Charge transport model of gate solution AlGaN/GaN high electron mobility transistors

In this article, a transport model of gate solution AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the sensitivity of the drain current as well as small-signal parameters such as drain conductance, device transconductance and cutoff frequency to PH values of the electrolyte and to charged adsorbents at the semiconductor-electrolyte interface. This model built up with incorporation of fully and partially occupied sub-bands in the interface quantum well, combined with a numerically self-consistent solution of the Schrödinger and Poisson equations. In addition, the polarization effects, and self-heating are also taken into account.