非混合升级冶金硅Cz晶圆上19%效率的异质结太阳能电池

R. Einhaus, J. Kraiem, J. Degoulange, O. Nichiporuk, M. Forster, P. Papet, Y. Andrault, D. Grosset-Bourbange, F. Cocco
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引用次数: 10

摘要

高纯度n型UMG(“升级冶金”)硅是一种具有强大潜力的高效低成本太阳能电池材料。与p型硅相比,n型硅通常不太容易由于残余金属杂质或由于硼氧配合物引起的光诱导降解而发生寿命降解。在这项工作中,一个15公斤6英寸的单Cz硅锭是由100%高纯度的UMG硅通过PHOTOSIL工艺获得的。在该原料中,用GDMS测定的硼和磷浓度分别为0.3 ppmw和2 ppmw。所得钢锭为n型,完全单晶,电阻率范围为0.2至1欧姆。厘米。其他杂质,特别是金属,无法用所应用的分析技术(GDMS, ICP-OES)检测到。铸锭被切割成125×125 mm2的180微米厚度的伪方形晶片。第一批太阳能电池是由Roth & Rau使用工业异质结工艺在这些硅片上加工的。在标准测试条件下,在725mV的高Voc下,14块太阳能电池的最佳能量转换效率为19.0%(平均为18.6%)。对这些结果的独立确认正在等待中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon
Highly purified n-type UMG (“Upgraded Metallurgical”) Silicon is a material with a strong potential for high efficiency low cost solar cells. Compared to p-type Silicon, n-type Silicon is in general less susceptible to lifetime degradation due to residual metal impurities or to light induced degradation due to the Boron-Oxygen complex. In this work a 15kg 6 inch mono-c Cz Silicon ingot has been grown from 100% highly purified UMG Silicon obtained with the PHOTOSIL process. In this feedstock the Boron and Phosphorus concentrations measured by GDMS were found to be 0.3 ppmw and 2 ppmw, respectively. The resulting ingot is n-type, fully mono c1 rystalline and has a resistivity range from 0.2 to 1 ohm.cm. Other impurities, especially metals, were not detectable with the analysis techniques applied (GDMS, ICP-OES). The ingot was cut into 125×125 mm2 pseudo square wafers of 180 micron thickness. A first series of solar cells were processed on these wafers using an industrial hetero-junction process by Roth & Rau. The best solar cell from a batch of 14 had an energy conversion efficiency of 19.0% (compared to an average: 18.6%) under standard testing conditions with a very high Voc of 725mV.. An independent confirmation of these results is pending.
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