Photonics West - Optoelectronic Materials and Devices最新文献_第7页

Engineering of optical modes in vertical-cavity microresonators by aperture placement: applications to single-mode and near-field lasers 垂直腔微谐振器中光学模式的设计:单模和近场激光器的应用

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-20 DOI: 10.1117/12.2077012

V. Shchukin, N. Ledentsov, J. Kropp, G. Steinle, K. Choquette, S. Burger, F. Schmidt

{"title":"Engineering of optical modes in vertical-cavity microresonators by aperture placement: applications to single-mode and near-field lasers","authors":"V. Shchukin, N. Ledentsov, J. Kropp, G. Steinle, K. Choquette, S. Burger, F. Schmidt","doi":"10.1117/12.2077012","DOIUrl":"https://doi.org/10.1117/12.2077012","url":null,"abstract":"Oxide–confined vertical cavity surface emitting lasers (VCSEL) are inherently leaky structures, despite the fact that the oxidized periphery region surrounding the all–semiconductor core has a lower refractive index. The reason is that the VCSEL modes in the non–oxidized core region can be coupled to tilted modes in the selectively oxidized periphery as the orthogonality between the core mode and the modes at the periphery is broken by the oxidation–induced optical field redistribution. Engineered VCSEL designs show that the overlap between the VCSEL mode of the core and the tilted mode in the periphery can reach >30% resulting in significant leakage. Three–dimensional modeling confirms that the leakage losses are much stronger for high order transverse modes which have a higher field intensity close to the oxidized region. Single mode lasing in the fundamental mode can thus proceed up to large aperture diameters. A 850–nm GaAlAs leaky VCSEL based on this concept is designed, modeled and fabricated, showing single–mode lasing with aperture diameters up to 5 μm. Side mode suppression ratio >20dB is realized at the current density of 10kA/cm2 in devices with the series resistance of 90 Ω.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126052820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Combining, homogenizing, and shaping beams from multiple laser emitters using multimode optical fibers and waveguides used in display systems 使用显示系统中使用的多模光纤和波导，对来自多个激光发射器的光束进行组合、均匀化和整形

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-20 DOI: 10.1117/12.2079651

H. Baghsiahi, S. Day, D. Selviah

引用次数: 1

High-speed and scalable high-power VCSEL arrays and their applications 高速和可扩展的大功率VCSEL阵列及其应用

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-20 DOI: 10.1117/12.2080235

M. Warren, R. F. Carson, J. R. Joseph, Thomas E. Wilcox, Preethi Dacha, David J. Abell, Kirk J. Otis

引用次数: 9

Evanescent fields of laser written waveguides 激光写入波导的倏逝场

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-20 DOI: 10.1117/12.2077189

Dario Jukić, T. Pohl, J. Götte

引用次数: 2

400mW output power at 445 nm with narrowband emission from an external cavity diode laser system 外腔二极管激光系统在445 nm窄带发射的400mW输出功率

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-20 DOI: 10.1117/12.2076926

Norman Ruhnke, A. Müller, B. Eppich, M. Maiwald, B. Sumpf, G. Erbert, G. Tränkle

引用次数: 1

Design, fabrication and demonstration of heterogeneously III-V/Si laser with a compact optical vertical interconnect access 具有紧凑型光学垂直互连接入的异质III-V/Si激光器的设计、制造和演示

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-18 DOI: 10.1117/12.2086929

Jing Pu, D. Ng, K. Lim, V. Krishnamurthy, Chee-Wei Lee, Kun Tang, Anthony Yew Seng Kay, T. Loh, Qian Wang

{"title":"Design, fabrication and demonstration of heterogeneously III-V/Si laser with a compact optical vertical interconnect access","authors":"Jing Pu, D. Ng, K. Lim, V. Krishnamurthy, Chee-Wei Lee, Kun Tang, Anthony Yew Seng Kay, T. Loh, Qian Wang","doi":"10.1117/12.2086929","DOIUrl":"https://doi.org/10.1117/12.2086929","url":null,"abstract":"A new heterogeneously integrated III-V/Si laser structure is reported in this letter, which consists of a III-V ridge waveguide gain section on silicon, III-V/Si optical vertical interconnect accesses (VIAs) and silicon-oninsulator (SOI) nanophotonic waveguide sections. The III-V semiconductor layers are introduced on top of the 300 nm thick SOI layer through low temperature, plasma assisted direct wafer-bonding and etched to form III-V ridge waveguide on silicon as the gain section. The optical VIA is formed by tapering the III-V and the beneath SOI in the same direction with a length of 50 μm for efficient coupling of light down to the 600 nm wide silicon nanophotonic waveguide or vice versa. Fabrication details and specification characterizations of this heterogeneous III-V/Si Fabry–Pérot (FP) laser are given. The fabricated FP laser shows a continuous-wave lasing with a threshold current of 65 mA at room temperature and the slope efficiency from single facet is 144 mW/A. The maximal single facet emitting power is about 4.5 mW at a current of 100 mA and the side-mode suppression ratio is ~30 dB. This new heterogeneously integrated III-V/Si laser structure demonstrated enables more complex laser configuration with a sub-system on-chip for various applications.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129716532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Image sensor innovations for low light levels with active imaging features 具有主动成像功能的低光水平图像传感器创新

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-18 DOI: 10.1117/12.2185892

G. Powell, P. Fereyre

引用次数: 0

Bending strength measurements at different materials used for IR-cut filters in mobile camera devices 在不同材料的弯曲强度测量用于红外滤光片在移动相机设备

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-16 DOI: 10.1117/12.2079310

V. Dietrich, P. Hartmann, Franca Kerz

{"title":"Bending strength measurements at different materials used for IR-cut filters in mobile camera devices","authors":"V. Dietrich, P. Hartmann, Franca Kerz","doi":"10.1117/12.2079310","DOIUrl":"https://doi.org/10.1117/12.2079310","url":null,"abstract":"Digital cameras are present everywhere in our daily life. Science, business or private life cannot be imagined without digital images. The quality of an image is often rated by its color rendering. In order to obtain a correct color recognition, a near infrared cut (IRC-) filter must be used to alter the sensitivity of imaging sensor. Increasing requirements related to color balance and larger angle of incidence (AOI) enforced the use of new materials as the e.g. BG6X series which substitutes interference coated filters on D263 thin glass. Although the optical properties are the major design criteria, devices have to withstand numerous environmental conditions during use and manufacturing - as e.g. temperature change, humidity, and mechanical shock, as wells as mechanical stress. The new materials show different behavior with respect to all these aspects. They are usually more sensitive against these requirements to a larger or smaller extent. Mechanical strength is especially different. Reliable strength data are of major interest for mobile phone camera applications. As bending strength of a glass component depends not only upon the material itself, but mainly on the surface treatment and test conditions, a single number for the strength might be misleading if the conditions of the test and the samples are not described precisely,. Therefore, Schott started investigations upon the bending strength data of various IRC-filter materials. Different test methods were used to obtain statistical relevant data.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115651654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Photon pairs from a biexciton cascade with feedback-controlled polarization entanglement 反馈控制偏振纠缠的双激子级联光子对

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-16 DOI: 10.1117/12.2075579

S. M. Hein, F. Schulze, A. Carmele, A. Knorr

引用次数: 0

Upconversion against direct emission in Er3+-Tm3+-codoped tellurite-glass containing gold nanoparticles 含金纳米颗粒Er3+-Tm3+共掺碲酸盐玻璃的上转换反直接发射

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-03-16 DOI: 10.1117/12.2079344

V. G Rivera, O. B. Silva, M. El-Amraoui, Y. Ledemi, Y. Messaddeq, E. Marega

引用次数: 2