Yvon Cordier, Thi Huong Ngo, R. Comyn, S. Chenot, Julien Brault, M. Nemoz, Philippe Vennéguès, B. Damilano, É. Frayssinet, S. Vézian
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors