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2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)最新文献

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The undirected feedback vertex set problem with application to wavelength converter placement on WDM networks 无向反馈顶点集问题及其在WDM网络中波长转换器放置中的应用
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672317
Toshinori Yamada, Yusuke Tada, Taka-aki Tanaka
{"title":"The undirected feedback vertex set problem with application to wavelength converter placement on WDM networks","authors":"Toshinori Yamada, Yusuke Tada, Taka-aki Tanaka","doi":"10.1109/SM2ACD.2010.5672317","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672317","url":null,"abstract":"This paper considers a size constrained version of the undirected feedback vertex set problem motivated by placing wavelength converters on a WDM network efficiently, and proves that this problem is NP-complete even in several special cases. Moreover, the paper presents a simple approximation algorithm for a minimization version of the problem using an algorithm for the original minimum undirected feedback vertex set problem.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121024732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling and simulation of power BAW resonators and filters 功率BAW谐振器和滤波器的建模与仿真
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672356
F. Constantinescu, M. Nitescu, A. Gheorghe
{"title":"Modeling and simulation of power BAW resonators and filters","authors":"F. Constantinescu, M. Nitescu, A. Gheorghe","doi":"10.1109/SM2ACD.2010.5672356","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672356","url":null,"abstract":"The nonlinear circuit models for power BAW resonators, which reproduce both amplitude-frequency and intermodulation effects, are presented. The “frequency warping” effect in high Q circuit simulation is analyzed.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121474763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Switching angle optimization based Genetic algorithms for harmonic reduction in three-phase PWM inverters 基于遗传算法的开关角优化三相PWM逆变器谐波抑制
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672311
Osama Y. Mahmood AL-Rawi, N. M. Noaman, Mohammed Majed Mohammed AlKhalidy
{"title":"Switching angle optimization based Genetic algorithms for harmonic reduction in three-phase PWM inverters","authors":"Osama Y. Mahmood AL-Rawi, N. M. Noaman, Mohammed Majed Mohammed AlKhalidy","doi":"10.1109/SM2ACD.2010.5672311","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672311","url":null,"abstract":"A simple but powerful design method based on real-coded Genetic algorithms (GAs) to solve the minimization of the Total Harmonic Distortion (THD) criterion is obtained. GAs provides a much simpler approach to off-line tuning of Pulse width Modulation (PWM) switching angles than the rather complicated non-genetic optimization algorithms. Genetic algorithms are exploratory search and optimization procedures that were devised on the principles of natural evolution and population genetics.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122489809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Symbolic modelling and design of parallel capacitors in dc-dc converters 直流-直流变换器并联电容器的符号建模与设计
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672293
Andrea Cantillo, A. De Nardo, N. Femia, W. Zamboni
{"title":"Symbolic modelling and design of parallel capacitors in dc-dc converters","authors":"Andrea Cantillo, A. De Nardo, N. Femia, W. Zamboni","doi":"10.1109/SM2ACD.2010.5672293","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672293","url":null,"abstract":"This paper presents a novel method for the design of filter capacitors of dc-dc switching regulators, using a combination of ceramic and electrolytic capacitors. The method is based on the definition of Acceptability Regions, which allow a straightforward identification of minimal size and part count commercial components complying with the voltage ripple and Irms current specifications on the capacitors.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131444320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An analytical drain current model for GS GAA MOSFET including interfacial traps 含界面陷阱的GS GAA MOSFET漏极电流分析模型
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672339
M. Abdi, F. Djeffal, T. Bentercia, A. Benhaya
{"title":"An analytical drain current model for GS GAA MOSFET including interfacial traps","authors":"M. Abdi, F. Djeffal, T. Bentercia, A. Benhaya","doi":"10.1109/SM2ACD.2010.5672339","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672339","url":null,"abstract":"It's widely recognized that Gate-All-Around (GAA) MOSFETs are considered among the most probable choices to continue CMOS performance boost beyond the conventional scaling frontiers. Such device offers the best controllability of short-channel effects claimed to be the predominant factor limiting how far the downscaling can be achieved. However, the lack of analytic compact models for degraded drain current can easily be notified in literature. Therefore, in this work we investigate the immunity of GAA MOSFET against the hotcarrier-induced degradation effect after considering the step-function approximation for interface charge distribution. The importance of including a high-k layer into the device architecture is also studied; the damaged device model presented in this work provides a simple and accurate approach for simulating the circuit behavior after hot-carrier damage.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121265799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A two-dimensional model for the potential distribution and depletion layer width of the short gate-length GaAs MESFET's 建立了短栅长GaAs MESFET的势分布和耗尽层宽度的二维模型
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672349
S. Khemissi, C. Azizi
{"title":"A two-dimensional model for the potential distribution and depletion layer width of the short gate-length GaAs MESFET's","authors":"S. Khemissi, C. Azizi","doi":"10.1109/SM2ACD.2010.5672349","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672349","url":null,"abstract":"A new two-dimensional analytical model for the potential distribution and depletion-layer width for the short-gate GaAs MESFET's has been presented in this paper. The solution of the two-dimensional Poisson's equation has been considered as the superposition of the solution of one-dimensional Poisson's equation in the lateral direction and the two-dimensional Laplace equation with suitable boundary conditions. The remarkable feature of the proposed model is that, in the hand the simplicity of the mathematical expressions and in the other hand the acceptable distribution for the potential and charge in the channel. The numerical results have been presented for the potential distribution and depletion-layer width for different parameters such as the drain-source voltage, gate-length, active-layer thickness and doped profile. It is observed that for the GaAs MESFET's, as the gate-length is decreased, the 2-D potential is increased and this demonstrates the importance of the two-dimensional analysis for the short-gate devices.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115395065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Symbolic techniques in neural network based fault diagnosis of analog circuits 基于神经网络的模拟电路故障诊断中的符号技术
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672314
F. Grasso, A. Luchetta, S. Manetti, M. C. Piccirilli
{"title":"Symbolic techniques in neural network based fault diagnosis of analog circuits","authors":"F. Grasso, A. Luchetta, S. Manetti, M. C. Piccirilli","doi":"10.1109/SM2ACD.2010.5672314","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672314","url":null,"abstract":"The importance of symbolic analysis in the neural network approach to analog circuit fault diagnosis is discussed in this paper. Theoretical explanations and two explicative examples are presented, by taking into account the k-fault hypothesis.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123467045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Modal domain analysis of asymmetric coupled planar structures: The quasi symmetric model 非对称耦合平面结构的模态域分析:准对称模型
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672306
A. Khodja, R. Touhami, M. Yagoub, H. Baudrand
{"title":"Modal domain analysis of asymmetric coupled planar structures: The quasi symmetric model","authors":"A. Khodja, R. Touhami, M. Yagoub, H. Baudrand","doi":"10.1109/SM2ACD.2010.5672306","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672306","url":null,"abstract":"The objective of this paper is to demonstrate in which case asymmetric coupled structures can be analyzed as symmetric line models in order to use the quasi-symmetric approach. For this aim, a rigorous formulation was used; trial functions of even and odd modes were obtained from the symmetric case, and thus proposed for the asymmetric case. A comparative study of dispersion parameters shows the limits of the quasi-symmetric model validity with respect to asymmetries due to influence of shielding and metal strips/or slots widths difference.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129706289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanometer ballistic MOSFET'S: Modeling, simulation and applications of digital circuits 纳米弹道MOSFET:数字电路的建模、仿真和应用
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672358
Mustafa M. El-Muradi, Khalf alla A. Khalf alla, Walid T. Shanab
{"title":"Nanometer ballistic MOSFET'S: Modeling, simulation and applications of digital circuits","authors":"Mustafa M. El-Muradi, Khalf alla A. Khalf alla, Walid T. Shanab","doi":"10.1109/SM2ACD.2010.5672358","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672358","url":null,"abstract":"An accurate new and simple numeral modeling of nano-scale dual gate n- MOSFET device in the ballistic region is presented. The model and the analysis is performed with channel length below 20 nm where electron transport is predominantly ballistic. In this paper a new developed modeling approach based on Boltzmann transport equation and Poisson equation in an n-channel nanoscale double-gate MOSFET is provided. The implications of ballistic transport to modeling a nanoscale MOSFET based on moment-based macroscopic transport models are discussed. The results show that the decrease in channel length toward 20nm and below increases the device performance. As it depends on the oxide thickness and the channel doping these characteristics make DG.MOSFET potentially suitable for logic- and digital circuits. The model has been implemented in the circuit simulation techniques such as Ring oscillators, CMOS inverters and other low power digital circuits.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124780362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and optimization of inductive power transmission for implantable sensor system 植入式传感器系统感应动力传输的设计与优化
2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD) Pub Date : 2010-12-17 DOI: 10.1109/SM2ACD.2010.5672335
Enver G. Kilinc, C. Dehollain, F. Maloberti
{"title":"Design and optimization of inductive power transmission for implantable sensor system","authors":"Enver G. Kilinc, C. Dehollain, F. Maloberti","doi":"10.1109/SM2ACD.2010.5672335","DOIUrl":"https://doi.org/10.1109/SM2ACD.2010.5672335","url":null,"abstract":"This paper presents a methodology to design and to optimize inductive power link for biomedical applications. The importance of the operation frequency on the application is expressed. A model of inductive link is presented. The dimensions of the coils are compatible with the size of a mouse and the mouse cage. The simulation results are in good agreement with the analysis.","PeriodicalId":442381,"journal":{"name":"2010 XIth International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121370513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
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