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Study of several probability distribution functions for the Klein–Kramers equation 克莱因-克拉默方程的几种概率分布函数研究
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924502129
Yaxi Li, Yue Kai
{"title":"Study of several probability distribution functions for the Klein–Kramers equation","authors":"Yaxi Li, Yue Kai","doi":"10.1142/s0217984924502129","DOIUrl":"https://doi.org/10.1142/s0217984924502129","url":null,"abstract":"In this paper, we take variable separation method to study Klein–Kramers (KK) equation. By choosing different eigenvalues and noise functions, we can get different probability density functions (PDFs) of KK equation. These PDFs contain not only normal distributions but also other distributions that correspond to anomalous diffusion phenomena. For example, power-law distribution, truncated Cauchy–Lorentz distribution, Weibull distribution, log-logistic distribution, Gamma distribution. We also show the 3D and 2D profiles of these PDFs to analyze the corresponding dynamic properties and illustrate the possible practical applications of these results. In addition, we also find some exact solutions that are not PDFs. They are also listed to ensure the completeness of the results and to illustrate the potential applications of these exact solutions.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":"62 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139849378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of several probability distribution functions for the Klein–Kramers equation 克莱因-克拉默方程的几种概率分布函数研究
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924502129
Yaxi Li, Yue Kai
{"title":"Study of several probability distribution functions for the Klein–Kramers equation","authors":"Yaxi Li, Yue Kai","doi":"10.1142/s0217984924502129","DOIUrl":"https://doi.org/10.1142/s0217984924502129","url":null,"abstract":"In this paper, we take variable separation method to study Klein–Kramers (KK) equation. By choosing different eigenvalues and noise functions, we can get different probability density functions (PDFs) of KK equation. These PDFs contain not only normal distributions but also other distributions that correspond to anomalous diffusion phenomena. For example, power-law distribution, truncated Cauchy–Lorentz distribution, Weibull distribution, log-logistic distribution, Gamma distribution. We also show the 3D and 2D profiles of these PDFs to analyze the corresponding dynamic properties and illustrate the possible practical applications of these results. In addition, we also find some exact solutions that are not PDFs. They are also listed to ensure the completeness of the results and to illustrate the potential applications of these exact solutions.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":" 39","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139789567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of β-Ga2O3 掺杂 Zr 以及间隙 H 和 O 空位对 β-Ga2O3 光电特性影响的第一性原理研究
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924501999
Ding‐Du Chen, Shu‐Min Wen, Xin‐Ya Yang, Xia Liu, Er-Jun Zhao, Chun Ying
{"title":"First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of β-Ga2O3","authors":"Ding‐Du Chen, Shu‐Min Wen, Xin‐Ya Yang, Xia Liu, Er-Jun Zhao, Chun Ying","doi":"10.1142/s0217984924501999","DOIUrl":"https://doi.org/10.1142/s0217984924501999","url":null,"abstract":"In this work, the electronic structure and optical properties of Zr-doped [Formula: see text]-Ga2O3 with interstitial H and O vacancies were studied by using first-principles generalized gradient approximation combined with the Hubbard U method based on density functional theory. The energy band structure, density of states, absorption spectrum, effective mass, mobility and conductivity of the doped system were calculated and analyzed. Results showed that the doped system was more stable under the Ga-rich condition than under the O-rich condition. With the increase in Zr doping concentration, the bandgap of the [Formula: see text]-Ga2O3 system gradually narrowed and the absorption spectrum of the system blue-shifted in the wavelength range of 162–275[Formula: see text]nm. System conductivity was enhanced by Zr doping, decreased by O vacancies and greatly improved by interstitial H. Therefore, doping Zr into the [Formula: see text]-Ga2O3 system is important for improving material properties and preparing electronic and optical devices.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":" 64","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139789135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evidence for Vogel Fulcher behavior of the 50K-relaxation in (Tm+Ta) co-doped TiO2 ceramics 掺杂(Tm+Ta)的二氧化钛陶瓷中 50K 弛豫的沃格尔-富彻尔行为证据
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924501987
Tianyu Li, W. Cao, Yingtang Zhang, Chunchang Wang
{"title":"Evidence for Vogel Fulcher behavior of the 50K-relaxation in (Tm+Ta) co-doped TiO2 ceramics","authors":"Tianyu Li, W. Cao, Yingtang Zhang, Chunchang Wang","doi":"10.1142/s0217984924501987","DOIUrl":"https://doi.org/10.1142/s0217984924501987","url":null,"abstract":"There is still no consensus about the relaxation behavior of the so-called 50[Formula: see text]K-relaxation in acceptor and donor co-doped TiO2 system. Herein, the relaxation behavior of the 50[Formula: see text]K-relaxation was investigated in (Tm[Formula: see text][Formula: see text][Formula: see text]Ta) co-doped rutile TiO2 ceramics. Dielectric properties of the sample were studied in the temperature range of 2–300[Formula: see text]K under 100 frequencies in the range of 102–106[Formula: see text]Hz. The sample shows a pronounced 50[Formula: see text]K-relaxation. Various relaxation behaviors of Arrhenius, Mott’s variable range hopping, and Vogel Fulcher laws were tried to describe the relaxation. The result indisputably evidences that the 50[Formula: see text]K-relaxation follows the Vogel Fulcher law. This work provides a heuristic hint to understand the fundamental physics underlying the colossal permittivity behavior in the acceptor and donor co-doped TiO2 ceramics system.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":"332 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139848373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evidence for Vogel Fulcher behavior of the 50K-relaxation in (Tm+Ta) co-doped TiO2 ceramics 掺杂(Tm+Ta)的二氧化钛陶瓷中 50K 弛豫的沃格尔-富彻尔行为证据
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924501987
Tianyu Li, W. Cao, Yingtang Zhang, Chunchang Wang
{"title":"Evidence for Vogel Fulcher behavior of the 50K-relaxation in (Tm+Ta) co-doped TiO2 ceramics","authors":"Tianyu Li, W. Cao, Yingtang Zhang, Chunchang Wang","doi":"10.1142/s0217984924501987","DOIUrl":"https://doi.org/10.1142/s0217984924501987","url":null,"abstract":"There is still no consensus about the relaxation behavior of the so-called 50[Formula: see text]K-relaxation in acceptor and donor co-doped TiO2 system. Herein, the relaxation behavior of the 50[Formula: see text]K-relaxation was investigated in (Tm[Formula: see text][Formula: see text][Formula: see text]Ta) co-doped rutile TiO2 ceramics. Dielectric properties of the sample were studied in the temperature range of 2–300[Formula: see text]K under 100 frequencies in the range of 102–106[Formula: see text]Hz. The sample shows a pronounced 50[Formula: see text]K-relaxation. Various relaxation behaviors of Arrhenius, Mott’s variable range hopping, and Vogel Fulcher laws were tried to describe the relaxation. The result indisputably evidences that the 50[Formula: see text]K-relaxation follows the Vogel Fulcher law. This work provides a heuristic hint to understand the fundamental physics underlying the colossal permittivity behavior in the acceptor and donor co-doped TiO2 ceramics system.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":" 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139788556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of β-Ga2O3 掺杂 Zr 以及间隙 H 和 O 空位对 β-Ga2O3 光电特性影响的第一性原理研究
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924501999
Ding‐Du Chen, Shu‐Min Wen, Xin‐Ya Yang, Xia Liu, Er-Jun Zhao, Chun Ying
{"title":"First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of β-Ga2O3","authors":"Ding‐Du Chen, Shu‐Min Wen, Xin‐Ya Yang, Xia Liu, Er-Jun Zhao, Chun Ying","doi":"10.1142/s0217984924501999","DOIUrl":"https://doi.org/10.1142/s0217984924501999","url":null,"abstract":"In this work, the electronic structure and optical properties of Zr-doped [Formula: see text]-Ga2O3 with interstitial H and O vacancies were studied by using first-principles generalized gradient approximation combined with the Hubbard U method based on density functional theory. The energy band structure, density of states, absorption spectrum, effective mass, mobility and conductivity of the doped system were calculated and analyzed. Results showed that the doped system was more stable under the Ga-rich condition than under the O-rich condition. With the increase in Zr doping concentration, the bandgap of the [Formula: see text]-Ga2O3 system gradually narrowed and the absorption spectrum of the system blue-shifted in the wavelength range of 162–275[Formula: see text]nm. System conductivity was enhanced by Zr doping, decreased by O vacancies and greatly improved by interstitial H. Therefore, doping Zr into the [Formula: see text]-Ga2O3 system is important for improving material properties and preparing electronic and optical devices.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":"155 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139849107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Results validation by using finite volume method for the blood flow with magnetohydrodynamics and hybrid nanofluids 利用有限体积法对磁流体动力学和混合纳米流体的血流进行结果验证
Modern Physics Letters B Pub Date : 2024-02-09 DOI: 10.1142/s0217984924502087
J. A. Haider, Shahbaz Ahmad, H. A. Ghazwani, Mohamed Hussien, M. Almusawa, Emad A. Az-Zo’bi
{"title":"Results validation by using finite volume method for the blood flow with magnetohydrodynamics and hybrid nanofluids","authors":"J. A. Haider, Shahbaz Ahmad, H. A. Ghazwani, Mohamed Hussien, M. Almusawa, Emad A. Az-Zo’bi","doi":"10.1142/s0217984924502087","DOIUrl":"https://doi.org/10.1142/s0217984924502087","url":null,"abstract":"This paper conducts an extensive comparative analysis of numerical methods employed in modeling blood flow through arteries with Magnetohydrodynamics (MHD) and hybrid nanofluids. The study investigates the effectiveness and precision of distinct numerical approaches: Akbari Ganji’s Method (AGM), Fourth-Order Runge–Kutta (RK4), Finite Volume Method (FVM), and the Finite Element Method (FEM). These methods are essential for comprehending the intricate fluid dynamics that arise in the presence of magnetic fields and hybrid nanofluids a phenomenon relevant in numerous medical applications. Blood flow is subjected to a homogeneous magnetic field in a radial direction while the magneto-hemodynamics effect is taken into account. A variety of medical, physiological, and surgical procedures, as well as the regulation of blood pressure, heat distribution, wound healing, diagnostic imaging, and drug discovery, depend on blood flow through arteries to carry out vital functions such as oxygen and nutrition delivery, organ maintenance, and wound healing. Our findings highlight that while each method has strengths, their applicability varies based on the problem’s characteristics and computational resource constraints. This analysis aids researchers and practitioners in selecting the most suitable method for their modeling requirements, advancing numerical techniques for complex fluid dynamics involving MHD and hybrid nanofluids.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":" 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139788525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric properties of monolayer 1T-CrS2 modified by doping non-metal atoms under strains 掺杂非金属原子修饰的单层 1T-CrS2 在应变条件下的光电特性
Modern Physics Letters B Pub Date : 2024-02-02 DOI: 10.1142/s0217984924502026
Huaidong Liu, Lu Yang, Shihang Sun, Yanshen Zhao, Xingbin Wei
{"title":"Photoelectric properties of monolayer 1T-CrS2 modified by doping non-metal atoms under strains","authors":"Huaidong Liu, Lu Yang, Shihang Sun, Yanshen Zhao, Xingbin Wei","doi":"10.1142/s0217984924502026","DOIUrl":"https://doi.org/10.1142/s0217984924502026","url":null,"abstract":"Based on the first principle, the change of photoelectric properties of non-metal-doped CrS2 under biaxial tension was studied. The formation energy indicates that the doping system is stable. Studies have shown that the partial doping system achieves a semiconductor metal phase transition. The strain opens the bandgap of the F-doped system, and the system changes from metal to n-type semiconductor. The Te-doped system realizes the transition from indirect bandgap to direct bandgap under the adjustment of 2% strain. The O and Se doping systems realize the reverse regulation of the bandgap under strain, and the conductivity gradually increases with the increase of strain. The absorption efficiency of Te doping under a certain strain is significantly enhanced, the static dielectric properties of the F doping system are increased by more than two times, the absorption spectrum response range is increased, and the absorption capacity of the system is enhanced. This lays a foundation for applying monolayer CrS2 in microelectronics and optoelectronics.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":"5 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139809188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric properties of monolayer 1T-CrS2 modified by doping non-metal atoms under strains 掺杂非金属原子修饰的单层 1T-CrS2 在应变条件下的光电特性
Modern Physics Letters B Pub Date : 2024-02-02 DOI: 10.1142/s0217984924502026
Huaidong Liu, Lu Yang, Shihang Sun, Yanshen Zhao, Xingbin Wei
{"title":"Photoelectric properties of monolayer 1T-CrS2 modified by doping non-metal atoms under strains","authors":"Huaidong Liu, Lu Yang, Shihang Sun, Yanshen Zhao, Xingbin Wei","doi":"10.1142/s0217984924502026","DOIUrl":"https://doi.org/10.1142/s0217984924502026","url":null,"abstract":"Based on the first principle, the change of photoelectric properties of non-metal-doped CrS2 under biaxial tension was studied. The formation energy indicates that the doping system is stable. Studies have shown that the partial doping system achieves a semiconductor metal phase transition. The strain opens the bandgap of the F-doped system, and the system changes from metal to n-type semiconductor. The Te-doped system realizes the transition from indirect bandgap to direct bandgap under the adjustment of 2% strain. The O and Se doping systems realize the reverse regulation of the bandgap under strain, and the conductivity gradually increases with the increase of strain. The absorption efficiency of Te doping under a certain strain is significantly enhanced, the static dielectric properties of the F doping system are increased by more than two times, the absorption spectrum response range is increased, and the absorption capacity of the system is enhanced. This lays a foundation for applying monolayer CrS2 in microelectronics and optoelectronics.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":"13 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139868997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic and optical properties of strain-regulated O-doped monolayer MoS2 应变调节 O 掺杂单层 MoS2 的电子和光学特性
Modern Physics Letters B Pub Date : 2024-02-02 DOI: 10.1142/s0217984924502002
Xuewen Gao, Ying Wang, Qing Su, Yan Su, Mengmeng Zhao, Yilin Wang, Guili Liu, Guoying Zhang
{"title":"Electronic and optical properties of strain-regulated O-doped monolayer MoS2","authors":"Xuewen Gao, Ying Wang, Qing Su, Yan Su, Mengmeng Zhao, Yilin Wang, Guili Liu, Guoying Zhang","doi":"10.1142/s0217984924502002","DOIUrl":"https://doi.org/10.1142/s0217984924502002","url":null,"abstract":"The effect of biaxial strain on O-doped monolayers MoS2 has been systematically studied by the first-principles calculations. It is shown that the strain decreases the structural stability of O-doped monolayer MoS2. Between 0% and 12% tensile strains, the bandgap steadily narrows. At different compression strains, the bandgap increases and then decreases. The optical properties analysis shows that the strain causes the peaks of both the real and imaginary parts of the dielectric function to appear in the low energy region. And it affects the absorption and reflection peaks of the doping system so that it has a strong absorption of photons in the ultraviolet region. The doping system shows resonance in the range of 0–10[Formula: see text]eV. The results of this study verify that strain can properly regulate the electronic and optical properties of O-doped monolayer MoS2, and provide a theoretical reference for the implementation of MoS2 in optoelectronic devices.","PeriodicalId":503716,"journal":{"name":"Modern Physics Letters B","volume":"300 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139810001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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