IEEE Nanotechnology Magazine最新文献_第2页

How to Achieve Large-Area Ultra-Fast Operation of MoS₂ Monolayer Flash Memories? 如何实现MoS2单层快闪存储器的大面积超快速运算?

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/mnano.2023.3297118

Guilherme Migliato Marega, Zhenyu Wang, Yanfei Zhao, Hyun Goo Ji, Asmund Ottesen, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis

{"title":"How to Achieve Large-Area Ultra-Fast Operation of MoS<sub>2</sub> Monolayer Flash Memories?","authors":"Guilherme Migliato Marega, Zhenyu Wang, Yanfei Zhao, Hyun Goo Ji, Asmund Ottesen, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis","doi":"10.1109/mnano.2023.3297118","DOIUrl":"https://doi.org/10.1109/mnano.2023.3297118","url":null,"abstract":"Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector-matrix multiplications while avoiding the “von Neumann bottleneck.” Despite these promises, no single material platform meets all the requirements for the fabrication of this new processor technology. Recently, flash memories based on monolayer MoS2 have been shown to achieve ultra-fast operation, overcoming one of the main drawbacks of this memory type. Together with its other characteristics, this makes them a promising candidate for the base elements of this technology. However, the question remains of how to achieve large-area ultra-fast operation of MoS2 monolayer flash memories. In this work, we will compare large-area flash memories based on MoS2 used in past realizations of in-memory systems and analyze the improvements needed to achieve ultra-fast performance for in-memory applications.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135324013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanotechnology-Enabled Ultrasound Transducers 纳米技术支持超声换能器

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/MNANO.2023.3297117

Chang Peng, Huaiyu Wu, Xiaoning Jiang

{"title":"Nanotechnology-Enabled Ultrasound Transducers","authors":"Chang Peng, Huaiyu Wu, Xiaoning Jiang","doi":"10.1109/MNANO.2023.3297117","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3297117","url":null,"abstract":"Ultrasound transducer is a core component for transductions between acoustic energy and electrical energy in numerous applications including medical imaging, therapy, human health monitoring and non-destructive testing (NDT). The rapid advancement of nanotechnology in recent years has opened up new prospects for ultrasound transducers. The integration of nanomaterials and nanofabrication techniques with ultrasound transducers offers ample opportunities for enhancing transducer performances and opening up new applications. The objective of this review is to provide the state-of-the-art advancement of nanotechnology-enabled ultrasound transducers, with a focus on nanomaterials applied in both piezoelectric transducers and optoacoustic transducers, as well as fabrication techniques of nanostructured materials for ultrasound transducers. Firstly, nanomaterials and nanofabrication techniques for both piezoelectric transducers and optoacoustic transducers are reviewed and summarized. Representative nanotechnology-enabled ultrasound transducers for biomedical and NDT applications are then examined. Finally, a discussion of major challenges and future research directions of nanotechnology-enabled ultrasound transducers are presented.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"4-12"},"PeriodicalIF":1.6,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47161604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated Nanoplasmonic Biosensors Recent Progress for Critical Care Medicine Applications 集成纳米等离子体生物传感器在重症医学中的应用进展

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/MNANO.2023.3297104

K. Kurabayashi, Younggeun Park

{"title":"Integrated Nanoplasmonic Biosensors Recent Progress for Critical Care Medicine Applications","authors":"K. Kurabayashi, Younggeun Park","doi":"10.1109/MNANO.2023.3297104","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3297104","url":null,"abstract":"Nanoplasmonic biosensors are highly advantageous for their label-free, robust, rapid, cost-effective, and easy-to-integrate features, making them capable of real-time detection of surface-bound analyte biomolecules. This is accomplished through a shift in photon absorbing and scattering behaviors of localized surface plasmons, which are collective oscillations of conduction-band electrons highly localized on the surfaces of metallic nanostructures. These properties make nanoplasmonic biosensors promising candidates for point-of-care testing (POCT) of diseases. However, these sensors often fall short of simultaneously achieving the speed, sensitivity, and system miniaturization required for critical care medicine. In the intensive care unit (ICU), clinicians need to quickly diagnose and intervene in life-threatening illnesses. To address this issue, the authors of this “perspective” paper presents recent advancements in their integrated nanoplasmonic biosensor technologies. Their research shows that assays integrating nanoplasmonic materials with two-dimensional (2D) nanoscale multilayer transition metal dichalcogenide (TMDC) photoconductive channels offer promising POC platforms with rapid, sensitive, selective, user-friendly on-chip biosensing capabilities.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"13-23"},"PeriodicalIF":1.6,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43414114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

We Want to Hear from You! 我们想听到你的声音!

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/mnano.2023.3318809

引用次数: 0

Atomistic Simulation of Nanoscale Devices 纳米级器件的原子模拟

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-08-01 DOI: 10.1109/MNANO.2023.3278968

Youseung Lee, Jiang Cao, M. Luisier

{"title":"Atomistic Simulation of Nanoscale Devices","authors":"Youseung Lee, Jiang Cao, M. Luisier","doi":"10.1109/MNANO.2023.3278968","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3278968","url":null,"abstract":"Device simulation is nowadays fully integrated into the production tool chain of transistors. The geometry of the latter can be carefully optimized, possible design pitfalls can be identified early on, and the obtained experimental data can be analyzed in detail thanks to state-of-the-art technology computer aided design tools. However, on the one hand, the dimensions of transistors are reaching the atomic scale. On the other hand, novel functionalities (e.g., light emission/detection) and materials, for example III-V semiconductors, are being added to silicon-based chips. To cope with these challenges it is crucial that device simulators go beyond classical theories, pure electronic transport, and continuum models. The inclusion of quantum mechanical phenomena, electro-thermal effects, and light-matter interactions in systems made of thousands of atoms and of various materials has become critical. In this paper, we review one approach that satisfies all these requirements, the Non-equilibrium Green’s Function (NEGF) formalism, focusing on its combination with ab initio bandstructure models. The NEGF method allows to treat electrical, thermal, and optical transport at the quantum mechanical level in multi-material, multi-functional devices, without any empirical parameters. Besides advanced logic switches, it can be used to simulate e.g., photo-detectors, thermoelectric generators, or memory cells composed of almost any materials, in the ballistic limit of transport and in the presence of scattering. The key features of NEGF are summarized first, then selected applications are presented, finally challenges and opportunities are discussed.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"4-14"},"PeriodicalIF":1.6,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45551013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Material, Device and Circuit-Compatible Modeling of Ferroelectric Devices 铁电器件的材料、器件和电路兼容建模

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-08-01 DOI: 10.1109/MNANO.2023.3278970

Revanth Koduru, Tanmoy Kumar Paul, S. Gupta

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Designing Future Quantum-Based Nanoelectronics Through Modeling and Simulation [Guest Editorial] 通过建模和仿真设计未来基于量子的纳米电子学[客座评论]

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-08-01 DOI: 10.1109/mnano.2023.3279710

J. Weinbub, R. Kotlyar

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The Editors’ Desk [The Editors' Desk] 编辑台〔编辑台〕

IEEE Nanotechnology Magazine Pub Date : 2023-08-01 DOI: 10.1109/mnano.2023.3279708

Bing Sheu, Shao-Ku Kao

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Review of Simulation Methods for Design of Spin Logic 自旋逻辑设计的仿真方法综述

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-08-01 DOI: 10.1109/MNANO.2023.3278971

Dmitri E. Nikonov, Hai Li, I. Young

引用次数: 0

Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects 存在缺陷的二维材料基纳米电子器件建模

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-08-01 DOI: 10.1109/MNANO.2023.3278969

T. Knobloch, Dominic Waldhoer, T. Grasser

引用次数: 0