包含背偏效应的FDSOI mosfet闪烁噪声统一模型

2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) Pub Date : 2018-03-16 DOI:10.1109/CONECCT.2018.8482376

P. Kushwaha, H. Agarwal, Chetan Kumar Dabhi, Yen-Kai Lin, J. Duarte, C. Hu, Y. Chauhan

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引用次数: 5

摘要

提出了一种基于物理的FDSOI晶体管闪烁噪声统一模型。利用氧化阱诱导载流子数(CNF)和相关表面迁移率波动(CMF)机制计算了前后界面的闪烁噪声功率谱密度(PSD)。该模型预测了宽电压范围内从弱反转区到强反转区的闪烁噪声行为。该模型计算效率高，可用于任何SPICE模型的电路仿真。

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A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect

A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations.

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来源期刊

2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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