通过掺杂硅结的太赫兹传输的精确模拟

C. Jen, C. Richter
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引用次数: 2

摘要

在之前的工作中,我们展示了透射模式太赫兹时域光谱(THz-TDS)检测硅中掺杂谱差异和偏差的能力。这种能力对半导体和光伏行业的质量控制有潜在的用处。我们分享了随后的实验结果,表明太赫兹与电子和空穴的相互作用足够强,可以识别n型和p型掺杂谱的变化。我们还表明,相对较长的波长(~ 1mm)太赫兹辐射允许这种方法与表面处理相兼容,例如在太阳能工业中通常使用的纹理(散射层)。在这项工作中,我们不断证明了当前太赫兹光学模型可以模拟通过已知掺杂谱(由SIMS确定)的结传输的太赫兹辐射的功率谱的准确性。我们得出结论,现有的光学模型可以很好地预测硅结中的太赫兹传输和吸收。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate simulation of terahertz transmission through doped silicon junctions
In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. This capability is potentially useful for quality control in the semiconductor and photovoltaic industry. We shared subsequent experimental results revealing that terahertz interactions with both electrons and holes are strong enough to recognize both n- and p-type doping profile changes. We also displayed that the relatively long wavelength (~ 1 mm) of THz radiation allows this approach to be compatible with surface treatments like for instance the texturing (scattering layer) typically used in the solar industry. In this work we continuously demonstrate the accuracy with which current terahertz optical models can simulate the power spectrum of terahertz radiation transmitted through junctions with known doping profiles (as determined with SIMS). We conclude that current optical models predict the terahertz transmission and absorption in silicon junctions well.
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