Frontiers of Physics最新文献_第5页

Quantum secure direct communication with hybrid entanglement 利用混合纠缠进行量子安全直接通信

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-04-08 DOI: 10.1007/s11467-024-1396-5

Peng Zhao, Wei Zhong, Ming-Ming Du, Xi-Yun Li, Lan Zhou, Yu-Bo Sheng

引用次数: 0

Genuine tripartite entanglement and geometric quantum discord in entangled three-body Unruh–DeWitt detector system 纠缠三体 Unruh-DeWitt 探测器系统中的真正三方纠缠和几何量子不和

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-04-08 DOI: 10.1007/s11467-024-1398-3

Tingting Fan, Cuihong Wen, Jiliang Jing, Jieci Wang

{"title":"Genuine tripartite entanglement and geometric quantum discord in entangled three-body Unruh–DeWitt detector system","authors":"Tingting Fan, Cuihong Wen, Jiliang Jing, Jieci Wang","doi":"10.1007/s11467-024-1398-3","DOIUrl":"10.1007/s11467-024-1398-3","url":null,"abstract":"<div><p>We studied the quantum correlations of a three-body Unruh–DeWitt detector system using genuine tripartite entanglement (GTE) and geometric quantum discord (GQD). We considered two representative three-body initial entangled states, namely the GHZ state and the W state. We demonstrated that the quantum correlations of the tripartite system are completely destroyed at the limit of infinite acceleration. In particular, it is found that the GQD of the two initial states exhibits “sudden change” behavior with increasing acceleration. It is shown that the quantum correlations of the W state are more sensitive than those of the GHZ state under the effect of Unruh thermal noise. The GQD is a more robust quantum resource than the GTE, and we can achieve robustness in discord-type quantum correlations by selecting the smaller energy gap in the detector. These findings provide guidance for selecting appropriate quantum states and resources for quantum information processing tasks in a relativistic setting.\u0000</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 5","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140566373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO3/SrTiO3 (110) heterostructures LaTiO3/SrTiO3 (110) 异质结构界面上的高机动性自旋极化二维电子气

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-04-08 DOI: 10.1007/s11467-024-1395-6

Zhao-Cai Wang, Zheng-Nan Li, Shuang-Shuang Li, Weiyao Zhao, Ren-Kui Zheng

{"title":"High-mobility spin-polarized two-dimensional electron gas at the interface of LaTiO3/SrTiO3 (110) heterostructures","authors":"Zhao-Cai Wang, Zheng-Nan Li, Shuang-Shuang Li, Weiyao Zhao, Ren-Kui Zheng","doi":"10.1007/s11467-024-1395-6","DOIUrl":"10.1007/s11467-024-1395-6","url":null,"abstract":"<div><p>High-quality antiferromagnetic Mott insulator thin films of LaTiO<sub>3</sub> (LTO) were epitaxially grown onto SrTiO<sub>3</sub> (STO) (110) substrates using the pulsed laser deposition. The LTO/STO heterostructures are not only highly conducting and ferromagnetic, but also show Kondo effect, Shubnikov-de Haas (SdH) oscillations with a nonzero Berry phase of <i>π</i>, and low-field hysteretic negative magnetoresistance (MR). Angle-dependent SdH oscillations and a calculation of the thickness of the interfacial conducting layer indicate the formation of a 4-nm high mobility two-dimensional electron gas (2DEG) layer at the interface. Moreover, an amazingly large low-field negative MR of ∼61.8% is observed at 1.8 K and 200 Oe, which is approximately one to two orders of magnitude larger than those observed in other spin-polarized 2DEG oxide systems. All these results demonstrate that the 2DEG is spin-polarized and the 4-nm interfacial layer is ferromagnetic, which are attributed to the presence of magnetic Ti<sup>3+</sup> ions due to interfacial oxygen vacancies and the diffusion of La<sup>3+</sup> ions into the STO substrate. The localized Ti<sup>3+</sup> magnetic moments couple to high mobility itinerant electrons under magnetic fields, giving rise to the observed low-field MR. Our work demonstrates the great potential of antiferromagnetic titanate oxide interface for designing spin-polarized 2DEG and spintronic devices.\u0000</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 5","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140566287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A spin–rotation mechanism of Einstein–de Haas effect based on a ferromagnetic disk 基于铁磁盘的爱因斯坦-德哈斯效应自旋旋转机制

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-04-08 DOI: 10.1007/s11467-023-1389-9

Xin Nie, Jun Li, Trinanjan Datta, Dao-Xin Yao

{"title":"A spin–rotation mechanism of Einstein–de Haas effect based on a ferromagnetic disk","authors":"Xin Nie, Jun Li, Trinanjan Datta, Dao-Xin Yao","doi":"10.1007/s11467-023-1389-9","DOIUrl":"10.1007/s11467-023-1389-9","url":null,"abstract":"<div><p>Spin–rotation coupling (SRC) is a fundamental interaction that connects electronic spins with the rotational motion of a medium. We elucidate the Einstein–de Haas (EdH) effect and its inverse with SRC as the microscopic mechanism using the dynamic spin–lattice equations derived by elasticity theory and Lagrangian formalism. By applying the coupling equations to an iron disk in a magnetic field, we exhibit the transfer of angular momentum and energy between spins and lattice, with or without damping. The timescale of the angular momentum transfer from spins to the entire lattice is estimated by our theory to be on the order of 0.01 ns, for the disk with a radius of 100 nm. Moreover, we discover a linear relationship between the magnetic field strength and the rotation frequency, which is also enhanced by a higher ratio of Young’s modulus to Poisson’s coefficient. In the presence of damping, we notice that the spin-lattice relaxation time is nearly inversely proportional to the magnetic field. Our explorations will contribute to a better understanding of the EdH effect and provide valuable insights for magneto-mechanical manufacturing.\u0000</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 5","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140566088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatiotemporal nonlinear dynamics in multimode fiber laser based on carbon nanotubes 基于碳纳米管的多模光纤激光器中的时空非线性动力学

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-04-08 DOI: 10.1007/s11467-024-1399-2

Jingxuan Sun, Yachen Wang, Congyu Zhang, Lijun Xu, Bo Fu

引用次数: 0

Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current 实现超高导通电流的 5 纳米以下双层 GaSe MOSFET

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-04-04 DOI: 10.1007/s11467-023-1390-3

Xueping Li, Xiaojie Tang, Zhuojun Wang, Peize Yuan, Lin Li, Chenhai Shen, Congxin Xia

{"title":"Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current","authors":"Xueping Li, Xiaojie Tang, Zhuojun Wang, Peize Yuan, Lin Li, Chenhai Shen, Congxin Xia","doi":"10.1007/s11467-023-1390-3","DOIUrl":"10.1007/s11467-023-1390-3","url":null,"abstract":"<div><p>Dielectric engineering plays a crucial role in the process of device miniaturization. Herein we investigate the electrical properties of bilayer GaSe metal-oxide-semiconductor field-effect transistors (MOSFETs), considering hetero-gate-dielectric construction, dielectric materials and GaSe stacking pattern. The results show that device performance strongly depends on the dielectric constants and locations of insulators. When high-<i>k</i> dielectric is placed close to the drain, it behaves with a larger on-state current (<i>I</i><sub>on</sub>) of 5052 µA/µm when the channel is 5 nm. Additionally, when the channel is 5 nm and insulator is HfO<sub>2</sub>, the largest <i>I</i><sub>on</sub> is 5134 µA/µm for devices with AC stacking GaSe channel. In particular, when the gate length is 2 nm, it still meets the HP requirements of ITRS 2028 for the device with AA stacking when high-<i>k</i> dielectric is used. Hence, the work provides guidance to regulate the performance of the two-dimensional nanodevices by dielectric engineering.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 5","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140566357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A universal non-Hermitian platform for bound state in the continuum enhanced wireless power transfer 连续增强型无线电力传输中约束态的通用非赫米提平台

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-03-23 DOI: 10.1007/s11467-023-1388-x

Haiyan Zhang, Zhiwei Guo, Yunhui Li, Yaping Yang, Yuguang Chen, Hong Chen

{"title":"A universal non-Hermitian platform for bound state in the continuum enhanced wireless power transfer","authors":"Haiyan Zhang, Zhiwei Guo, Yunhui Li, Yaping Yang, Yuguang Chen, Hong Chen","doi":"10.1007/s11467-023-1388-x","DOIUrl":"10.1007/s11467-023-1388-x","url":null,"abstract":"<div><p>Non-Hermitian systems with parity–time (PT)-symmetry have been extensively studied and rapidly developed in resonance wireless power transfer (WPT). The WPT system that satisfies PT-symmetry always has real eigenvalues, which promote efficient energy transfer. However, meeting the condition of PT-symmetry is one of the most puzzling issues. Stable power transfer under different transmission conditions is also a great challenge. Bound state in the continuum (BIC) supporting extreme quality-factor mode provides an opportunity for efficient WPT. Here, we propose theoretically and demonstrate experimentally that BIC widely exists in resonance-coupled systems without PT-symmetry, and it can even realize more stable and efficient power transfer than PT-symmetric systems. Importantly, BIC for efficient WPT is universal and suitable in standard second-order and even high-order WPT systems. Our results not only extend non-Hermitian physics beyond PT-symmetry, but also bridge the gap between BIC and practical application engineering, such as highperformance WPT, wireless sensing and communications.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 4","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2 单层正交CrS2的室温铁磁性和半金属性

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-03-23 DOI: 10.1007/s11467-023-1387-y

Bocheng Lei (, ), Aolin Li (, ), Wenzhe Zhou (, ), Yunpeng Wang (, ), Wei Xiong (, ), Yu Chen (, ), Fangping Ouyang (, )

{"title":"Room-temperature ferromagnetism and half-metallicity in monolayer orthorhombic CrS2","authors":"Bocheng Lei \u0000 (, ), Aolin Li \u0000 (, ), Wenzhe Zhou \u0000 (, ), Yunpeng Wang \u0000 (, ), Wei Xiong \u0000 (, ), Yu Chen \u0000 (, ), Fangping Ouyang \u0000 (, )","doi":"10.1007/s11467-023-1387-y","DOIUrl":"10.1007/s11467-023-1387-y","url":null,"abstract":"<div><p>Two-dimensional materials with high-temperature ferromagnetism and half-metallicity have the latest applications in spintronic devices. Based on first-principles calculations, we have investigated a novel two-dimensional CrS<sub>2</sub> phase with an orthorhombic lattice. Our results suggest that it is stable in dynamics, thermodynamics, and mechanics. The ground state of monolayer orthorhombic CrS<sub>2</sub> is both ferromagnetic and half-metallic, with a high Curie temperature of 895 K and a large spin-flipping gap on values of 0.804 eV. This room-temperature ferromagnetism and half-metallicity can maintain stability against a strong biaxial strain ranging from −5% to 5%. Meanwhile, increasing strain can significantly maintain the out-of-plane magnetic anisotropy. A density of states analysis, together with the orbital-resolved magnetic anisotropy energy, has revealed that the strain-enhanced MAE is highly related to the 3d-orbital splitting of Cr atoms. Our results suggest the monolayer orthorhombic CrS<sub>2</sub> is an ideal candidate for future spintronics.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 4","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors 二维层状半导体中布洛赫电子对激子几何结构的继承性

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-03-22 DOI: 10.1007/s11467-023-1386-z

Jianju Tang, Songlei Wang, Hongyi Yu

{"title":"Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors","authors":"Jianju Tang, Songlei Wang, Hongyi Yu","doi":"10.1007/s11467-023-1386-z","DOIUrl":"10.1007/s11467-023-1386-z","url":null,"abstract":"<div><p>We theoretically studied the exciton geometric structure in layered semiconducting transition metal dichalcogenides. Based on a three-orbital tight-binding model for Bloch electrons which incorporates their geometric structures, an effective exciton Hamiltonian is constructed and solved perturbatively to reveal the relation between the exciton and its electron/hole constituent. We show that the electron—hole Coulomb interaction gives rise to a non-trivial inheritance of the exciton geometric structure from Bloch electrons, which manifests as a valley-dependent center-of-mass anomalous Hall velocity of the exciton when two external fields are applied on the electron and hole constituents, respectively. The obtained center-of-mass anomalous velocity is found to exhibit a non-trivial dependence on the fields, as well as the wave function and valley index of the exciton. These findings can serve as a general guide for the field-control of the valley-dependent exciton transport, enabling the design of novel quantum optoelectronic and valleytronic devices.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 4","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulation of charge in C9N4 monolayer for a high-capacity hydrogen storage as a switchable strategy 调控 C9N4 单层中的电荷以实现高容量氢储存的可切换策略

IF 6.5 2区物理与天体物理

Frontiers of Physics Pub Date : 2024-03-06 DOI: 10.1007/s11467-023-1385-0

Lin Ju, Junxian Liu, Minghui Wang, Shenbo Yang, Shuli Liu

{"title":"Modulation of charge in C9N4 monolayer for a high-capacity hydrogen storage as a switchable strategy","authors":"Lin Ju, Junxian Liu, Minghui Wang, Shenbo Yang, Shuli Liu","doi":"10.1007/s11467-023-1385-0","DOIUrl":"10.1007/s11467-023-1385-0","url":null,"abstract":"<div><p>Developing advanced hydrogen storage materials with high capacity and efficient reversibility is a crucial aspect for utilizing hydrogen source as a promising alternate to fossil fuels. In this paper, we have systematically investigated the hydrogen storage properties of neutral and negatively charged C<sub>9</sub>N<sub>4</sub> monolayer based on density functional theory (DFT). Our foundings indicate that injecting additional electrons into the adsorbent significantly boosts the adsorption capacity of C<sub>9</sub>N<sub>4</sub> monolayer to H<sub>2</sub> molecules. The gravimetric density of negatively charged C<sub>9</sub>N<sub>4</sub> monolayer can reach up to 10.80 wt% when fully covered with hydrogen. Unlike other hydrogen storage methods, the storage and release processes happen automatically upon introducing or removing extra electrons. Moreover, these operations can be easily adjusted through activating or deactivating the charging voltage. As a result, the method is easily reversible and has tunable kinetics without requiring particular activators. Significantly, C<sub>9</sub>N<sub>4</sub> is proved to be a suitable candidate for efficient electron injection/release due to its well electrical conductivity. Our work can serve as a valuable guide in the quest for a novel category of materials for hydrogen storage with high capacity.\u0000</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 4","pages":""},"PeriodicalIF":6.5,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140046527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0