Photonics West - Optoelectronic Materials and Devices最新文献

Design and performance of multicore fiber optimized towards communications and sensing applications 针对通信和传感应用优化的多芯光纤的设计和性能

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-30 DOI: 10.1117/12.2076950

L. Cooper, A. Webb, A. Gillooly, M. Hill, T. Read, P. Maton, J. Hankey, A. Bergonzo

{"title":"Design and performance of multicore fiber optimized towards communications and sensing applications","authors":"L. Cooper, A. Webb, A. Gillooly, M. Hill, T. Read, P. Maton, J. Hankey, A. Bergonzo","doi":"10.1117/12.2076950","DOIUrl":"https://doi.org/10.1117/12.2076950","url":null,"abstract":"We report on the rapid prototyping platform, developed at Fibercore, for producing spun multicore fiber (MCF) which maintains the high-specification and quality of a large-scale manufacturing process adding the versatility to fully customize fiber for specific applications. Such MCF has been produced by using an ultrasonic drill to accurately position the core holes in the cladding glass, achieving <0.4µm accuracy in fiber. Cross-talk between cores has been minimized by implementing high numerical aperture cores of 0.20, with levels less than -55dB over 400m. Additionally, the high level of germanium doping also allows fiber Bragg gratings (FBGs) to be written into each core without the need for hydrogen loading. Finally, in order to enable distinction between any potential twist and strain in the fiber from the bend under measurement, a permanent twist has been introduced in the fiber by spinning the preform whilst it is being drawn. The manufacturing cycle time for the fiber is 8 days, allowing rapid prototyping and repeat development cycles to be tested over a short period of time when creating new fiber designs.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130260389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Gain equalization of FM-EDFA by optimizing ring doping and mode content of the pump with a genetic algorithm 利用遗传算法优化环掺杂和泵模含量实现FM-EDFA的增益均衡

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-28 DOI: 10.1117/12.2078565

Changren Qiu, Tianxin Yang, Dongfang Jia, Zhaoying Wang, Chunfeng Ge

引用次数: 1

Novel method of generation of linear frequency modulation optical waveforms with swept range of over 200 GHz for lidar systems 激光雷达系统中扫描范围超过200ghz的线性调频光波形产生的新方法

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-28 DOI: 10.1117/12.2078205

Yuchen Zhang, Tianxin Yang, Tianhe Wang, Zhaoying Wang, Dongfang Jia, Chunfeng Ge

引用次数: 0

Flexible waveguide enabled single-channel terahertz endoscopic system 柔性波导单通道太赫兹内窥镜系统

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-28 DOI: 10.1117/12.2079417

P. Doradla, K. Alavi, C. Joseph, R. Giles

{"title":"Flexible waveguide enabled single-channel terahertz endoscopic system","authors":"P. Doradla, K. Alavi, C. Joseph, R. Giles","doi":"10.1117/12.2079417","DOIUrl":"https://doi.org/10.1117/12.2079417","url":null,"abstract":"Colorectal cancer is the third most commonly diagnosed cancer in the world. The current standard of care for colorectal cancer is the conventional colonoscopy, which relies exclusively on the Physician’s experience. Continuous wave terahertz (THz) imaging has the potential to offer a safe, noninvasive medical imaging modality for detecting cancers. The current study demonstrates the design and development of a prototype terahertz endoscopic system based on flexible metal-coated terahertz waveguides. A CO2 pumped Far-Infrared molecular gas laser operating at 584 GHz frequency was used for illuminating the tissue, while the reflected signals were detected using liquid Helium cooled silicon bolometer. The continuous-wave terahertz imaging system utilizes a single waveguide channel to transmit the radiation and collect the back reflected intrinsic terahertz signal from the sample and is capable of operation in both transmission and reflection modalities. The two dimensional reflectance images obtained using a prototype terahertz endoscopic system showed intrinsic contrast between cancerous and normal regions of the colorectal tissue, thereby demonstrating the potential impact of terahertz imaging for in vivo cancer detection.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131760208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation 背面质子辐照增强AlGaN/GaN高电子迁移率晶体管失态漏击穿电压

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-27 DOI: 10.1117/12.2076676

F. Ren, Ya-Hsi Hwang, S. Pearton, E. Patrick, M. Law

{"title":"Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation","authors":"F. Ren, Ya-Hsi Hwang, S. Pearton, E. Patrick, M. Law","doi":"10.1117/12.2076676","DOIUrl":"https://doi.org/10.1117/12.2076676","url":null,"abstract":"Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131869797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Future and present technologies of solid state lighting (Presentation Video) 固态照明技术的未来与现状(演讲视频)

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-27 DOI: 10.1117/12.2197203

S. Nakamura

引用次数: 1

InGaN LEDs prepared on β-Ga2O3 (-201) substrates β-Ga2O3(-201)衬底制备InGaN led

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-27 DOI: 10.1117/12.2076114

K. Iizuka, Y. Morishima, A. Kuramata, Yu-Jiun Shen, C. Tsai, Ying-Yong Su, Gavin Liu, T. Hsu, J. Yeh

引用次数: 6

Silicon integrated nanophotonics: from fundamental science to manufacturable technology (Presentation Video) 硅集成纳米光子学:从基础科学到可制造技术(演示视频)

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-23 DOI: 10.1117/12.2197116

Y. Vlasov

引用次数: 6

The relationship between polymer waveguide optical interconnection end facet roughness and the optical input and output coupling losses 聚合物波导光互连端面粗糙度与光输入输出耦合损耗的关系

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-20 DOI: 10.1117/12.2079571

H. Baghsiahi, Kai Wang, R. Pitwon, David R. Selviah

{"title":"The relationship between polymer waveguide optical interconnection end facet roughness and the optical input and output coupling losses","authors":"H. Baghsiahi, Kai Wang, R. Pitwon, David R. Selviah","doi":"10.1117/12.2079571","DOIUrl":"https://doi.org/10.1117/12.2079571","url":null,"abstract":"The RMS surface roughness of an optical polymer waveguide end facet cut by a milling router and measured by AFM is investigated for a range of rotation speeds and translation speeds of the router. It was found that 1 flute (cutting edge) routers gave significantly less rough surfaces than 2 or 3 flute routers. The best results were achieved for a 1 flute router when the milling bit was inserted from the copper layer side of the board with a rotation speed of 15,000 rpm and a translation speed of 0.25 m/min which minimized the waveguide core end facet RMS roughness to 183 ± 8 nm and gave input optical coupling loss of 1.7 dB ± 0.5 dB and output optical coupling loss of 2.0 dB ± 0.7 dB. The relationship between optical coupling loss at the input and output of the waveguides and waveguide end facet roughness is also investigated in this paper. The ratio of RMS roughness to autocorrelation length of the roughness is shown to have a quantified linear relationship with experimental measurements of optical insertion loss, input optical coupling loss and output optical coupling loss. A new fabrication technique for cut waveguide end facet treatment has been proposed and demonstrated which reduces the insertion loss by 2.60 dB ± 1.3 dB which is more than that achieved by the closest available index matching fluid which gave 2.23 dB ± 1.2 dB and which is far more robust for use in commercial products.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134499855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accurate simulation of terahertz transmission through doped silicon junctions 通过掺杂硅结的太赫兹传输的精确模拟

Photonics West - Optoelectronic Materials and Devices Pub Date : 2015-04-20 DOI: 10.1117/12.2077007

C. Jen, C. Richter

引用次数: 2