采用 40 纳米 CMOS、基于变压器的 28 GHz Doherty 功率放大器，适用于 FR2 5G 应用

IF 1.1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Electronics Pub Date : 2024-02-05 DOI:10.1080/00207217.2024.2312557

Linhong Li, Zhaofeng Zhang

引用次数: 0

摘要

本文采用华力微电子 (HLMC) 40 纳米 CMOS 工艺设计了基于变压器的 28 GHz Doherty 功率放大器 (DPA)。阻抗反相器被转换成变压器形式，以...

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A 28 GHz transformer-based Doherty power amplifier for FR2 5G applications in 40 nm CMOS

In this paper, a 28 GHz transformer-based Doherty power amplifier (DPA) is designed in Huali Microelectronics (HLMC) 40 nm CMOS process. The impedance inverter is converted into transformer form to...

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来源期刊

International Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.30

自引率

15.40%

发文量

110

审稿时长

8 months

期刊介绍： The International Journal of Electronics (IJE) supports technical applications and developing research at the cutting edge of electronics. Encompassing a broad range of electronic topics, we are a leading electronics journal dedicated to quickly sharing new concepts and developments the field of electronics.