Diameter Scaling in III-V Gate-All-Around Transistor for Different Cross-Sections

Abstract

We explore the impact of channel area scaling in InGaAs gate-all-around transistor for circular (CNW), square (SNW) and triangular (TNW) cross-sections using coupled selfconsistent Schrodinger-Poisson solver. We find that, among all three cross-sections, TNW shows the strongest confinement effect for all the considered dimensions. The confinement effects are significant at 10 nm for TNW and at 5 nm for SNW and CNW. We further analyzed the performance figure of merits (threshold voltage, current ON/OFF ratio, sub-threshold slope, ON current and intrinsic delay with cross-section area scaling) for all three cross-sections. Based on the scaling trend we find that CNW with 10 nm diameter is the most optimum among all three crosssections.