2010 35th IEEE Photovoltaic Specialists Conference最新文献_第8页

A method for instantaneous measurement of PV V-I characteristics and its application for MPPT control PV V-I特性的瞬时测量方法及其在MPPT控制中的应用

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614505

Daohong Wang

引用次数: 20

ZnO films with very high haze ratio prepared by MOCVD technique 采用MOCVD技术制备高雾度比ZnO薄膜

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5617007

Ihsanul Afdi Yunaz, A. Hongsingthong, Liping Zhang, S. Miyajima, M. Konagai

引用次数: 2

Extracting parameters from semi-log plots of polycrystalline silicon PV modules outdoor I–V data: Double-exponential model revisited 多晶硅光伏组件户外I-V数据半对数图参数提取:双指数模型的再探讨

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616808

G. Yordanov, O. Midtgård, Tor Oskar Saetre1

引用次数: 10

mc-Si thin films by hydrogen plasma assisted vacuum evaporation 氢等离子体辅助真空蒸发制备mc-Si薄膜

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5617133

D. Miranda, T. Moura, R. J. Santana, G. R. Guimarães, Erich R. S. Karger, A. Diniz, J. Branco

引用次数: 3

Application of ZnO1−xSx as window layer in cadmium telluride solar cells ZnO1−xSx作为窗口层在碲化镉太阳能电池中的应用

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614592

J. Perrenoud, S. Buecheler, L. Kranz, C. Fella, J. Skarp, A. Tiwari

引用次数: 8

P- to n-type conversion with sodium addition in bridgman-grown CuInSe2 桥式培养CuInSe2中P-到n-型的钠转化

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614128

H. Myers, C. Champness, Y. Tan, I. Shih

引用次数: 2

PEDOT:PSS layers as replacements for the transparent conductive coatings of organic solar cells PSS层作为有机太阳能电池透明导电涂层的替代品

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5616544

S. Schwertheim, O. Grewe, I. Hamm, T. Mueller, R. Pichner, W. Fahrner

引用次数: 3

EMCORE receivers for CPV system development 用于CPV系统开发的EMCORE接收器

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5614511

J. Foresi, Lei Yang, P. Blumenfeld, J. Nagyvary, G. Flynn, D. Aiken

{"title":"EMCORE receivers for CPV system development","authors":"J. Foresi, Lei Yang, P. Blumenfeld, J. Nagyvary, G. Flynn, D. Aiken","doi":"10.1109/PVSC.2010.5614511","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614511","url":null,"abstract":"High-efficiency solar cells used in Concentrator Photovoltaic (CPV) Systems require reliable, high-performance electrical, thermal and optical interfaces. EMCORE has developed standard CPV receivers that provide these interfaces. These standard designs provide a tool for CPV system developers to validate their novel system designs without the cost and schedule impact associated with custom receiver design. Standard receivers based on EMCORE's 1cm × 1cm and 0.5cm × 0.5cm triple junction solar cells will be reviewed. The standard receivers incorporate design rules developed by EMCORE's CPV system development team and are implemented using Curamik's aluminum oxide direct-bond-copper (dbc) substrates. The designs include Curamik's dimple technology for stress relief. The dbc substrates provide the high electrical stand-off and low resistance required for CPV applications. EMCORE's designs incorporate box connectors for wire interconnection to the receivers and a bypass diode that allows for string operation during partial shadow conditions. All components are attached using a solder reflow process that provides low void content bonding and excellent thermal conductivity between the solar cell and its substrate. Data gathered during receiver assembly, including x-ray data showing void content, will be reviewed. Methods and results for thermal resistance measurements will be presented. In addition we will review features included in the dbc that allow for component placement control. Receiver performance data as measured by HIPSS (High-Intensity Pulsed Solar Simulator) at 1000X concentration will also be reviewed. EMCORE is currently providing pre-qualification samples of these receivers to CPV system developers while qualification of the receivers is completed. The qualification test plan for the receivers will be reviewed and preliminary data from the qualification tests will be presented.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"000209-000212"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76946226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Aluminum doped hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD for p-type window layer of silicon based thin-film solar cells VHF-PECVD沉积掺铝氢化纳米晶立方碳化硅薄膜用于硅基太阳能电池的p型窗口层

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5615844

Daisuke Hamashita, S. Miyajima, A. Yamada, M. Konagai

引用次数: 2

Orientation selected epitaxy for grain enlargement of AIC poly-Si seed layers AIC多晶硅种子层晶粒扩大的取向选择外延

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI: 10.1109/PVSC.2010.5617013

Sung-Yen Wei, Sheng-min Yu, Hung-Hsi Lin, Wei Chen, Chun-Jen Chen, Tzer-Shen Lin, C. Tsai, Fu-Rong Chen

{"title":"Orientation selected epitaxy for grain enlargement of AIC poly-Si seed layers","authors":"Sung-Yen Wei, Sheng-min Yu, Hung-Hsi Lin, Wei Chen, Chun-Jen Chen, Tzer-Shen Lin, C. Tsai, Fu-Rong Chen","doi":"10.1109/PVSC.2010.5617013","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617013","url":null,"abstract":"A novel method for producing a highly-(100) orientated, large grain of poly-Si seed layer on glass by multi-round aluminum-induced crystallization (AIC) is developed. A flat 200nm poly-Si layer was first fabricated by regular AIC process to be a based layer. The second round AIC process was carried out immediately on the based layer to epitaxially grow up to a 400nm poly-Si layer by solid phase epitaxy (SPE) mechanism. The structure of enlarged epitaxial grain was examined by transmission electron microscopy (TEM), the orientation map as well as histogram of grain size from large area were performed by electron backscatter diffraction (EBSD), and the crystallinity of multi-round AIC was verified by Raman spectrometry. The lateral growth and grain suppression can be clearly observed in cross-sectional TEM analysis. The average grain size can be determined from analysis of histogram. The speed of epitaxial growth is strongly influenced by the orientation of the growth plane. We utilize this characteristic to promote the {100} proportion and reduce others to achieve a highly oriented seed-layer for followed thickening step. The population of {100} crystallographic plane is obtained statistically from orientation map and a pole figure analysis. The mechanism of the multi-round AIC will be discussed in detail in the conference.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"001586-001588"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78148058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0