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2011 IEEE Radio Frequency Integrated Circuits Symposium最新文献

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A 7dB NF 60GHz-band millimeter-wave transconductance mixer 一个7dB NF 60ghz频段毫米波跨导混频器
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940650
Yanyu Jin, J. Long, M. Spirito
{"title":"A 7dB NF 60GHz-band millimeter-wave transconductance mixer","authors":"Yanyu Jin, J. Long, M. Spirito","doi":"10.1109/RFIC.2011.5940650","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940650","url":null,"abstract":"A 60GHz-band doubly-balanced transconductance (G<inf>m</inf>) mixer with an on-chip linear L-C combiner for RF and LO signal summation and impedance transformation is described. Class-AB biasing is employed for low quiescent DC power consumption (360µW at 1.2V). At f<inf>LO</inf>=58GHz and P<inf>LO</inf>=0dBm, the G<inf>m</inf>-mixer prototype realizes 6.9dB (50Ω) NF<inf>DSB</inf>, 6.2dB power conversion gain, −4.7dBm input-referred P<inf>−1dB</inf>, and +4.2dBm IIP3.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130781327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A CMOS distributed amplifier with active input balun using GBW and linearity enhancing techniques 一种采用GBW和线性增强技术的有源输入平衡CMOS分布式放大器
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940664
A. Jahanian, P. Heydari
{"title":"A CMOS distributed amplifier with active input balun using GBW and linearity enhancing techniques","authors":"A. Jahanian, P. Heydari","doi":"10.1109/RFIC.2011.5940664","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940664","url":null,"abstract":"A CMOS highly linear 818GHz-GBW distributed amplifier (DA) with distributed active input balun is presented. Each gm cell within the DA employs dual-output 2-stage gm topology that improves gain and linearity without adversely affecting bandwidth and power. Fabricated in a 65nm LP CMOS process, the 0.9mm2 DA achieves 22dB of gain and 10dBm of P1dB while consuming 97mW from a 1.3V supply. A distributed balun using the same gm cell achieves >70GHz bandwidth and 4dB gain with 19.5mW power consumption from 1.3V supply.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121762415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Digital RF receiver front-end with wideband operation capability for m-WiMAX 具有m-WiMAX宽带操作能力的数字射频接收机前端
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940593
H. Seo, I. Choi, Changjoon Park, Jehyung Yoon, Bumman Kim
{"title":"Digital RF receiver front-end with wideband operation capability for m-WiMAX","authors":"H. Seo, I. Choi, Changjoon Park, Jehyung Yoon, Bumman Kim","doi":"10.1109/RFIC.2011.5940593","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940593","url":null,"abstract":"A Digital RF receiver front-end with wideband operation capability is presented for m-WiMAX application. By employing sampling mixer and discrete-time filter, the receiver operates in charge domain. In addition to flexibility of the discrete-time (DT) filter, the new Non-Decimation Finite Impulse Response (FIR) filter can be cascaded to a conventional FIR filter. And we can easily increase the order of the sincn-type filtering response and achieve wideband signal process capability. The designed receiver front-end is implemented by IBM 0.13-µm RF CMOS process. The chip satisfies the m-WiMAX specification with 26.63mA from a 1.5-V supply voltage for the total system.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128117005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sub-THz beam-forming using near-field coupling of Distributed Active Radiator arrays 分布式有源辐射阵列近场耦合的亚太赫兹波束形成
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940677
K. Sengupta, A. Hajimiri
{"title":"Sub-THz beam-forming using near-field coupling of Distributed Active Radiator arrays","authors":"K. Sengupta, A. Hajimiri","doi":"10.1109/RFIC.2011.5940677","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940677","url":null,"abstract":"The paper demonstrates Distributed Active Radiator (DAR) arrays as a novel way of beam-forming at sub-THz frequencies in CMOS. Near-field coupling is shown to be a scalable method for mutually locking multiple DARs to beam-form and generate high EIRP. As proofs of concept, 2×1 and 2×2 arrays of DARs, mutually synchronized through near-field coupling, are implemented in 65nm bulk CMOS. The paper also shows beam-forming near 200GHz for the 2×2 array with broadside EIRP of −1.9 dBm, total radiated power of 54 µW and beam-scanning range for approximately ± 30° in each of the two orthogonal directions in 2D space.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131773251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
A 0.7-3GHz envelope ΔΣ modulator using phase modulated carrier clock for multi-mode/band switching amplifiers 一种0.7-3GHz包络ΔΣ调制器，采用相位调制载波时钟，用于多模/频带开关放大器
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940596
S. Hori, K. Kunihiro, Kiyohiko Takahashi, M. Fukaishi
{"title":"A 0.7-3GHz envelope ΔΣ modulator using phase modulated carrier clock for multi-mode/band switching amplifiers","authors":"S. Hori, K. Kunihiro, Kiyohiko Takahashi, M. Fukaishi","doi":"10.1109/RFIC.2011.5940596","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940596","url":null,"abstract":"A 1-bit RF modulator using phase-modulated-carrier-clocking envelope ΔΣ modulation for a multi-mode/band transmitter is presented. The prototype IC designed in 90 nm CMOS process covers 2.4 GHz ISM and 3GPP frequency bands up to 3 GHz in conformity with IEEE 802.11g, W-CDMA and LTE in 5MHz-mode. The IC dissipates 8 mW for 1.95 GHz WCDMA and occupies 0.044 mm2.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134084512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
A 94GHz differential power amplifier in 45nm LP CMOS 94GHz差分功率放大器，45nm LP CMOS
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940685
N. Deferm, J. Osorio, A. de Graauw, P. Reynaert
{"title":"A 94GHz differential power amplifier in 45nm LP CMOS","authors":"N. Deferm, J. Osorio, A. de Graauw, P. Reynaert","doi":"10.1109/RFIC.2011.5940685","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940685","url":null,"abstract":"This paper presents a 94GHz 4-stage differential transformer-coupled power amplifier with capacitive neutralization. The use of transformers results in excellent common mode isolation between the different stages while providing a good impedance match. The neutralized differential pairs guarantee differential stability. The PA was designed in a 45nm LP CMOS technology. An output 1dB compression point of +4dBm and a gain of 18dB was measured. The total chip area is 0.43mm2 and the active part consumes only 0.07mm2. The 3dB bandwidth is 14GHz. Power consumption is 120mW from a 1V supply, resulting in a peak PAE of 4.6%.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124653315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A low noise amplifier simultaneously achieving input impedance and minimum noise matching 同时实现输入阻抗和最小噪声匹配的低噪声放大器
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940700
Bum-Kyum Kim, D. Im, Jaeyoung Choi, Kwyro Lee
{"title":"A low noise amplifier simultaneously achieving input impedance and minimum noise matching","authors":"Bum-Kyum Kim, D. Im, Jaeyoung Choi, Kwyro Lee","doi":"10.1109/RFIC.2011.5940700","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940700","url":null,"abstract":"A CMOS complementary capacitive loaded LNA with inductively source degeneration is implemented for 900MHz application using a 0.18-µm CMOS process. In order to achieve simultaneous input impedance and minimum noise matching, the capacitive loading technique is proposed. Owing to the capacitive loading technique, the noise figure (NF) of the proposed LNA can be perfectly close to NFmin while maintaining the source impedance matching by reducing the source degeneration inductor and gate inductor contrast to conventional cascode LNA with inductively source degeneration. The measurements demonstrate that the LNA has a power gain of 12 dB, a NF of 1 dB, an IIP3 of +7.7 dBm, and an input P1-dB of −5 dBm at 900 MHz while drawing 9 mA from a 1.8 V supply voltage.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134234376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 3.5–4.5-GHz ultra-compact 0.25mm2 reflection-type 360° phase shifter 3.5 - 4.5 ghz超紧凑0.25mm2反射型360°移相器
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940718
Wei-Tsung Li, Jeng‐Han Tsai, Min Huang, Tian-Wei Huang
{"title":"A 3.5–4.5-GHz ultra-compact 0.25mm2 reflection-type 360° phase shifter","authors":"Wei-Tsung Li, Jeng‐Han Tsai, Min Huang, Tian-Wei Huang","doi":"10.1109/RFIC.2011.5940718","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940718","url":null,"abstract":"An ultra-compact reflection-type phase shifter (RTPS) with full 360° continuous phase shift and low insertion loss using standard 0.18-µm CMOS technology is demonstrated in this paper. Dual active reflection load using active inductor is utilized in the proposed reflection-type load to cover 360 ° phase tuning through only one quadrature hybrid, which has the advantages of compact chip size, low insertion loss, and low loss variation. Measurements show better than 15 dB input/output return loss, signal losses of 6.4dB±1.5dB, less than 2.4dB±0.6 dB loss variation, and a 360 ° continuously tunable range across 3.5∼4.5 GHz with 3.4mW dc power consumption. To the best of our knowledge, the proposed phase shifter has the smallest die size, 0.25 mm2, among all reported 360° C-band CMOS RTPS, which is important for a large phase array system.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122288756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 100GHz phase-locked loop in 0.13µm SiGe BiCMOS process 基于0.13µm SiGe BiCMOS工艺的100GHz锁相环
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940606
Shinwon Kang, Jun-Chau Chien, A. Niknejad
{"title":"A 100GHz phase-locked loop in 0.13µm SiGe BiCMOS process","authors":"Shinwon Kang, Jun-Chau Chien, A. Niknejad","doi":"10.1109/RFIC.2011.5940606","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940606","url":null,"abstract":"A fully integrated 100GHz phase-locked loop (PLL) is demonstrated in 0.13µm SiGe BiCMOS process. The PLL employs a fundamental-frequency differential Colpitts voltage-controlled oscillator (VCO) with 8.3% tuning range, which achieves a phase noise of −124.5dBc/Hz at 10MHz offset, and a single-ended output power of 3dBm. The FoM of this VCO is the best among 90–100GHz VCOs. A Miller divider, operating from 50GHz up to 130GHz, is designed and the Gilbert-mixer phase detector is used to attenuate reference spurs. The total lock range of the PLL is from 92.7 to 100.2GHz, the phase noise is −102dBc/Hz at 1MHz offset, and reference spurs are not observable. The PLL dissipates 570mW and occupies 1.21mm2.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115893667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
118GHz fundamental VCO with 7.8% tuning range in 65nm CMOS 118GHz基频压控振荡器，在65nm CMOS中具有7.8%的调谐范围
2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940642
Wouter Volkaerts, M. Steyaert, P. Reynaert
{"title":"118GHz fundamental VCO with 7.8% tuning range in 65nm CMOS","authors":"Wouter Volkaerts, M. Steyaert, P. Reynaert","doi":"10.1109/RFIC.2011.5940642","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940642","url":null,"abstract":"This paper presents a 118GHz fundamental voltage controlled oscillator in a 65nm low power CMOS technology. Using accumulation mode varactors, the oscillator covers a frequency range from 113.4GHz to 122.6GHz, which corresponds to a 7.8% tuning range. This is the widest tuning range in a D-band VCO reported to date. Combined with a variable supply voltage, the tuning range is extended to 11GHz (9.3%). The VCO draws 5.6mA from a 1V supply and the output is higher than −28.5 dBm. The measured phase noise at 118.3GHz is −83.9dBc/Hz at 1MHz offset. The FOMT is −175.7dB, which is the highest reported for a D-band VCO.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123753486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
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