A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

Abstract

In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy-filaments.