2010 35th IEEE Photovoltaic Specialists Conference最新文献_第7页

Towards silicon nanocrystals based solar cells: Morphological properties and conduction phenomena 基于硅纳米晶体的太阳能电池:形态特性和传导现象

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616019

K. Surana, H. Lepage, Daniel Bellet, G. Carval, Mathieu Baudrit, Philippe Thony, Pierre Mur

引用次数: 3

Effect of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of n-type Cz silicon substrates 热-SiO2/PECVD-SiN叠层中SiO2厚度对n型Cz硅衬底表面钝化的影响

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614072

Y. Larionova, N. Harder, R. Brendel

引用次数: 1

Concentrating photovoltaic multijunction (CPVM) module electrical layout optimisation by a new theoretical and experimental “mismatch” analysis including series resistance effects 通过新的理论和实验“失配”分析，包括串联电阻效应，优化聚光光伏多结(CPVM)模块的电气布局

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614540

A. Minuto, G. Timò, P. Groppelli, M. Sturm

{"title":"Concentrating photovoltaic multijunction (CPVM) module electrical layout optimisation by a new theoretical and experimental “mismatch” analysis including series resistance effects","authors":"A. Minuto, G. Timò, P. Groppelli, M. Sturm","doi":"10.1109/PVSC.2010.5614540","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614540","url":null,"abstract":"A new theoretical and experimental ‘current mismatch’ analysis of CPVM modules, including series resistance effects, is proposed. It allows predicting the I–V curve and the maximum power point of the module, considering its series resistance value and a given mismatch condition, for all the possible circuital module topologies having a fixed number of Multi-junction (MJ) solar cells. The optimum module circuital layout can be determined considering the mismatched cells number, the mismatch distribution in the module, the current mismatch percent value related to each cell, the module series resistance value and the resistance value of cables connecting the module to the inverter. The new theoretical approach is validated on a 144 MJ solar cells Point-Focus module, of which, in order to experimentally simulate the mismatched conditions, some cells are on purpose blinded and the module experimental I–V curve detected. The experimental curves are successfully compared with the theoretical ones predicted by the modeling application. On the base of the theoretical mismatch analysis for modules consisting of only-one string with series-connected receivers, an original algorithm is developed to identify the current receiver's mismatch starting from any experimentally detected I–V curve, also for curves presenting many current steps.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"185 1","pages":"003081-003086"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84760563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

The use of 2nd and 3rd level correlation analysis for studying degradation in polycrystalline thin-film solar cells 利用二级和三级相关分析研究多晶薄膜太阳能电池的降解

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614752

D. Albin, J. A. del Cueto, S. Demtsu, S. Bansal

引用次数: 3

Role of single walled carbon nanotubes in improving the efficiency of P3HT:PCBM solar cells - impedance spectroscopy and morphology studies 单壁碳纳米管在提高P3HT:PCBM太阳能电池效率中的作用-阻抗光谱和形态学研究

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614483

A. T. Mallajosyula, S. Sundar Kumar Iyer, B. Mazhari

{"title":"Role of single walled carbon nanotubes in improving the efficiency of P3HT:PCBM solar cells - impedance spectroscopy and morphology studies","authors":"A. T. Mallajosyula, S. Sundar Kumar Iyer, B. Mazhari","doi":"10.1109/PVSC.2010.5614483","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614483","url":null,"abstract":"Bulk heterojunction (BHJ) solar cells of P3HT:PCBM doped with SWNTs were fabricated which doubled the efficiency over the undoped devices. No surface modifications of SWNTs were done during fabrication. Absorption and photoluminescence spectra along with photocurrent and spectral response of the devices show that SWNTs do not result in any significant charge generation at the P3HT:SWNT interface indicating that possible type-II heterojunctions between s-SWNTs and P3HT were dominated by the effects due to metallic tubes. At an optimum concentration of 0.75 wt% SWNTs, a 10% improvement in effective mobility was observed. In the voltage range of solar cell operation, two orders increase in injected current density is observed which has an Ohmic behavior. From the peak voltage of the capacitance-voltage characteristics, it was inferred that SWNTs reduce the Vbi of the devices by only 60 mV. From the Cole-Cole in the diffusion transport regime, it was observed that the injected carrier life time gets lowered from 0.628 ms to 0.125 ms with SWNTs. A negative capacitance was observed in reverse bias in devices with SWNTs at low frequencies which has similar dependence on applied field as that in forward bias. This is attributed to the large reverse current injected through SWNT energy levels, making the effects of space charge, trapping, and recombination significant. The surface roughness and volume were more than doubled with SWNTs which resulted in increased cathode coverage area affecting the charge collection efficiency. Charge extraction efficiency is analyzed using the photocurrent loss normalized to the dark current where two orders of magnitude improvement is observed with SWNTs.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"63 1","pages":"000095-000101"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86706305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Optical mapping of large area thin film solar cells 大面积薄膜太阳能电池的光学成像

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616069

Z. Huang, Jie Chen, M. Sestak, D. Attygalle, L. R. Dahal, Meghan R. Mapes, D. Strickler, K. Kormanyos, C. Salupo, R. Collins

引用次数: 12

Investigation and modeling of space radiation effects in quantum dot solar cells 量子点太阳能电池空间辐射效应的研究与建模

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614621

A. Fedoseyev, M. Turowski, A. Raman, E. Taylor, S. Hubbard, S. Polly, A. Balandin

{"title":"Investigation and modeling of space radiation effects in quantum dot solar cells","authors":"A. Fedoseyev, M. Turowski, A. Raman, E. Taylor, S. Hubbard, S. Polly, A. Balandin","doi":"10.1109/PVSC.2010.5614621","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614621","url":null,"abstract":"Novel nanomaterials and devices based on them offer significant advantages over traditional technologies in terms of light-weight and efficiency for applications in satellite and space systems. Examples of such novel devices include quantum dot (QD) based solar cells and photodetectors. However, the radiation effects modeling tools are not yet available for these devices, and the response to radiation are not well understood (Figure 1). Review of numerical models and experimental investigation of radiation effects in quantum dot based solar cells are provided. Although some studies have been conducted on degradation of solar cells in high-radiation environment of space and test data on the performance of solar cells in a radiation environment are collected, the mechanisms of radiation-induced degradation of QD solar cells has yet to be established. We develop the Nanoscale Technology Computer Aided Design (NanoTCAD) simulation software for simulation of radiation effects in QD-based photovoltaic (PV), and use conducted proton irradiation experiments to develop models and perform a direct comparison of radiation hardness of quantum dot based cells and regular solar cells. These NanoTCAD tools are based on advanced drift-diffusion and quantum models for the simulation of QD based devices and materials.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"27 1","pages":"002533-002536"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83647053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Applications of imaging techniques to Si, Cu(In,Ga)Se2, and CdTe and correlation to solar cell parameters Si, Cu(In,Ga)Se2和CdTe成像技术的应用及其与太阳能电池参数的相关性

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616123

S. Johnston, I. Repins, N. Call, R. Sundaramoorthy, K. Jones, B. To

{"title":"Applications of imaging techniques to Si, Cu(In,Ga)Se2, and CdTe and correlation to solar cell parameters","authors":"S. Johnston, I. Repins, N. Call, R. Sundaramoorthy, K. Jones, B. To","doi":"10.1109/PVSC.2010.5616123","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616123","url":null,"abstract":"Characterization by imaging has been performed on various sets of Si, Cu(In,Ga)Se2 (CIGS), and CdTe solar cell samples. The imaging techniques include photoluminescence (PL) imaging, electroluminescence (EL) imaging, reverse-bias EL imaging (ReBEL), illuminated lock-in thermography (ILIT), and forward- and reverse-bias dark lock-in thermography (DLIT). PL imaging of Si has shown that the image intensity correlates to minority-carrier lifetime. PL imaging of CIGS shows brightness variations after the deposition of the CIGS that persist through the CdS deposition and subsequent processing steps to finish the devices. The PL and EL intensities on both Si and CIGS finished cells correlate to efficiency and open-circuit voltage. Also, for all materials, PL and EL imaging show dark areas due to carrier recombination induced by defects. These same areas often appear in ILIT, DLIT, and ReBEL as heated areas or breakdown sites where currents flow through weak diodes, shunts, and defects. For Si cells, we have correlated the cells' fill factors to the amount of shunting detected by DLIT. For CIGS cells, we have identified these detrimental weak diodes and shunts by imaging and show an example of a defect analyzed in more detail by scanning electron microscopy techniques using top view and cross-sectional imaging.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"001727-001732"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85366409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Localized doping using silicon ink technology for high efficiency solar cells 用硅墨水技术局部掺杂高效太阳能电池

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614442

K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis

引用次数: 11

Ultrasonic spray pyrolysis of CZTS solar cell absorber layers and characterization studies CZTS太阳能电池吸收层的超声喷雾热解及表征研究

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616709

Tejas Prabhakar, J. Nagaraju

引用次数: 17