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Electrochemical deposition of high density gold nanoparticles on indium/tin oxide electrode for fabrication of superoxide anion biosensor 在氧化铟锡电极上电化学沉积高密度金纳米粒子制备超氧阴离子生物传感器
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425176
Xiuping Yu, Liping Wang, J. Di
{"title":"Electrochemical deposition of high density gold nanoparticles on indium/tin oxide electrode for fabrication of superoxide anion biosensor","authors":"Xiuping Yu, Liping Wang, J. Di","doi":"10.1109/INEC.2010.5425176","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425176","url":null,"abstract":"High density gold nanoparticles (GNPs) on indium tin oxide (ITO) film coated glass have been prepared by electrochemical deposition from KAu(CN)2 solution. In this study, suitable applied potential ranges and deposition cycles are chosen to achieve high density GNPs on ITO surface. The potential utility of the high density GNP/ITO substrate are investigated. The superoxide dismutase (SOD) was immobilized on this substrate to fabricate a superoxide anion biosensor. The biosensor exhibits a rapid and high response to superoxide anion.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"30 1","pages":"848-849"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83581733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE MOVPE生长应变GaAsN/GaAs t结量子线的光反射率研究
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424516
P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
{"title":"Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE","authors":"P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe","doi":"10.1109/INEC.2010.5424516","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424516","url":null,"abstract":"GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of T-QWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"43 1","pages":"402-403"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83591141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra compact microring with resonator cavities inside 内部有谐振腔的超紧凑微环
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424887
W. Hong, Xiaohan Sun
{"title":"Ultra compact microring with resonator cavities inside","authors":"W. Hong, Xiaohan Sun","doi":"10.1109/INEC.2010.5424887","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424887","url":null,"abstract":"A novel add-drop filter based on microring embedded with several resonator cavities is proposed, and the effects of the numbers and radius of the cavities, as well as gaps between cavities and microring, on the performance of this filter are analyzed. The simulations show the spectrum of the filter could be improved when the resonance of cavities inside the microring are excited. This filter exhibits much smaller size and better spectrum than the conventional microring filter.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"41 1","pages":"1311-1312"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85440871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Synthesis and characterization of highly ordered TiO2 nanotube arrays 高有序TiO2纳米管阵列的合成与表征
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425056
K. Sun, Mujun Chen, Bo-Yun Shiu, Yung-Fang Lu, Jen-Chieh Chung, Yu-Chang Liu, Yu-Zhen Zeng, Hong‐Wen Wang
{"title":"Synthesis and characterization of highly ordered TiO2 nanotube arrays","authors":"K. Sun, Mujun Chen, Bo-Yun Shiu, Yung-Fang Lu, Jen-Chieh Chung, Yu-Chang Liu, Yu-Zhen Zeng, Hong‐Wen Wang","doi":"10.1109/INEC.2010.5425056","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425056","url":null,"abstract":"Highly-ordered TiO2 nanotube arrays (TNA) by anodizing Ti foil were carried out using a slightly modified electrochemical process. The parameters such as anodization potentials and duration have been varied in order to fabricate the specific length and diameter of TNA. The morphologies of TNA were characterized by field emission scanning electron microscope (Hitachi S-4100 FE-SEM). The crystalline phase and structure were analyzed using X-ray diffraction (Rigaku, XRD). The processing anodic current density with time was recorded by Keithley 2400. The photocurrents induced by UV-light were characterized by CHI 611. The performance of hydrogen production from photoelectrocatalytic effect of larger diameter TNA is found to be higher than the smaller diameter TNA. Base on the microstructure and calculation, we confirmed that larger diameter TNA do exhibit higher surface area.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"3 1","pages":"1037-1038"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85842329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Replication of label-free guided mode resonance filter for protein-sensors using UV nanoimprinting process with metallic nano stamp 金属纳米印花紫外纳米印迹技术制备蛋白质传感器无标签导模共振滤波器
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424735
Sungwoo Choi, E. Cho, ByungWook Kim, Jiseok Lim, Jeongwon Han, Y. Heo, Seok-min Kim, Miroo Kim, Hyungil Jung, Shinill Kang
{"title":"Replication of label-free guided mode resonance filter for protein-sensors using UV nanoimprinting process with metallic nano stamp","authors":"Sungwoo Choi, E. Cho, ByungWook Kim, Jiseok Lim, Jeongwon Han, Y. Heo, Seok-min Kim, Miroo Kim, Hyungil Jung, Shinill Kang","doi":"10.1109/INEC.2010.5424735","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424735","url":null,"abstract":"Interest in protein sensors using guided-mode resonance (GMR) filters is rapidly growing as the demand for sensitive and reliable protein sensors increases in clinical diagnostic applications and pharmaceutical research. GMR filter-based protein sensors are capable of high sensitivity in the detection of molecular interactions, by measuring the movement of sharp reflectance peaks. We designed a GMR filter by computer simulation, and created a prototype by UV nanoimprinting, using a highly durable metallic nano stamp, which was fabricated by electroforming process with a polymeric master pattern. We also demonstrated the use of this GMR filter as a protein sensor by measuring the peak wavelength value (PWV) and the PWV shift.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"104 1","pages":"344-345"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78087136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subband structure and effective mass of strained SiGe (110) inversion layer for PMOSFET PMOSFET应变SiGe(110)反转层的子带结构和有效质量
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424761
Wei-Chin Wang, Shu-Tong Chang, B. Hsieh
{"title":"Subband structure and effective mass of strained SiGe (110) inversion layer for PMOSFET","authors":"Wei-Chin Wang, Shu-Tong Chang, B. Hsieh","doi":"10.1109/INEC.2010.5424761","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424761","url":null,"abstract":"Subband structure and effective mass of strained SiGe (110) inversion layer in PMOSFET are studied theoretically in this study. The strain conditions considered include the intrinsic stress resulting from growing the various composition of SiGe alloy layers on the (110) Si substrate. The quantum confinement effect resulting from the surface induced electric field in the interface is incorporated in the k.p calculation. The change of constant energy surface due to strain effects are calculated for subband structure. The density of states effective mass, mC, the conductivity mass, mσ, and the quantization effective mass(mz) of the channel in the [110] direction of strained SiGe (110) inversion layer for PMOS under substrate strain and various surface induced electric field strengths are all investigated.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"295 1","pages":"598-599"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73320516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Preparation of carbon nanofibers using ferric nitrate from the V-type pyrolysis flame v型热解火焰制备硝酸铁纳米碳纤维
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424811
Yuanchao Liu, B. Sun, Zhao Ding, Wei Li
{"title":"Preparation of carbon nanofibers using ferric nitrate from the V-type pyrolysis flame","authors":"Yuanchao Liu, B. Sun, Zhao Ding, Wei Li","doi":"10.1109/INEC.2010.5424811","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424811","url":null,"abstract":"Synthesis carbon nanofibers from V-type pyrolysis flame is a novel technique. It need only simple experimental conditions and equipments. The V-type pyrolysis flame experimental apparatus is introduced. Carbon nanofibers were characterized by scanning electron microscope and transmission electron microscope. Carbon monoxide is as carbon source and the acetylene/air premixed gas provides heat by combustion. Hydrogen/helium premixed gas acts as diluted and protection gas. Ferric nitrate was served as catalyst precursor. Experimental results indicated that carbon nanofibers can be captured when ferric nitrate was served as catalyst precursor and sampling time was 7 minutes. The appropriate diameter of catalyst particles is from 20 to 50 nm. There will be much impurity and worse morphology carbon nanofibers if the diameter of catalyst particle is above 50nm.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"6 1","pages":"462-463"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80346544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and high lithium electroactivity of rutile TiO2@C nanorods 金红石TiO2@C纳米棒的合成及高锂电活性研究
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425048
Yongcai Qiu, Wei Chen, Shihe Yang
{"title":"Synthesis and high lithium electroactivity of rutile TiO2@C nanorods","authors":"Yongcai Qiu, Wei Chen, Shihe Yang","doi":"10.1109/INEC.2010.5425048","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425048","url":null,"abstract":"Rutile TiO<inf>2</inf> nanorods were synthesized by surfactant assisted thermal hydrolysis of TiCl<inf>4</inf> in an acidic solution. A uniform thin layer of carbon coating on the TiO<inf>2</inf> nanorods was formed by in-situ reduction of carbon precursor molecules. The resulting TiO<inf>2</inf>@C nanorods were subjected to electrochemical measurements for testing their lithium electroactivity. The TiO<inf>2</inf>@C nanorods show a reversible capacity of ∼220 mA h g<sup>−1</sup> at C/5 and ∼185 mA h g<sup>−1</sup> at 1C, which are much better than those with bare TiO<inf>2</inf> nanorods and commercial P25 nanoparticles measured under the same conditions. The significantly enhanced reversible capacity and rate capability evinces the dramatic increase of the average electron conductivity and structural stability of the anode composite material due to the thin carbon coating layer.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"14 1","pages":"1042-1043"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76700944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical and electrical properties of silicon nanoparticles 硅纳米颗粒的光学和电学性质
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424734
Anoop K. Gupta, Sonja Hartner, H. Wiggers
{"title":"Optical and electrical properties of silicon nanoparticles","authors":"Anoop K. Gupta, Sonja Hartner, H. Wiggers","doi":"10.1109/INEC.2010.5424734","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424734","url":null,"abstract":"For the fabrication of optoelectronic devices based on silicon nanoparticles (Si-NPs), it is very important to understand their optical and electrical behavior. In this paper, we present the optical and electrical properties of Si-NPs. We demonstrate that the optical properties of Si-NPs depend on their size as well as their surface chemistry. The size of Si-NPs was finely tuned by etching them in a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) for different times. The resulting Si- NPs exhibit bright luminescence across the visible spectrum. In order to stabilize the optical emission, the surface of freshly etched Si-NPs was successfully functionalized with organic molecules.As the surface chemistry is also expected to strongly influence the electrical transport between Si-NPs and therefore the electrical properties of Si-NP ensembles, the conductivity of pellets consisting of Si-NPs was measured using impedance spectroscopy. The surface oxide of Si-NPs was removed by etching them with HF acid. The freshly etched Si-NPs showed much higher conductivity compared to as-prepared samples. The surface functionalization of freshly etched Si-NPs slightly decreases their conductivity. However, it was observed that the conductivity was still much higher compared to as-prepared samples.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"25 1","pages":"616-617"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78828298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Charge transport model of gate solution AlGaN/GaN high electron mobility transistors 栅极溶液AlGaN/GaN高电子迁移率晶体管的电荷输运模型
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424659
A. Asgari, L. R. Bonab
{"title":"Charge transport model of gate solution AlGaN/GaN high electron mobility transistors","authors":"A. Asgari, L. R. Bonab","doi":"10.1109/INEC.2010.5424659","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424659","url":null,"abstract":"In this article, a transport model of gate solution AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the sensitivity of the drain current as well as small-signal parameters such as drain conductance, device transconductance and cutoff frequency to PH values of the electrolyte and to charged adsorbents at the semiconductor-electrolyte interface. This model built up with incorporation of fully and partially occupied sub-bands in the interface quantum well, combined with a numerically self-consistent solution of the Schrödinger and Poisson equations. In addition, the polarization effects, and self-heating are also taken into account.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"51 1","pages":"664-665"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78889721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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