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A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications 基于 0.75V 10 纳米鳍式场效应晶体管的混合型自控预充电内容可寻址存储器，适用于低待机功耗应用
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-14 DOI: 10.1080/00207217.2024.2312558
Arulpriya Shanmugam, Kumar Ponnusamy
{"title":"A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications","authors":"Arulpriya Shanmugam, Kumar Ponnusamy","doi":"10.1080/00207217.2024.2312558","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312558","url":null,"abstract":"The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"9 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of STC-GFDM with Walsh Hadamard in generalized η−μ fading channel 广义η-μ衰减信道中使用沃尔什哈达玛的 STC-GFDM 分析
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-12 DOI: 10.1080/00207217.2024.2312566
Surbhi Kalsotra, Hem Dutt Joshi, Ashutosh Kumar Singh
{"title":"Analysis of STC-GFDM with Walsh Hadamard in generalized η−μ fading channel","authors":"Surbhi Kalsotra, Hem Dutt Joshi, Ashutosh Kumar Singh","doi":"10.1080/00207217.2024.2312566","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312566","url":null,"abstract":"This manuscript presents a comprehensive analytical framework for Walsh-Hadamard Transform (WHT) precoding in Space-Time Coded Generalized Frequency Division Multiplexing (STC-GFDM) systems. The in...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"31 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and optimization of broadband CPW rectenna for RF energy harvesting 射频能量采集用宽带 CPW 整流器天线的设计与优化
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-12 DOI: 10.1080/00207217.2024.2312570
Priya Sharma, Ashutosh Kumar Singh, B. Naresh, Ramesh Kumar Verma, Vinod Kumar Singh, Mohit Kumar Pandey
{"title":"Design and optimization of broadband CPW rectenna for RF energy harvesting","authors":"Priya Sharma, Ashutosh Kumar Singh, B. Naresh, Ramesh Kumar Verma, Vinod Kumar Singh, Mohit Kumar Pandey","doi":"10.1080/00207217.2024.2312570","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312570","url":null,"abstract":"Wireless sensor networks (WSNs) are widely used in a variety of sectors, including the surveillance, healthcare, and military, and so on. The high cost and short lifespan of wireless sensor network...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"38 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An approach for designing leakage compensated voltage reference circuit 设计漏电补偿电压基准电路的方法
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-06 DOI: 10.1080/00207217.2024.2312564
Anushree, Kanhaiya Lal Pushkar, Jasdeep Kaur
{"title":"An approach for designing leakage compensated voltage reference circuit","authors":"Anushree, Kanhaiya Lal Pushkar, Jasdeep Kaur","doi":"10.1080/00207217.2024.2312564","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312564","url":null,"abstract":"In this paper, the design of CMOS-based and recyclic folded cascode (RFC)-based voltage reference circuits is presented. Further inherent leakage compensation technique using diode connected MOSFET...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"14 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Data transmission via hybrid fuzzy time slot scheduling in long-range communication 远距离通信中通过混合模糊时隙调度进行数据传输
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312567
E. Saritha, U. Sajesh Kumar
{"title":"Data transmission via hybrid fuzzy time slot scheduling in long-range communication","authors":"E. Saritha, U. Sajesh Kumar","doi":"10.1080/00207217.2024.2312567","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312567","url":null,"abstract":"Several communication protocols have been tuned for LoRaWAN since the development of LoRa technology more than 10 years ago. LPWAN technology can address issues like overlooked delivery ratio, redu...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"14 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 28 GHz transformer-based Doherty power amplifier for FR2 5G applications in 40 nm CMOS 采用 40 纳米 CMOS、基于变压器的 28 GHz Doherty 功率放大器，适用于 FR2 5G 应用
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312557
Linhong Li, Zhaofeng Zhang
{"title":"A 28 GHz transformer-based Doherty power amplifier for FR2 5G applications in 40 nm CMOS","authors":"Linhong Li, Zhaofeng Zhang","doi":"10.1080/00207217.2024.2312557","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312557","url":null,"abstract":"In this paper, a 28 GHz transformer-based Doherty power amplifier (DPA) is designed in Huali Microelectronics (HLMC) 40 nm CMOS process. The impedance inverter is converted into transformer form to...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"17 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Super-twisting hysteresis controller for multi-rotor wind energy systems 用于多旋翼风能系统的超扭曲滞后控制器
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312086
Habib Benbouhenni, Nicu Bizon, Ilhami Colak
{"title":"Super-twisting hysteresis controller for multi-rotor wind energy systems","authors":"Habib Benbouhenni, Nicu Bizon, Ilhami Colak","doi":"10.1080/00207217.2024.2312086","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312086","url":null,"abstract":"In this study, the hysteresis controller (HCs) of the direct power control (DPC) is proposed based on super-twisting HCs (STHCs). The effectiveness of the proposed STHCs is analysed and compared wi...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"9 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET 工艺参数变化对 GC-JL-GAA MOSFET 噪声和线性性能的影响
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312560
Vidyadhar Gupta, Amit Kumar Pandey, Abhinav Gupta, Vedvrat, Tarun Kumar Gupta
{"title":"Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET","authors":"Vidyadhar Gupta, Amit Kumar Pandey, Abhinav Gupta, Vedvrat, Tarun Kumar Gupta","doi":"10.1080/00207217.2024.2312560","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312560","url":null,"abstract":"The short channel effects are improved in GC-JL-GAA MOSFETs by raising the channel’s graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit applications. Th...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"100 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High gain interleaved DC-DC converter with ripple-free input current and low device stress 无纹波输入电流和低器件应力的高增益交错直流-直流转换器
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312569
A.S. Valarmathy, Prabhakar Mahalingam
{"title":"High gain interleaved DC-DC converter with ripple-free input current and low device stress","authors":"A.S. Valarmathy, Prabhakar Mahalingam","doi":"10.1080/00207217.2024.2312569","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312569","url":null,"abstract":"A non-isolated DC-DC converter which yields high voltage gain and suitable for photovoltaic (PV) applications is described in this research article. The high gain converter proposed in this paper i...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"1 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An energy-efficient design of ternary SRAM using GNRFETs 使用 GNRFET 的三元 SRAM 节能设计
IF 1.3 4区 工程技术
International Journal of Electronics Pub Date : 2024-02-05 DOI: 10.1080/00207217.2024.2312563
Maedeh Orouji, Erfan Abbasian, Morteza Gholipour
{"title":"An energy-efficient design of ternary SRAM using GNRFETs","authors":"Maedeh Orouji, Erfan Abbasian, Morteza Gholipour","doi":"10.1080/00207217.2024.2312563","DOIUrl":"https://doi.org/10.1080/00207217.2024.2312563","url":null,"abstract":"The primary requirement of internet-of-things (IoT) applications is to have an energy-efficient design that extends the battery life for long-term operation. To achieve energy efficiency, one can e...","PeriodicalId":54961,"journal":{"name":"International Journal of Electronics","volume":"22 1","pages":""},"PeriodicalIF":1.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139756638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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