{"title":"一种采用GBW和线性增强技术的有源输入平衡CMOS分布式放大器","authors":"A. Jahanian, P. Heydari","doi":"10.1109/RFIC.2011.5940664","DOIUrl":null,"url":null,"abstract":"A CMOS highly linear 818GHz-GBW distributed amplifier (DA) with distributed active input balun is presented. Each gm cell within the DA employs dual-output 2-stage gm topology that improves gain and linearity without adversely affecting bandwidth and power. Fabricated in a 65nm LP CMOS process, the 0.9mm2 DA achieves 22dB of gain and 10dBm of P1dB while consuming 97mW from a 1.3V supply. A distributed balun using the same gm cell achieves >70GHz bandwidth and 4dB gain with 19.5mW power consumption from 1.3V supply.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A CMOS distributed amplifier with active input balun using GBW and linearity enhancing techniques\",\"authors\":\"A. Jahanian, P. Heydari\",\"doi\":\"10.1109/RFIC.2011.5940664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS highly linear 818GHz-GBW distributed amplifier (DA) with distributed active input balun is presented. Each gm cell within the DA employs dual-output 2-stage gm topology that improves gain and linearity without adversely affecting bandwidth and power. Fabricated in a 65nm LP CMOS process, the 0.9mm2 DA achieves 22dB of gain and 10dBm of P1dB while consuming 97mW from a 1.3V supply. A distributed balun using the same gm cell achieves >70GHz bandwidth and 4dB gain with 19.5mW power consumption from 1.3V supply.\",\"PeriodicalId\":448165,\"journal\":{\"name\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"144 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2011.5940664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A CMOS distributed amplifier with active input balun using GBW and linearity enhancing techniques
A CMOS highly linear 818GHz-GBW distributed amplifier (DA) with distributed active input balun is presented. Each gm cell within the DA employs dual-output 2-stage gm topology that improves gain and linearity without adversely affecting bandwidth and power. Fabricated in a 65nm LP CMOS process, the 0.9mm2 DA achieves 22dB of gain and 10dBm of P1dB while consuming 97mW from a 1.3V supply. A distributed balun using the same gm cell achieves >70GHz bandwidth and 4dB gain with 19.5mW power consumption from 1.3V supply.
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