2012 38th IEEE Photovoltaic Specialists Conference最新文献_第5页

Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells 太阳电池磁控溅射前驱体硒化法制备Cu2ZnSnSe4薄膜

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318148

S. Kuo, Jui‐Fu Yang, F. Lai, Chun-Jung Lin

引用次数: 0

Online tuned neural networks for PV plant production forecasting 用于光伏电站产量预测的在线调谐神经网络

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318197

L. Ciabattoni, M. Grisostomi, G. Ippoliti, S. Longhi, E. Mainardi

引用次数: 20

Change in I–V characteristics of subcells in a multi-junction solar cell due to radiation irradiation 辐射辐照对多结太阳能电池中亚电池I-V特性的影响

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318183

T. Nakamura, M. Imaizumi, S. Sato, T. Ohshima

引用次数: 15

In(O,OH)S/AgInS2 absorbent layer/buffer layer system for thin film solar cells 薄膜太阳能电池用In(O,OH)S/AgInS2吸收层/缓冲层体系

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317986

C. Arredondo, W. Vallejo, J. Hernández, G. Gordillo

引用次数: 2

The effect of rear surface passivation layer thickness on high efficiency solar cells with planar and scattering metal reflectors 后表面钝化层厚度对具有平面和散射金属反射器的高效太阳能电池的影响

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317810

Yang Yang, H. Mehrvarz, S. Pillai, M. Green, H. Kampwerth, A. Ho-baillie

{"title":"The effect of rear surface passivation layer thickness on high efficiency solar cells with planar and scattering metal reflectors","authors":"Yang Yang, H. Mehrvarz, S. Pillai, M. Green, H. Kampwerth, A. Ho-baillie","doi":"10.1109/PVSC.2012.6317810","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317810","url":null,"abstract":"Rear surface reflector of solar cell is designed to improve light collection capacity by allowing the low energy photons to go through multiple bounces inside the solar device before escaping. In this paper, we investigate the thickness effect of rear SiO2 surface passivation layer on both optical and electrical properties of front-planar high efficiency PERT (Passivated Emitter and Rear Totally-Diffused) solar cells. Two kinds of metal reflectors are fabricated: the conventional planar reflectors by evaporated Al and the novel scattering reflectors by self assembled Ag nanoparticles. We find that the thickness dependence of rear SiO2 layer (from 8 nm - 134 nm) on photocurrent shows an asymmetry for planar and scattering reflectors, moreover, the scattering reflectors perform much better than the planar reflectors under all tested SiO2 thicknesses. A maximum current enhancement (calculated from wavelength 900 nm to 1200 nm) of 12.1% is presented for planar reflector with 134 nm SiO2 film, and 18.4% for scattering reflector with the optimized 19 nm rear SiO2 film. Additionally, by adding a detached metal mirror, the maximum current enhancement from scattering reflector jumps to 27.0%. Effective optical path length Z is calculated to study the light trapping (optical properties) under various SiO2 thicknesses for both reflectors. Diffusion length L is calculated to track the electrical performance. It is shown that thicker SiO2 is of benefit for both optical and electrical properties when planar Al reflector is used. However, for scattering reflectors, thinner SiO2 is preferable for optical enhancement, but thicker SiO2 is desirable for electrical gain. 19 nm SiO2 is found to be the best choice for cells with scattering reflectors, considering both effects.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"52 1","pages":"001172-001176"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84896885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

High-irradiance high-temperature vacuum testing of the Solar Probe Plus array design 高辐照度高温真空测试太阳探测器Plus阵列设计

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318274

A. Boca, P. Blumenfeld, K. Crist, K. de Zetter, R. Mitchell, B. Richards, C. Sarver, P. Sharps, M. Stan, C. Tourino

引用次数: 4

The effect of offcut angle on electrical conductivity of wafer-bonded n-GaAs/n-GaAs structures for wafer-bonded tandem solar cells 边切角对晶圆键合n-GaAs/n-GaAs结构电导率的影响

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317767

K. Yeung, M. Goorsky

{"title":"The effect of offcut angle on electrical conductivity of wafer-bonded n-GaAs/n-GaAs structures for wafer-bonded tandem solar cells","authors":"K. Yeung, M. Goorsky","doi":"10.1109/PVSC.2012.6317767","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317767","url":null,"abstract":"The effect of offcut angle on the electrical conductivity of III-V multijunction solar devices is investigated using n-GaAs/n-GaAs direct-bonded structures. In the solar industry, misoriented substrates are commonly used in the growth of III-V epitaxial layers. In addition, wafer bonding has been proposed as a potential method of integrating lattice-mismatched materials to avoid the formation of threading dislocations. Our previously published papers showed that sulfur passivation reduces the density of surface charge states and improves the interface conductivity. However, the impact of the offcut angle on the electrical properties has not been explored. n-GaAs wafers miscut towards <;111>; A are chosen and compared to nominal on-axis (001) substrates. The surfaces are treated with either an oxide etch or additional soak in aqueous (NH4)2S. Off-axis wafers are bonded face-to-face in various orientations and then annealed at 400 °C for two hours. It is observed that the electrical conductivity improves considerably with a short rapid thermal processing at 600 °C. However, the out-of-plane relative surface misorientations between the tilted (001) planes greater than 4° exhibit increasingly non-ohmic behavior. A theoretical model that describes the electron tunneling across a grain boundary between semiconductor bicrystals is used to represent the bonded interface and estimate the barrier conduction height. Fitting the zero-bias conductance over a range of temperatures reveals a 0.4 eV increase in barrier height for 12° misoriented sulfur-passivated bonded pairs. Accordingly, the interface resistance at room temperature rises from 0.01 Ω·cm2 to 3.4 Ω·cm2. These results demonstrate that the out-of-plane relative surface misorientation is the critical parameter to be monitored in order to achieve superior electrical conductivity in direct-bonded multijunction solar applications.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"5 1","pages":"000982-000987"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76994338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A multi-step superlattice solar cell with enhanced subband absorption and open circuit voltage 具有增强子带吸收和开路电压的多级超晶格太阳能电池

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317974

Yunpeng Wang, H. Sodabanlu, Shaojun Ma, H. Fujii, K. Watanabe, M. Sugiyama, Y. Nakano

引用次数: 4

19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon 非混合升级冶金硅Cz晶圆上19%效率的异质结太阳能电池

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318266

R. Einhaus, J. Kraiem, J. Degoulange, O. Nichiporuk, M. Forster, P. Papet, Y. Andrault, D. Grosset-Bourbange, F. Cocco

{"title":"19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon","authors":"R. Einhaus, J. Kraiem, J. Degoulange, O. Nichiporuk, M. Forster, P. Papet, Y. Andrault, D. Grosset-Bourbange, F. Cocco","doi":"10.1109/PVSC.2012.6318266","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318266","url":null,"abstract":"Highly purified n-type UMG (“Upgraded Metallurgical”) Silicon is a material with a strong potential for high efficiency low cost solar cells. Compared to p-type Silicon, n-type Silicon is in general less susceptible to lifetime degradation due to residual metal impurities or to light induced degradation due to the Boron-Oxygen complex. In this work a 15kg 6 inch mono-c Cz Silicon ingot has been grown from 100% highly purified UMG Silicon obtained with the PHOTOSIL process. In this feedstock the Boron and Phosphorus concentrations measured by GDMS were found to be 0.3 ppmw and 2 ppmw, respectively. The resulting ingot is n-type, fully mono c1 rystalline and has a resistivity range from 0.2 to 1 ohm.cm. Other impurities, especially metals, were not detectable with the analysis techniques applied (GDMS, ICP-OES). The ingot was cut into 125×125 mm2 pseudo square wafers of 180 micron thickness. A first series of solar cells were processed on these wafers using an industrial hetero-junction process by Roth & Rau. The best solar cell from a batch of 14 had an energy conversion efficiency of 19.0% (compared to an average: 18.6%) under standard testing conditions with a very high Voc of 725mV.. An independent confirmation of these results is pending.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"37 1","pages":"003234-003237"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81017436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Si thin film solar cell with asymmetric p-n junction 非对称pn结硅薄膜太阳能电池

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317820

M. Ko, C. Baek, T. Rim, S. Park, Y. Jeong

引用次数: 1