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Gallium Nitride Materials and Devices XIX最新文献

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ArF excimer laser activation of Mg-doped GaN small area mesa device 掺镁氮化镓小面积介子器件的 ArF 准分子激光活化
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-13 DOI: 10.1117/12.3002082
MariaEmma Villamin, R. Roca, Itaru Kamiya, Naotaka Iwata
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引用次数: 0
Far UV light generation by AlN-based wavelength conversion devices 利用氮化铝基波长转换器件产生远紫外光
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3001482
Ryuji Katayama
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引用次数: 0
In-situ structural controls during the GaN-based VCSEL growths 氮化镓基 VCSEL 生长过程中的原位结构控制
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3000668
T. Takeuchi, S. Kamiyama, M. Iwaya
{"title":"In-situ structural controls during the GaN-based VCSEL growths","authors":"T. Takeuchi, S. Kamiyama, M. Iwaya","doi":"10.1117/12.3000668","DOIUrl":"https://doi.org/10.1117/12.3000668","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"225 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140285404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures 基于 GaN/oCVD-PEDOT 结构的三维无机/有机混合光电技术
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3000918
Tobias Voss
{"title":"Three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures","authors":"Tobias Voss","doi":"10.1117/12.3000918","DOIUrl":"https://doi.org/10.1117/12.3000918","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"10 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140396362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells 氮化镓/氮化镓量子阱非辐射点缺陷的纳米级研究
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3000482
T. Weatherley, Gunnar Kusch, Duncan T. L. Alexander, Rachel A. Oliver, J. Carlin, R. Butté, N. Grandjean
{"title":"Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells","authors":"T. Weatherley, Gunnar Kusch, Duncan T. L. Alexander, Rachel A. Oliver, J. Carlin, R. Butté, N. Grandjean","doi":"10.1117/12.3000482","DOIUrl":"https://doi.org/10.1117/12.3000482","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140396466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the plastic relaxation of strained InGaN layers towards substrates for nitride-based red light emitters 了解氮化镓应变层对氮化物红光发射器衬底的塑性松弛作用
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3001339
Joanna Moneta, G. Muziol, Marcin Krysko, Tobias Schulz, R. Kernke, Carsten Richter, Martin Albrecht, J. Smalc-Koziorowska
{"title":"Understanding the plastic relaxation of strained InGaN layers towards substrates for nitride-based red light emitters","authors":"Joanna Moneta, G. Muziol, Marcin Krysko, Tobias Schulz, R. Kernke, Carsten Richter, Martin Albrecht, J. Smalc-Koziorowska","doi":"10.1117/12.3001339","DOIUrl":"https://doi.org/10.1117/12.3001339","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140396500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE 通过微流道 MOVPE 生长的应变补偿型 InGaN 红光 LED
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3001451
Kazuhiro Ohkawa, Martin Velazquez-Rizo, M. Najmi, Daisuke Iida
{"title":"Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE","authors":"Kazuhiro Ohkawa, Martin Velazquez-Rizo, M. Najmi, Daisuke Iida","doi":"10.1117/12.3001451","DOIUrl":"https://doi.org/10.1117/12.3001451","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"2 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140396544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nano-cathodoluminescence of GaN based power-devices 基于氮化镓的功率器件的纳米阴极发光
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3000517
G. Schmidt, F. Bertram, Jürgen Christen
{"title":"Nano-cathodoluminescence of GaN based power-devices","authors":"G. Schmidt, F. Bertram, Jürgen Christen","doi":"10.1117/12.3000517","DOIUrl":"https://doi.org/10.1117/12.3000517","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"134 S231","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140285460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors 结合对氮化镓的选择性区域升华和氮化铝的再生长，实现增强型和耗尽型高电子迁移率晶体管的共同集成
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3007453
Yvon Cordier, Thi Huong Ngo, R. Comyn, S. Chenot, Julien Brault, M. Nemoz, Philippe Vennéguès, B. Damilano, É. Frayssinet, S. Vézian
{"title":"Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors","authors":"Yvon Cordier, Thi Huong Ngo, R. Comyn, S. Chenot, Julien Brault, M. Nemoz, Philippe Vennéguès, B. Damilano, É. Frayssinet, S. Vézian","doi":"10.1117/12.3007453","DOIUrl":"https://doi.org/10.1117/12.3007453","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"139 S252","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140285458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs 操作性氮化物发光二极管发光不均匀性的纳米级绘图
Gallium Nitride Materials and Devices XIX Pub Date : 2024-03-09 DOI: 10.1117/12.3012597
Camille Fornos, Natalia Alyabyeva, Mylène Sauty, W. Y. Ho, Y. Chow, T. Tak, J. S. Speck, Claude Weisbuch, Yves Lassailly, Alistair C. H. Rowe, Jacques Peretti
{"title":"Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs","authors":"Camille Fornos, Natalia Alyabyeva, Mylène Sauty, W. Y. Ho, Y. Chow, T. Tak, J. S. Speck, Claude Weisbuch, Yves Lassailly, Alistair C. H. Rowe, Jacques Peretti","doi":"10.1117/12.3012597","DOIUrl":"https://doi.org/10.1117/12.3012597","url":null,"abstract":"","PeriodicalId":517510,"journal":{"name":"Gallium Nitride Materials and Devices XIX","volume":"7 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140396643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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