{"title":"Plasmonic Metamaterial-Based RF-THz Integrated Circuits","authors":"R. Jaiswal, Nidhi Pandit, N. Pathak","doi":"10.1016/B978-0-12-813353-8.00009-9","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00009-9","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74104750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Graphene Based Optical Interconnects 基于石墨烯的光学互连
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/B978-0-12-813353-8.00007-5
Xinbo Wang, B. Sensale‐Rodriguez
{"title":"Graphene Based Optical Interconnects","authors":"Xinbo Wang, B. Sensale‐Rodriguez","doi":"10.1016/B978-0-12-813353-8.00007-5","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00007-5","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90898185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
List of Contributors 贡献者名单
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/b978-0-12-813353-8.00045-2
J. Ajayan, S. Chaudhury, Suprem R. Das, Prabhati Dubey, R. D’Esposito, S. Frégonèse, Navdeep Goyal, R. Hegde, R. Jaiswal, Saumyakanti Khatua, R. Kotnala, Yaochuan Mei, Sachin Mishra, Sparsh Mittal, D. Nirmal, Nidhi Pandit, N. Pathak, Shibnath Pathak, Bhargav Raval, B. Sensale‐Rodriguez, Vaishali Shukla, Man Singh, S. K. Sinha, K. Verma, Xinbo Wang, T. Zimmer
{"title":"List of Contributors","authors":"J. Ajayan, S. Chaudhury, Suprem R. Das, Prabhati Dubey, R. D’Esposito, S. Frégonèse, Navdeep Goyal, R. Hegde, R. Jaiswal, Saumyakanti Khatua, R. Kotnala, Yaochuan Mei, Sachin Mishra, Sparsh Mittal, D. Nirmal, Nidhi Pandit, N. Pathak, Shibnath Pathak, Bhargav Raval, B. Sensale‐Rodriguez, Vaishali Shukla, Man Singh, S. K. Sinha, K. Verma, Xinbo Wang, T. Zimmer","doi":"10.1016/b978-0-12-813353-8.00045-2","DOIUrl":"https://doi.org/10.1016/b978-0-12-813353-8.00045-2","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90098481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunnel FET
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/B978-0-12-813353-8.00002-6
P. Dubey
{"title":"Tunnel FET","authors":"P. Dubey","doi":"10.1016/B978-0-12-813353-8.00002-6","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00002-6","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74496086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors 基于InSb和InAs纳米线的纳米电子场效应晶体管研究进展
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/B978-0-12-813353-8.00005-1
Suprem R. Das
{"title":"Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors","authors":"Suprem R. Das","doi":"10.1016/B978-0-12-813353-8.00005-1","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00005-1","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83234653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Role of Nanocomposites in Future Nanoelectronic Information Storage Devices 纳米复合材料在未来纳米电子信息存储器件中的作用
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/B978-0-12-813353-8.00011-7
Vaishali Shukla, Bhargav Raval, Sachin Mishra, Man Singh
{"title":"Role of Nanocomposites in Future Nanoelectronic Information Storage Devices","authors":"Vaishali Shukla, Bhargav Raval, Sachin Mishra, Man Singh","doi":"10.1016/B978-0-12-813353-8.00011-7","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00011-7","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80195478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multi-Functionality of Spintronic Materials 自旋电子材料的多功能性
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/B978-0-12-813353-8.00004-X
K. Verma, R. Kotnala, N. Goyal
{"title":"Multi-Functionality of Spintronic Materials","authors":"K. Verma, R. Kotnala, N. Goyal","doi":"10.1016/B978-0-12-813353-8.00004-X","DOIUrl":"https://doi.org/10.1016/B978-0-12-813353-8.00004-X","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90259230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Acknowledgments 致谢
2010 Silicon Nanoelectronics Workshop Pub Date : 2019-01-01 DOI: 10.1016/b978-0-12-813353-8.00043-9
B. Kaushik
{"title":"Acknowledgments","authors":"B. Kaushik","doi":"10.1016/b978-0-12-813353-8.00043-9","DOIUrl":"https://doi.org/10.1016/b978-0-12-813353-8.00043-9","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89277699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
How to Use the Book 如何使用这本书
2010 Silicon Nanoelectronics Workshop Pub Date : 2015-01-30 DOI: 10.1515/9783035617795-002
Mervyn Hartwig
{"title":"How to Use the Book","authors":"Mervyn Hartwig","doi":"10.1515/9783035617795-002","DOIUrl":"https://doi.org/10.1515/9783035617795-002","url":null,"abstract":"","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78030009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel nitrogen-doped SiOx resistive switching memory with low switching voltages 一种新型低开关电压氮掺杂SiOx阻性开关存储器
2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562577
Dejin Gao, Lijie Zhang, Ru Huang, Runsheng Wang, Dongmei Wu, Y. Kuang, Yu Tang, Zhe Yu, Albert Z. Wang, Yangyuan Wang
{"title":"A novel nitrogen-doped SiOx resistive switching memory with low switching voltages","authors":"Dejin Gao, Lijie Zhang, Ru Huang, Runsheng Wang, Dongmei Wu, Y. Kuang, Yu Tang, Zhe Yu, Albert Z. Wang, Yangyuan Wang","doi":"10.1109/SNW.2010.5562577","DOIUrl":"https://doi.org/10.1109/SNW.2010.5562577","url":null,"abstract":"In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy-filaments.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75582416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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