{"title":"固态照明技术的未来与现状(演讲视频)","authors":"S. Nakamura","doi":"10.1117/12.2197203","DOIUrl":null,"url":null,"abstract":"Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate is getting popular to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Future and present technologies of solid state lighting (Presentation Video)\",\"authors\":\"S. Nakamura\",\"doi\":\"10.1117/12.2197203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate is getting popular to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.\",\"PeriodicalId\":432115,\"journal\":{\"name\":\"Photonics West - Optoelectronic Materials and Devices\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photonics West - Optoelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2197203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics West - Optoelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2197203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Future and present technologies of solid state lighting (Presentation Video)
Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate is getting popular to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.