Engineering of optical modes in vertical-cavity microresonators by aperture placement: applications to single-mode and near-field lasers

V. Shchukin, N. Ledentsov, J. Kropp, G. Steinle, K. Choquette, S. Burger, F. Schmidt
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引用次数: 7

Abstract

Oxide–confined vertical cavity surface emitting lasers (VCSEL) are inherently leaky structures, despite the fact that the oxidized periphery region surrounding the all–semiconductor core has a lower refractive index. The reason is that the VCSEL modes in the non–oxidized core region can be coupled to tilted modes in the selectively oxidized periphery as the orthogonality between the core mode and the modes at the periphery is broken by the oxidation–induced optical field redistribution. Engineered VCSEL designs show that the overlap between the VCSEL mode of the core and the tilted mode in the periphery can reach >30% resulting in significant leakage. Three–dimensional modeling confirms that the leakage losses are much stronger for high order transverse modes which have a higher field intensity close to the oxidized region. Single mode lasing in the fundamental mode can thus proceed up to large aperture diameters. A 850–nm GaAlAs leaky VCSEL based on this concept is designed, modeled and fabricated, showing single–mode lasing with aperture diameters up to 5 μm. Side mode suppression ratio >20dB is realized at the current density of 10kA/cm2 in devices with the series resistance of 90 Ω.
垂直腔微谐振器中光学模式的设计:单模和近场激光器的应用
尽管全半导体核心周围的氧化外围区域具有较低的折射率,但氧化约束垂直腔面发射激光器(VCSEL)本质上是泄漏结构。这是因为氧化引起的光场重分布打破了核心模式与外围模式之间的正交性,从而使得非氧化核心区的VCSEL模式可以与选择性氧化外围的倾斜模式耦合。工程VCSEL设计表明,核心的VCSEL模式与外围倾斜模式之间的重叠可以达到bbb30 %,导致严重的泄漏。三维模型证实了高阶横模的泄漏损失要大得多,因为在靠近氧化区的地方有较高的场强。因此,基模中的单模激光可以进行到大孔径。基于该概念,设计、建模和制造了850 nm的GaAlAs泄漏VCSEL,显示单模激光,孔径高达5 μm。在串联电阻为90 Ω的器件中,在电流密度为10kA/cm2时实现侧模抑制比>20dB。
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