基于 0.75V 10 纳米鳍式场效应晶体管的混合型自控预充电内容可寻址存储器，适用于低待机功耗应用

IF 1.1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Electronics Pub Date : 2024-02-14 DOI:10.1080/00207217.2024.2312558

Arulpriya Shanmugam, Kumar Ponnusamy

引用次数: 0

摘要

通过将晶体管尺寸缩小到纳米级，开关速度和驱动能力都得到了提高。使用 MOSFET 的局限性在于短沟道效应，如漏电电流...

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications

The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current...

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来源期刊

International Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.30

自引率

15.40%

发文量

110

审稿时长

8 months

期刊介绍： The International Journal of Electronics (IJE) supports technical applications and developing research at the cutting edge of electronics. Encompassing a broad range of electronic topics, we are a leading electronics journal dedicated to quickly sharing new concepts and developments the field of electronics.