Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Yvon Cordier, Thi Huong Ngo, R. Comyn, S. Chenot, Julien Brault, M. Nemoz, Philippe Vennéguès, B. Damilano, É. Frayssinet, S. Vézian
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