IEEE Nanotechnology Magazine最新文献

Guest Editorial [Guest Editorial] 特邀社论 [特邀社论］

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-12-01 DOI: 10.1109/mnano.2023.3319189

Ching-Ray Chang, Chao-Sung Lai

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2023 Index IEEE Nanotechnology Magazine Vol. 17 2023 索引 IEEE 纳米技术杂志第 17 卷

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-12-01 DOI: 10.1109/mnano.2023.3335690

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The MENED Program at Nanotechnology Council [Column] 纳米技术理事会的 MENED 计划 [专栏］

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-12-01 DOI: 10.1109/mnano.2023.3316876

M. B. Lodi, R. Sliz, Kremena Makasheva

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President's Farewell Message [President's Farewell Message] 总统告别辞 [总统告别辞］

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-12-01 DOI: 10.1109/mnano.2023.3316868

Fabrizio Lombardi

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The Editors’ Desk [Editor's Desk] 编辑台 [编辑台]

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-12-01 DOI: 10.1109/mnano.2023.3319188

Bing J. Sheu, Shao-Ku Kao

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Pulse-Programmed Short-Term Plasticity and Long-Term Potentiation of MoS2 Memristive Devices 二硫化钼记忆器件的脉冲程序化短期可塑性和长期增强

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/MNANO.2023.3297105

S. Ki, Mingze Chen, Xiaogan Liang

{"title":"Pulse-Programmed Short-Term Plasticity and Long-Term Potentiation of MoS2 Memristive Devices","authors":"S. Ki, Mingze Chen, Xiaogan Liang","doi":"10.1109/MNANO.2023.3297105","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3297105","url":null,"abstract":"Short-term plasticity (STP) and long-term potentiation (LTP) properties of neural synapses are crucial for developing complex neuromorphic systems and functions. In this work, we fabricated two-terminal memristors with multi-layer MoS2 channels and investigated pulse-programmed short-term and long-term synaptic responses. This work indicates that MoS2 memristors exhibit different magnitudes of STP and LTP effects under different pulse programming settings. Specifically, we utilized the paired-pulse facilitation (PPF) function for fitting experimentally measured relaxation curves of MoS2 memristors to quantitatively evaluate the relative dominance of STP and LTP effects. Such analytic results show that the absolute magnitudes of both STP and LTP effects in a memristor increase with increasing pulse frequency, pulse voltage (or amplitude), pulse duty cycle, and a total number of applied pulses, whereas the relative dominance levels of these two effects are typically not in a simple monotonous relationship with these pulse parameters. This indicates that the programming pulse parameters profoundly affect pulse-field-mediated charge trapping and S-vacancy migration processes which are responsible for the observed STP and LTP effects, respectively. This work provides a useful guideline for activating STP and LTP effects in emerging memristive devices based on 2D layered semiconductors, which could be deployed for making synaptic nodes in hardware-based artificial neural networks or neuromorphic sensory devices capable of sensing spatiotemporal events.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"24-29"},"PeriodicalIF":1.6,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46593182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Tap. Connect. Network. Share. 水龙头。连接。网络。份额。

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/mnano.2023.3318841

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Towards Energy-Efficient Computing Hardware Based on Memristive Nanodevices 基于忆阻纳米器件的节能计算硬件

IF 1.6

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/MNANO.2023.3297106

Y. Huang, Vignesh Ravichandran, Wuyu Zhao, Q. Xia

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How to Achieve Large-Area Ultra-Fast Operation of MoS₂ Monolayer Flash Memories? 如何实现MoS2单层快闪存储器的大面积超快速运算?

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/mnano.2023.3297118

Guilherme Migliato Marega, Zhenyu Wang, Yanfei Zhao, Hyun Goo Ji, Asmund Ottesen, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis

{"title":"How to Achieve Large-Area Ultra-Fast Operation of MoS<sub>2</sub> Monolayer Flash Memories?","authors":"Guilherme Migliato Marega, Zhenyu Wang, Yanfei Zhao, Hyun Goo Ji, Asmund Ottesen, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis","doi":"10.1109/mnano.2023.3297118","DOIUrl":"https://doi.org/10.1109/mnano.2023.3297118","url":null,"abstract":"Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector-matrix multiplications while avoiding the “von Neumann bottleneck.” Despite these promises, no single material platform meets all the requirements for the fabrication of this new processor technology. Recently, flash memories based on monolayer MoS2 have been shown to achieve ultra-fast operation, overcoming one of the main drawbacks of this memory type. Together with its other characteristics, this makes them a promising candidate for the base elements of this technology. However, the question remains of how to achieve large-area ultra-fast operation of MoS2 monolayer flash memories. In this work, we will compare large-area flash memories based on MoS2 used in past realizations of in-memory systems and analyze the improvements needed to achieve ultra-fast performance for in-memory applications.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135324013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The Editors’ Desk [The Editors' Desk] 编辑台〔编辑台〕

IEEE Nanotechnology Magazine Pub Date : 2023-10-01 DOI: 10.1109/mnano.2023.3300069

Bing Sheu, Shao-Ku Kao

引用次数: 0