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Advances in carbon quantum dot technology for food safety: preparation, modification, applications and mechanisms 用于食品安全的碳量子点技术的进展：制备、改性、应用和机制
Nano express Pub Date : 2023-12-14 DOI: 10.1088/2632-959x/ad15a4
Qianyun Sun, JinXin Cheng, Siyu Qi, JinFeng Chen, Dingyu Hu
{"title":"Advances in carbon quantum dot technology for food safety: preparation, modification, applications and mechanisms","authors":"Qianyun Sun, JinXin Cheng, Siyu Qi, JinFeng Chen, Dingyu Hu","doi":"10.1088/2632-959x/ad15a4","DOIUrl":"https://doi.org/10.1088/2632-959x/ad15a4","url":null,"abstract":"\u0000 Functionalized carbon quantum dots (CQDs) show great potential for application in the field of food safety by combining their use with other technologies. CQDs are good candidates in this regard due to the wide range of sources of raw materials for their synthesis, and their good biocompatibility and stable fluorescence. This paper analyses the properties of CQDs and compares them with those of conventional semiconductor quantum dots. It analyses the similarities and differences between hydrothermal carbonization, pyrolysis and microwave-assisted synthesis of CQDs, and reviews the principles and methods of functionalization of CQDs through surface modification and doping. Finally, it discusses the applications of functionalized CQDs in food safety, such as detection and sensing, bio-inhibition and photocatalytic degradation, and the mechanisms of detection.","PeriodicalId":484840,"journal":{"name":"Nano express","volume":"20 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138971501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A stable undoped low-voltage memristor cell based on Titania (TiOx) 基于二氧化钛（TiOx）的稳定的未掺杂低压忆阻器电池
Nano express Pub Date : 2023-12-11 DOI: 10.1088/2632-959X/ad1413
Fateh Ullah, M. Tarkhan, Zina Fredj, Yi Su, Tianjun Wang, Mohamad Sawan
{"title":"A stable undoped low-voltage memristor cell based on Titania (TiOx)","authors":"Fateh Ullah, M. Tarkhan, Zina Fredj, Yi Su, Tianjun Wang, Mohamad Sawan","doi":"10.1088/2632-959X/ad1413","DOIUrl":"https://doi.org/10.1088/2632-959X/ad1413","url":null,"abstract":"An asymmetric memristive device fabricated with a titania (TiOx)-based switching layer deposited through atomic layer deposition with a thickness of ∼37 nm was investigated. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy coupled with energy-dispersive x-ray spectroscopy were employed for device structural characterization. A unipolar resistive switching behavior (both at positive and negative voltages) was observed through the memristor’s current–voltage characteristics. A remarkably smaller forming voltage (from the top Pt electrode to the grounded Au electrode) of 0.46 V was achieved, while it approached (positive bias from the Au electrode and holding Pt electrode as grounded) 0.25 V, which is a much smaller forming voltage than has ever been reported for titanium-based oxides without doping. The retention and endurance characterization over 2000 switching cycles were satisfactory without degradation.","PeriodicalId":484840,"journal":{"name":"Nano express","volume":"46 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138981488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insights into the interface during ice adhesion measurements 冰附着力测量过程中对界面的了解
Nano express Pub Date : 2023-12-06 DOI: 10.1088/2632-959x/ad12da
S. Apelt, U. Bergmann
{"title":"Insights into the interface during ice adhesion measurements","authors":"S. Apelt, U. Bergmann","doi":"10.1088/2632-959x/ad12da","DOIUrl":"https://doi.org/10.1088/2632-959x/ad12da","url":null,"abstract":"\u0000 Evaluating published results from ice adhesion measurements to characterise the applicability of surface coatings, usually a large variation of the published properties and a high scattering of these values attracts attention. Moreover ice adhesion is known as a highly susceptible parameter regarding temperature treatment, what additionally contributes to deviations. This paper contributes to the evaluation of ice adhesion results to correlate the measurements with the surface characteristics. It proposes a novel instrumentalised method of a quasistatic ice adhesion test to receive additional information about force and displacement behaviour of adhered ice. Their evaluation reveals insights into nanoscopic processes in the interface during the adhesion process. Different modes of the adhesion process of ice, like clean breaks, sliding with almost no force, sliding with high forces, multiple breaks or multiple sticking, not only correlated to the material, but also to methodological test parameters, are discussed. The overlapping influence of surface characteristics and test parameters is pointed out.","PeriodicalId":484840,"journal":{"name":"Nano express","volume":"46 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138595329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SWCNT-Si Photodetector with Voltage-Dependent Active Surface 具有电压相关活性表面的 SWCNT-Si 光电探测器
Nano express Pub Date : 2023-12-06 DOI: 10.1088/2632-959x/ad12d9
D. Capista, L. Lozzi, A. Di Bartolomeo, F. Giubileo, N. Martucciello, Maurizio Passacantando
{"title":"SWCNT-Si Photodetector with Voltage-Dependent Active Surface","authors":"D. Capista, L. Lozzi, A. Di Bartolomeo, F. Giubileo, N. Martucciello, Maurizio Passacantando","doi":"10.1088/2632-959x/ad12d9","DOIUrl":"https://doi.org/10.1088/2632-959x/ad12d9","url":null,"abstract":"\u0000 New works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited increase its functionalities. In this work, we report the fabrication and the characterization of a device consisting of a Single-Walled Carbon Nanotube (SWCNT) film onto an n-type silicon substrate where the nitride interlayer between the nanotubes and the silicon has been intentionally etched to obtain different thickness. Three different silicon nitride thicknesses allow the formation of three regions, inside the same device, each with different photocurrents and responsivity behaviors. We show that by selecting specific biases, the photoresponse of the regions can be switched on and off. This peculiar behavior allows the device to be used as a photodetector with a voltage dependent active surface. Scanning photo response imaging of the device surface, performed at different biases highlight this behavior.","PeriodicalId":484840,"journal":{"name":"Nano express","volume":"60 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138595557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of surfactant-assisted synthesis on the structural, optical, and dielectric characteristics of ZnO nanoparticles 表面活性剂辅助合成对氧化锌纳米粒子的结构、光学和介电特性的影响
Nano express Pub Date : 2023-12-06 DOI: 10.1088/2632-959x/ad12d8
Deepak Kumar, Rajveer Singh, Meenakshi Gautam
{"title":"Impact of surfactant-assisted synthesis on the structural, optical, and dielectric characteristics of ZnO nanoparticles","authors":"Deepak Kumar, Rajveer Singh, Meenakshi Gautam","doi":"10.1088/2632-959x/ad12d8","DOIUrl":"https://doi.org/10.1088/2632-959x/ad12d8","url":null,"abstract":"\u0000 In this study, the enhancement of ZnO's dielectric properties is pursued through the manipulation of its particle size using a surfactant-based approach. The synthesis of ZnO nanoparticles with the aid of surfactants is achieved through the sol-gel method. Through X-ray diffraction analysis, the formation of the desired Wurtzite structure is confirmed, with no secondary phases detected. The surface characteristics of the synthesized powders are examined through scanning electron microscopy (SEM) and transmission electron microscopy (TEM), both of which highlight the even distribution of the surfactant-assisted nanoparticles. The crystallite size is quantified using Scherrer's formula. UV-visible spectroscopy and photoluminescence are employed to delve into the optical properties. Dielectric behavior is assessed across a frequency range of 20 Hz to 4000 kHz at room temperature. Comparative analysis between ZnO samples grown with and without surfactants reveals that those with surfactant assistance display heightened capacitance, a notably higher dielectric constant, increased AC conductivity, and longer transit time.","PeriodicalId":484840,"journal":{"name":"Nano express","volume":"47 20","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138597787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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