2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)最新文献

筛选
英文 中文
Strain Dependent Carrier Mobility in 8 − Pmmn Borophene: ab-initio study 8−Pmmn硼罗芬中菌株依赖载流子迁移率:ab-initio研究
Shalini Tomar, P. Rastogi, B. Bhadoria, S. Bhowmick, A. Agarwal, S. Yogesh Chauhan
{"title":"Strain Dependent Carrier Mobility in 8 − Pmmn Borophene: ab-initio study","authors":"Shalini Tomar, P. Rastogi, B. Bhadoria, S. Bhowmick, A. Agarwal, S. Yogesh Chauhan","doi":"10.1109/CONECCT.2018.8482369","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482369","url":null,"abstract":"Recently two dimensional layer of 8-Pmmn borophene has been successfully fabricated on single crystal Ag(111) substrate and shown to have a tilted anisotropic Diraccone. In this paper we investigate the strain dependent carrier mobility in 8 - Pmmn borophene. We calculate the electronic structure, group velocity and carrier mobility of 8 - Pmmn borophene using density functional theory coupled with Boltzmann transport method using constant relaxation time approximation. Our results show that bandstructure anisotropy results in anisotropic group velocity and mobility. The intrinsic group velocity and mobility at room temperature are calculated to be 2. $17 times 10^{6ms^{-1}}$, 2. $42 times 10^{6ms^{-1}}$ and 1. $82 times 10^{6 cm^{2V^{-1s^{-1}}},2.26times 10^{6 cm^{2V^{-1s^{-1}}}}}$ in $+x, +y$ direction as well as $1.56times 10^{6ms^{-1}}, 2.43times 10^{6ms^{-1}}$ and $9.42times 10^{5} cm^{2}V^{-1}s^{-1}, 2.29times 10^{6 cm^{2V^{-1s^{-1}}}}$, in - x, - y directions, respectively. Both of them are found to be highest under 1% compressive strain.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"312 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114010861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diameter Scaling in III-V Gate-All-Around Transistor for Different Cross-Sections 不同截面下III-V栅极全能晶体管的直径缩放
P. Rastogi, A. Dasgupta, A. Chauhan
{"title":"Diameter Scaling in III-V Gate-All-Around Transistor for Different Cross-Sections","authors":"P. Rastogi, A. Dasgupta, A. Chauhan","doi":"10.1109/CONECCT.2018.8482365","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482365","url":null,"abstract":"We explore the impact of channel area scaling in InGaAs gate-all-around transistor for circular (CNW), square (SNW) and triangular (TNW) cross-sections using coupled selfconsistent Schrodinger-Poisson solver. We find that, among all three cross-sections, TNW shows the strongest confinement effect for all the considered dimensions. The confinement effects are significant at 10 nm for TNW and at 5 nm for SNW and CNW. We further analyzed the performance figure of merits (threshold voltage, current ON/OFF ratio, sub-threshold slope, ON current and intrinsic delay with cross-section area scaling) for all three cross-sections. Based on the scaling trend we find that CNW with 10 nm diameter is the most optimum among all three crosssections.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115096211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multilayer vehicle classification integrated with single frame optimized object detection framework using CNN based deep learning architecture 基于CNN深度学习架构的多层车辆分类与单帧优化目标检测框架集成
Ch. Aishwarya, Rajshekhar Mukherjee, D. Mahato
{"title":"Multilayer vehicle classification integrated with single frame optimized object detection framework using CNN based deep learning architecture","authors":"Ch. Aishwarya, Rajshekhar Mukherjee, D. Mahato","doi":"10.1109/CONECCT.2018.8482366","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482366","url":null,"abstract":"Here we have rendered a functional and architectural model of a system that assists the driver of a vehicle to detect, identify and track objects while driving. The objects detected include vehicle type as well as common on-road objects such as pedestrians. Layer structure for the system involves the design of a state-of-the-art deep learning classifier using a novel database for obtaining higher classification accuracy and another layer consisting of a single-frame object detection method to make the system more robust while limiting the processing time involved. Sub-systems integrated to facilitate the driver with relevant real-time information about his driving umwelt include vehicle identifier, number plate recognition system and creation of database consisting of collected information along with time-stamp. Performance degradation under various ambient conditions and variable environments with various synthetic noises being introduced in the video frames have been studied. Trade-off between speed and accuracy of a state-of-the-art real-time detection system implemented on various processing platforms is studied. Layers of deep learning classifier were trained using an optimized dataset consisting of static and dynamic images of vehicles to yield suitable prediction accuracy and this was combined with a system pre-trained on COCO dataset for YOLO. This helped complete the Intelligent Driver Assistant System. This paper also includes the implementation of real-time object detection on a single board computer. This concept can be tapped to create compact and portable driver assistant systems.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126981416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Duty-Cycling in Synchronized IEEE 802.15.4 Cluster-Tree Networks 同步IEEE 802.15.4簇树网络的占空比研究
Nikumani Choudhury, Rakesh Matam, M. Mukherjee
{"title":"Duty-Cycling in Synchronized IEEE 802.15.4 Cluster-Tree Networks","authors":"Nikumani Choudhury, Rakesh Matam, M. Mukherjee","doi":"10.1109/CONECCT.2018.8482385","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482385","url":null,"abstract":"IEEE 802.15.4 devices operating in beacon-enabled mode synchronize their beacon transmissions to restrict collisions and increase network lifetime. Other avenues of conserving energy in these resource constrained networks is via adaptive duty-cycling. This can be achieved by accounting for the idle listening of a coordinator and its associated devices. But, duty-cycling in a synchronized network often results in loss of synchronization and necessitates re-synchronization. In this paper, we first showcase the scope for additional energy savings in a synchronized network that can be accounted for using a adaptive duty-cycling scheme. Thereafter, we present the necessary condition that needs to be met to perform duty-cycling. We analytically determine the associated cost of synchronization in presence of an active duty-cycling mechanism and compare it with the energy conserved by performing the later. The simulation results concur with our findings and emphasize on the need for operation of synchronization and duty-cycling schemes in sync with each other to boost the overall energy savings of the network.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133001910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Vehicle Counting for Traffic Management System using YOLO and Correlation Filter 基于YOLO和相关滤波的交通管理系统车辆计数
C. S. Asha, A. V. Narasimhadhan
{"title":"Vehicle Counting for Traffic Management System using YOLO and Correlation Filter","authors":"C. S. Asha, A. V. Narasimhadhan","doi":"10.1109/CONECCT.2018.8482380","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482380","url":null,"abstract":"Vehicle counting is a process to estimate the road traffic density to assess the traffic conditions for intelligent transportation systems. With the extensive utilization of cameras in urban transport systems, the surveillance video has become a central data source. Also, real-time traffic management system has become popular recently due to the availability of handheld/mobile cameras and big-data analysis. In this work, we propose video-based vehicle counting method in a highway traffic video captured using handheld cameras. The processing of a video is achieved in three stages such as object detection by means of YOLO (You Only Look Once), tracking with correlation filter, and counting. YOLO attained remarkable outcome in the object detection area, and correlation filters achieved greater accuracy and competitive speed in tracking. Thus, we build multiple object tracking with correlation filters using the bounding boxes generated by the YOLO framework. Experimental analysis using real video sequences shows that the proposed method can detect, track and count the vehicles accurately.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130182367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
Atomistic Study of Acoustic Phonon Limited Mobility in Extremely Scaled Si and Ge Films 极尺度Si和Ge薄膜中声子有限迁移率的原子学研究
P. Rastogi, S. Bhowmick, A. Agarwal, Y. Chauhan
{"title":"Atomistic Study of Acoustic Phonon Limited Mobility in Extremely Scaled Si and Ge Films","authors":"P. Rastogi, S. Bhowmick, A. Agarwal, Y. Chauhan","doi":"10.1109/CONECCT.2018.8482374","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482374","url":null,"abstract":"We explore the impact of Silicon (Si) and Germanium (Ge) thickness scaling (from 1 to 5 nm) on their electronic and transport properties using density functional theory. We find that in Ge, the lowest conduction band valley shifts from L in bulk to X in ultrathin slabs, and at 1 nm thickness Ge reduces to a direct band gap semiconductor. On the other hand, Si changes to a direct band-gap semiconductor in the thickness range of 1 to 5 nm, as opposed to its indirect nature in bulk form. We show that the electron-phonon coupling, which is the dominant scattering mechanism in these materials, is found to be very weak in scaled Ge-slabs as compared to Si-slabs. This in combination with drastically reduced longitudinal effective mass in thin Geslabs, leads to very high electron mobility in scaled Ge films, which increases with decreasing thickness. Our reported mobility trend in Ge-slabs is in agreement with the recently reported experimental results. For Si-slabs, we show that 3 nm is the most suitable thickness for future ultrathin Si devices as it has the lowest conduction band deformation potential and highest electron mobility.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116023143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimal Token Bucket Refilling for Tor network Tor网络的最优令牌桶填充
K. K, Ankit Rathore, V. B, P. D. Shenoy, V. R., Vignesh T Prabhu
{"title":"Optimal Token Bucket Refilling for Tor network","authors":"K. K, Ankit Rathore, V. B, P. D. Shenoy, V. R., Vignesh T Prabhu","doi":"10.1109/CONECCT.2018.8482389","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482389","url":null,"abstract":"The infrastructure of the Tor network is completely dependent on the relays voluntarily contributing their bandwidth for the community. Although the network provides a very high level of anonymity to the end user, it is designed such that the anonymity comes at the cost of very high latency. Hence, improving the performance of Tor network is always a very important aspect of the Tor project. Token Bucket algorithm is used in relays to ensure that the packets sent by clients are not lost and the bandwidth limits configured by the relay administrator is respected. In Token bucket algorithm, an important aspect is the Token Bucket Refill Interval which decides on how often the tokens are added to the bucket. In the Tor network, a default value of 100ms is used. This value is vindictive for a network where the majority of the clients are web clients with small download size. But as the bulk clients increase, it is important to understand how the value of Token Bucket Refill Interval impacts the performance of the network. In this paper, we continue on the previous work done to find the optimum value for Token Bucket Refill Interval for different scenarios of Tor network. Based on the simulations, we have found that download size of the clients is inversely related to the Token Bucket Refill Interval for the overall performance of the network. A larger value of Token Bucket Refill Interval gives a much better performance in Tor network when download size is small. However, as the download size increases, lower values of Token Bucket Refill Interval show better performance in Tor network.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116615996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric 以高压氧化铝为栅介质的alin /GaN mishemt
S. Kanaga, Bhuvnesh Kushwah, Gourab Dutta, N. Dasgupta, A. DasGupta
{"title":"AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric","authors":"S. Kanaga, Bhuvnesh Kushwah, Gourab Dutta, N. Dasgupta, A. DasGupta","doi":"10.1109/CONECCT.2018.8482382","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482382","url":null,"abstract":"AlInN/GaN metal insulator semiconductor high electron mobility transistor (MIS-HEMT) with high pressure oxidized aluminium as gate dielectric is investigated in this paper. The fabricated MIS-HEMT shows more than six orders of reduction in the gate leakage current in reverse bias and more than three orders of reduction in forward bias compared to the reference HEMT devices also fabricated on same substrates. A maximum drain current of 750 mA/mm was achieved due to improvement in the gate swing for MIS- HEMT. The MIS-HEMT devices also showed good improvement in the subthreshold slope and ID,ON/ID,OFF ratio compared to HEMT devices.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122678506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
3D Modeling based Performance Analysis of Gate Engineered Trigate SON TFET with SiO2/HfO2 stacked gate oxide 基于3D建模的SiO2/HfO2堆叠栅极氧化物晶体管性能分析
Priyanka Saha, S. Sarkhel, Pritha Banerjee, S. Sarkar
{"title":"3D Modeling based Performance Analysis of Gate Engineered Trigate SON TFET with SiO2/HfO2 stacked gate oxide","authors":"Priyanka Saha, S. Sarkhel, Pritha Banerjee, S. Sarkar","doi":"10.1109/CONECCT.2018.8482379","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482379","url":null,"abstract":"This paper aims to develop a physics based 3Danalytical modeling of potential prof ile and electric field distribution of a newly proposed dual material trigate (DMTG) Silicon On Nothing (SON) TFET with SiO2/HfO2 stacked gate oxide to reap the dual benefits of gate material and dielectric engineering techniques. Based on the derived electric field, drain current is obtained using Kane’s tunneling model. An overall comparative performance analysis of the present structure is done to establish the functional efficiency of the model over its SMTG equivalent in terms of surface potential, electric field, ON current and ambipolar conduction. The analytical results obtained are verified with 3DATLAS device simulator data to substantiate the accuracy of the derived model.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126759031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Augmenting IoT-based Systems with Intelligence 用智能增强物联网系统
Abin M Abraham, N. Kulkarni, Nikhil Clement, Lakshmeesha Bhat, Nikita Misale, Thwaha Hussain, S. Mohalik, Badrinath Ramamurthy
{"title":"Augmenting IoT-based Systems with Intelligence","authors":"Abin M Abraham, N. Kulkarni, Nikhil Clement, Lakshmeesha Bhat, Nikita Misale, Thwaha Hussain, S. Mohalik, Badrinath Ramamurthy","doi":"10.1109/CONECCT.2018.8482372","DOIUrl":"https://doi.org/10.1109/CONECCT.2018.8482372","url":null,"abstract":"As IoT devices proliferate, platforms and programming environments to develop IoT-based systems are becoming commonplace. However, the current models of development will soon prove to be inadequate due to the exploding scale, variety and dynamism in the IoT ecosystems, which is making it imperative that these systems manage and operate themselves in an autonomous fashion. Specifically, IoT-based systems must be able to adapt themselves intelligently to changes in the device hardware and software, the context and context-dependent policies and continue delivering to the requirements. Unfortunately, current IoT platforms and programming environments do not have any native support for such intelligence. In order to address this lacuna, we suggest additional components and APIs that can support intelligent autonomy based on the MAPE-K (Monitor, Analyze, Plan, Execute, Knowledge) architecture. The solution is demonstrated through a couple of concrete case studies implemented using IoT sensors and actuators on Raspberry Pi boards, openHAB - a popular IoT automation environment, Metric-FF - a well-known search-based AI planner and Leshan, an LwM2M platform for providing the sensing and actuation interfaces of the IoT devices.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132755935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信