arXiv - PHYS - Mesoscale and Nanoscale Physics最新文献_第10页

Carbon nanotube as quantum point contact valley-filter and valley-splitter 作为量子点接触滤谷器和分谷器的碳纳米管

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-07 DOI: arxiv-2409.04815

Naif Hadadi, Adel Belayadi, Ousmane Ly, Adel Abbout

引用次数: 0

High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE 通过 MOVPE 技术在图案化的石墨烯上选择性生长高质量六方氮化硼

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-07 DOI: arxiv-2409.04709

Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram, Phuong Vuong, Collin Beck, Noel L. Dudeck, Amira Bencherif, Annick Loiseau, Frédéric Fossard, Jean-Sebastien Mérot, David Chapron, Thomas H. Kauffmann, Jean-Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, Abdallah Ougazzaden

{"title":"High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE","authors":"Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram, Phuong Vuong, Collin Beck, Noel L. Dudeck, Amira Bencherif, Annick Loiseau, Frédéric Fossard, Jean-Sebastien Mérot, David Chapron, Thomas H. Kauffmann, Jean-Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, Abdallah Ougazzaden","doi":"arxiv-2409.04709","DOIUrl":"https://doi.org/arxiv-2409.04709","url":null,"abstract":"Hexagonal boron nitride encapsulation is the method of choice for protecting\u0000graphene from environmental doping and impurity scattering. It was previously\u0000demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially\u0000ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to\u0000graphene non-wetting properties, h-BN growth starts preferentially from the\u0000graphene ledges. We use this fact here to selectively promote growth of\u0000high-quality flat h-BN on epigraphene by patterning epigraphene microstructures\u0000prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show smooth\u0000and pleated surface morphology on epigraphene, while crumpled BN is observed on\u0000the SiC. Cross-sectional high-resolution transmission electron microscopy\u0000images and fluorescence imaging confirm the higher BN quality grown on the\u0000epigraphene. Transport measurements reveal p-doping as expected from hydrogen\u0000intercalation of epigraphene and regions of high and low mobility. This method\u0000can be used to produce structurally uniform high-quality h-BN/epigraphene\u0000micro/nano scale heterostructure.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure 多功能范德华异质结构中的栅极可调负微分电阻

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-07 DOI: arxiv-2409.04908

Richa Mitra, Konstantina Iordanidou, Naveen Shetty, Md Anamul Hoque, Anushree Datta, Alexei Kalaboukhov, Julia Wiktor, Sergey Kubatkin, Saroj Prasad Dash, Samuel Lara-Avila

{"title":"Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure","authors":"Richa Mitra, Konstantina Iordanidou, Naveen Shetty, Md Anamul Hoque, Anushree Datta, Alexei Kalaboukhov, Julia Wiktor, Sergey Kubatkin, Saroj Prasad Dash, Samuel Lara-Avila","doi":"arxiv-2409.04908","DOIUrl":"https://doi.org/arxiv-2409.04908","url":null,"abstract":"Two-dimensional (2D) semiconductors have emerged as leading candidates for\u0000the development of low-power and multifunctional computing applications, thanks\u0000to their qualities such as layer-dependent band gap tunability, high carrier\u0000mobility, and excellent electrostatic control. Here, we explore a pair of 2D\u0000semiconductors with broken-gap (Type III) band alignment and demonstrate a\u0000highly gate-tunable p-MoTe$_{2}$/n-SnS$_{2}$ heterojunction tunnel field-effect\u0000transistor with multifunctional behavior. Employing a dual-gated asymmetric\u0000device geometry, we unveil its functionality as both a forward and backward\u0000rectifying device. Consequently, we observe a highly gate-tunable negative\u0000differential resistance (NDR), with a gate-coupling efficiency of $eta simeq\u00000.5$ and a peak-to-valley ratio of $sim$ 3 down to 150K. By employing density\u0000functional theory and exploring the density of states, we determine that\u0000interband tunneling within the valence bands is the cause of the observed NDR\u0000characteristics. The combination of band-to-band tunneling and gate\u0000controllability of NDR signal open the pathway for realizing gate-tunable 2D\u0000material-based neuromorphic and energy-efficient electronics.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bipolar Fabry-Pérot charge interferometer in periodically electron-irradiated graphene 周期性电子辐照石墨烯中的双极法布里-佩罗电荷干涉仪

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-07 DOI: arxiv-2409.04858

Nicola Melchioni, Federico Paolucci, Paolo Marconcini, Massimo Macucci, Stefano Roddaro, Alessandro Tredicucci, Federica Bianco

{"title":"Bipolar Fabry-Pérot charge interferometer in periodically electron-irradiated graphene","authors":"Nicola Melchioni, Federico Paolucci, Paolo Marconcini, Massimo Macucci, Stefano Roddaro, Alessandro Tredicucci, Federica Bianco","doi":"arxiv-2409.04858","DOIUrl":"https://doi.org/arxiv-2409.04858","url":null,"abstract":"Electron optics deals with the wave-nature of charge carriers to induce,\u0000investigate and exploit coherent phenomena in solid state devices, in analogy\u0000with optics and photonics. Typically, these goals are achieved in complex\u0000electronic devices taking advantage of the macroscopically coherent charge\u0000transport in two dimensional electron gases and superconductors. Here, we\u0000demonstrate a simple counterintuitive architecture employing\u0000intentionally-created lattice defects to induce collective coherent effects in\u0000the charge transport of graphene. More specifically, multiple Fabry-P'erot\u0000cavities are produced by irradiating graphene via low-energy electron-beam to\u0000form periodically alternated defective and pristine nano-stripes. The enhanced\u0000hole-doping in the defective stripes creates potential barriers behaving as\u0000partially reflecting mirrors and resonantly confining the carrier-waves within\u0000the pristine areas. The interference effects are both theoretically and\u0000experimentally investigated and manifest as sheet resistance oscillations up to\u000030 K for both polarities of charge carriers, contrarily to traditional\u0000electrostatically-created Fabry-P'erot interferometers. Our findings propose\u0000defective graphene as an original platform for the realization of innovative\u0000coherent electronic devices with applications in nano and quantum technologies.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Long wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayers 长波长域间声子与小角度扭曲双层膜中位错的不稳定性

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04166

V. V. Enaldiev

引用次数: 0

CMOS compatibility of semiconductor spin qubits 半导体自旋量子比特的 CMOS 兼容性

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI: arxiv-2409.03993

Nard Dumoulin Stuyck, Andre Saraiva, Will Gilbert, Jesus Cifuentes Pardo, Ruoyu Li, Christopher C. Escott, Kristiaan De Greve, Sorin Voinigescu, David J. Reilly, Andrew S. Dzurak

{"title":"CMOS compatibility of semiconductor spin qubits","authors":"Nard Dumoulin Stuyck, Andre Saraiva, Will Gilbert, Jesus Cifuentes Pardo, Ruoyu Li, Christopher C. Escott, Kristiaan De Greve, Sorin Voinigescu, David J. Reilly, Andrew S. Dzurak","doi":"arxiv-2409.03993","DOIUrl":"https://doi.org/arxiv-2409.03993","url":null,"abstract":"Several domains of society will be disrupted once millions of high-quality\u0000qubits can be brought together to perform fault-tolerant quantum computing\u0000(FTQC). All quantum computing hardware available today is many orders of\u0000magnitude removed from the requirements for FTQC. The intimidating challenges\u0000associated with integrating such complex systems have already been addressed by\u0000the semiconductor industry -hence many qubit makers have retrofitted their\u0000technology to be CMOS-compatible. This compatibility, however, can have varying\u0000degrees ranging from the mere ability to fabricate qubits using a silicon wafer\u0000as a substrate, all the way to the co-integration of qubits with high-yield,\u0000low-power advanced electronics to control these qubits. Extrapolating the\u0000evolution of quantum processors to future systems, semiconductor spin qubits\u0000have unique advantages in this respect, making them one of the most serious\u0000contenders for large-scale FTQC. In this review, we focus on the overlap\u0000between state-of-the-art semiconductor spin qubit systems and CMOS industry\u0000Very Large-Scale Integration (VLSI) principles. We identify the main\u0000differences in spin qubit operation, material, and system requirements compared\u0000to well-established CMOS industry practices. As key players in the field are\u0000looking to collaborate with CMOS industry partners, this review serves to\u0000accelerate R&D towards the industrial scale production of FTQC processors.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solving Free Fermion Problems on a Quantum Computer 在量子计算机上解决自由费米子问题

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04550

Maarten Stroeks, Daan Lenterman, Barbara Terhal, Yaroslav Herasymenko

引用次数: 0

Lattice thermal conductivity and phonon properties of polycrystalline graphene 多晶石墨烯的晶格热导率和声子特性

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04503

Kunwar Abhikeern, Amit Singh

{"title":"Lattice thermal conductivity and phonon properties of polycrystalline graphene","authors":"Kunwar Abhikeern, Amit Singh","doi":"arxiv-2409.04503","DOIUrl":"https://doi.org/arxiv-2409.04503","url":null,"abstract":"Using spectral energy density method, we predict the phonon scattering mean\u0000lifetimes of polycrystalline graphene (PC-G) having polycrystallinity only\u0000along $rm{x}$-axis with seven different misorientation (tilt) angles at room\u0000temperature. Contrary to other studies on PC-G samples, our results indicate\u0000strong dependence of the thermal conductivity (TC) on the tilt angles. We also\u0000show that the square of the group velocity components along $rm{x}$ and\u0000$rm{y}$ axes and the phonon lifetimes are uncorrelated and the phonon density\u0000of states are almost the same for all samples with different tilt angles.\u0000Further, a distribution of the group velocity component along $rm{x}$ or\u0000$rm{y}$ axis as function of normal frequency is found to be exponentially\u0000decaying whereas that of phonon lifetime showed piecewise constant function\u0000behavior with respect to frequency. We provide parameters for these\u0000distribution functions and suggest another measure of the TC based on these\u0000distributions. Finally, we perform a size-dependent analysis for two tilt\u0000angles, $21.78^circ$ and $32.20^circ$, and find that bulk TC components\u0000decrease by around 34% to 62% in comparison to the bulk TC values of the\u0000pristine graphene. Our analysis reveals intriguing insights into the interplay\u0000between grain orientation, phonon scattering and thermal conductivity in\u0000graphene.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films 超磁锰碲薄膜中的反常霍尔效应的意外调谐

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04567

Sara Bey, Shelby S. Fields, Nicholas G. Combs, Bence G. Márkus, Dávid Beke, Jiashu Wang, Anton V. Ievlev, Maksym Zhukovskyi, Tatyana Orlova, László Forró, Steven P. Bennett, Xinyu Liu, Badih A. Assaf

{"title":"Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films","authors":"Sara Bey, Shelby S. Fields, Nicholas G. Combs, Bence G. Márkus, Dávid Beke, Jiashu Wang, Anton V. Ievlev, Maksym Zhukovskyi, Tatyana Orlova, László Forró, Steven P. Bennett, Xinyu Liu, Badih A. Assaf","doi":"arxiv-2409.04567","DOIUrl":"https://doi.org/arxiv-2409.04567","url":null,"abstract":"The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic\u0000state of antiferromagnets can trigger a new era of spintronics, if materials\u0000that host a tunable and strong AHE are identified. Altermagnets are a new class\u0000of materials that can under certain conditions manifest a strong AHE, without\u0000having a net magnetization. But the ability to control their AHE is still\u0000lacking. In this study, we demonstrate that the AHE in altermagnetic\u0000{alpha}-MnTe grown on GaAs(111) substrates can be \"written on-demand\" by\u0000cooling the material under an in-plane magnetic field. The magnetic field\u0000controls the strength and the coercivity of the AHE. Remarkably, this control\u0000is unique to {alpha}-MnTe grown on GaAs and is absent in {alpha}-MnTe grown\u0000on SrF2. The tunability that we reveal challenges our current understanding of\u0000the symmetry-allowed AHE in this material and opens new possibilities for the\u0000design of altermagnetic spintronic devices.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetoacoustic waves in a highly magnetostrictive FeGa thin film 高磁致伸缩铁镓薄膜中的磁声波

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04370

Marc Rovirola, M. Waqas Khaliq, Blai Casals, Adrian Begué, Neven Biskup, Noelia Coton, Joan Manel Hernàndez, Miguel Angel Niño, Michael Foerster, Alberto Hernández-Mínguez, Rocío Ranchal, Marius V. Costache, Antoni García-Santiago, Ferran Macià

引用次数: 0