Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.最新文献

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High-efficiency, 0.79 M/sup 2/ tandem a-Si modules fabricated by a batch process 高效,0.79 M/sup / /串联a- si模块的批量生产工艺
N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri
{"title":"High-efficiency, 0.79 M/sup 2/ tandem a-Si modules fabricated by a batch process","authors":"N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri","doi":"10.1109/PVSC.2005.1488443","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488443","url":null,"abstract":"In this work, we've successfully developed the high efficiency, 0.79 m/sup 2/ a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV's production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115617522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photovoltaically powered modulating retroreflector optical data links 光伏发电调制后向反射器光学数据链
R. Walters, J. Warner, G. Summers, G. C. Gilbreath, J.L. Murphy, W. Rabinovich, S. Messenger, J. Lorentzen, D. Wilt, M. Krasowski, P. Jenkins, M.A. Smith
{"title":"Photovoltaically powered modulating retroreflector optical data links","authors":"R. Walters, J. Warner, G. Summers, G. C. Gilbreath, J.L. Murphy, W. Rabinovich, S. Messenger, J. Lorentzen, D. Wilt, M. Krasowski, P. Jenkins, M.A. Smith","doi":"10.1109/PVSC.2005.1488237","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488237","url":null,"abstract":"The development of a photovoltaically (PV) powered, laser communication system that constitutes a miniature, highly energy-efficient wireless communication technology is described. The technology is based on the direct integration of a multi-quantum well (MQW) modulating retroreflector (MRR) optical communication node and a monolithically integrated module (MIM) PV power source. The MQW MRR optical data link exploits the shift in the MQW absorption peak under an applied reverse bias to modulate incident laser light enabling binary encoding of data for transfer. A MIM consists of many individual solar cells monolithically integrated on a single substrate and offers the design versatility necessary to allow efficient electrical conversion of both incident sunlight and the system laser-light and the ability to match the voltage output to the MRR requirements. A description of the development of the MRR and MIM components of the system along with the power management and distribution circuitry is given. Results of bench-top demonstrations of the operational system are presented.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125207129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multijunction solar cells with subcell materials highly lattice-mismatched to germanium 与锗晶格高度不匹配的亚电池材料多结太阳能电池
D. Law, C. Fetzer, R. King, P. Colter, H. Yoon, T. Isshiki, K. Edmondson, M. Haddad, N. Karam
{"title":"Multijunction solar cells with subcell materials highly lattice-mismatched to germanium","authors":"D. Law, C. Fetzer, R. King, P. Colter, H. Yoon, T. Isshiki, K. Edmondson, M. Haddad, N. Karam","doi":"10.1109/PVSC.2005.1488196","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488196","url":null,"abstract":"The performance of a series of metamorphic GaInP and GaInAs solar cells grown on Ge with lattice-mismatch ranging from 0% to 2.4% is reported, with emphasis on device structures with 0.5% and 1.6% mismatch. Dual-junction cells with moderately lattice-mismatched (0.2% and 0.5%) structures have already reached electrical performance comparable to lattice-matched devices, at about 26% efficiency under AM0, 1-sun condition. Development efforts to date on highly lattice-mismatched (1.6% mismatch) structures have resulted in 22.6% efficiency dual-junction cells, with many improvements still possible. Spectral response measurements reveal excellent quantum efficiency (QE) for metamorphic GaInP and GaInAs materials, with a measured internal QE of over 90%. The offsets between the bandgap voltage (E/sub g//q) and the open-circuit voltage (V/sub OC/) of GaInP and GaInAs metamorphic cells were kept below 550 mV and 450 mV, respectively. Experimental results indicate that lattice-mismatched GalnP/GalnAs dual-junction cells can achieve higher energy conversion efficiency than lattice-matched GaInP/GaInAs dual-junction solar cells.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116803799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Spectroscopic ellipsometry and atomic force microscopy studies of RF sputtered Cd/sub 1-x/Mn/sub x/Te films RF溅射Cd/sub - 1-x/Mn/sub -x/ Te薄膜的椭偏光谱和原子力显微镜研究
Shanli Wang, Jian Li, Jie Chen, R. Collins, A. Compaan
{"title":"Spectroscopic ellipsometry and atomic force microscopy studies of RF sputtered Cd/sub 1-x/Mn/sub x/Te films","authors":"Shanli Wang, Jian Li, Jie Chen, R. Collins, A. Compaan","doi":"10.1109/PVSC.2005.1488174","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488174","url":null,"abstract":"Automatic spectroscopic ellipsometry (SE) with a 0.75 - 6.5 eV photon energy range was used together with atomic force microscopy to investigate surface optical and structural characteristics of as-deposited, annealed, and chloride treated Cd/sub 1-x/Mn/sub x/Te thin films. The E/sub 1/, E/sub 1/ + /spl Delta//sub 1/, and E/sub 2/ critical-point structures were clearly observed in the SE data for as-deposited samples. The variation of the pseudodielectric function for as-deposited samples was observed under different surface preparation and measurement conditions by in situ SE. The AFM images of the corresponding as-deposited samples revealed variations in surface morphology that were consistent with the SE results. For chloride treated samples, the pseudodielectric function was much different from that of as-deposited samples. This difference was due not only to oxidation of the surface, but also to a disruptive change of the bulk film under such annealing conditions.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116955197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Critical issues in vapor deposition of Cu(InGa)Se/sub 2/ on polymer web: source spitting and back contact cracking Cu(InGa)Se/sub / 2/在聚合物网上气相沉积的关键问题:源吐液和背接触开裂
E. Eser, S. Fields, G. Hanket, R. Birkmire, J. Doody
{"title":"Critical issues in vapor deposition of Cu(InGa)Se/sub 2/ on polymer web: source spitting and back contact cracking","authors":"E. Eser, S. Fields, G. Hanket, R. Birkmire, J. Doody","doi":"10.1109/PVSC.2005.1488183","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488183","url":null,"abstract":"This paper presents solutions to two critical problems encountered during the physical vapor deposition of Cu(InGa)Se/sub 2/ films on Mo coated polymer web in a roll-to-roll reactor. Spitting out of the Cu source, resulting in Cu-rich particles imbedded in the growing films and causing shorts in the devices, has been eliminated by changing the shape of the effusion nozzles. Sources having conical nozzles eliminated the spitting by reducing the temperature gradient along the nozzle. Heavy cracking of the Mo back contact film during the deposition of the Cu(InGa)Se/sub 2/ films has been found to be related to the reaction of Mo with Se in the reactor. Introducing an appropriate amount of oxygen into the Mo film eliminated the cracking by reducing the reactivity of the film to Se.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117351904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Photogrammetric estimation of shading impacts on photovoltaic systems 光伏系统遮阳影响的摄影测量估计
S. Ike, K. Kurokawa
{"title":"Photogrammetric estimation of shading impacts on photovoltaic systems","authors":"S. Ike, K. Kurokawa","doi":"10.1109/PVSC.2005.1488500","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488500","url":null,"abstract":"In order to decide the place to install a PV system and to estimate its performance, it is important to consider the effect of shadows on the PV array before and after PV system comes into operation. However, the shading effect cannot be evaluated easily on site because the position of obstacles surrounding the PV system is difficult to specify. Therefore, this paper is intended to develop new software for estimating the position of obstacles and their shadow by using the triangulation with two photographs or more.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121014407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Characterization of thin film cadmium sulfide grown using a modified chemical bath deposition process 改性化学浴沉积法制备硫化镉薄膜的研究
M. Archbold, D. Halliday, K. Durose, T. Hase, D. Smyth‐Boyle, K. Govender
{"title":"Characterization of thin film cadmium sulfide grown using a modified chemical bath deposition process","authors":"M. Archbold, D. Halliday, K. Durose, T. Hase, D. Smyth‐Boyle, K. Govender","doi":"10.1109/PVSC.2005.1488173","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488173","url":null,"abstract":"Cadmium sulfide polycrystalline films with potential for application as a solar cell window layer have been grown by a modified chemical bath deposition process, using ethylenediamine as a complexing agent and employing direct heating of the substrate. Films have been characterized using atomic force microscopy, scanning electron microscopy, grazing incidence X-ray diffraction, photoluminescence, photoconductivity, and optical absorption. Both as-grown films and films processed by annealing using cadmium chloride (CdCl/sub 2/) exhibit promising properties for this use. As-grown films are crystalline, possess low surface roughness (4.4 nm RMS), small grain size (18 nm), large direct bandgap (2.54 eV) and are highly textured with some degree of hexagonal phase present. On annealing with CdCl/sub 2/ there is an increase in surface roughness (24.5 nm RMS), modest grain growth (23 nm), a decrease in bandgap (2.44 eV) and diffraction data are consistent with increasing hexagonal character. There is also evidence of better crystalline quality and a large reduction in electron trapping states upon CdCl/sub 2/ annealing.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121080940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Estimation system of in-plane irradiance by regression functions of in-plane/horizontal irradiance ratio vs. time 平面内/水平辐照度比随时间的回归函数估计系统
T. Takashima, T. Koyanagi, K. Otani, K. Kato
{"title":"Estimation system of in-plane irradiance by regression functions of in-plane/horizontal irradiance ratio vs. time","authors":"T. Takashima, T. Koyanagi, K. Otani, K. Kato","doi":"10.1109/PVSC.2005.1488474","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488474","url":null,"abstract":"Photovoltaic (PV) system performance evaluations are required at the system deliveries to users. For the performance evaluations, it is very important to estimate the irradiance on the modules of PV system to design energy system or to check the energy output on-site. In this paper, we propose the estimation system of in-plane irradiance by regression functions from measured irradiance data. The system consists of the monthly regression functions R(t) of the minutely ratio of in-plane and global irradiance separated by clearness ratio. The data in three years for 100 residential PV sites in Japan were used to calculate and analyze the regression coefficients of these sites.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127114246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study of deep electronic states in CdTe solar cells through the detection and DLTS treatment of slow transients 通过慢瞬态检测和DLTS处理研究CdTe太阳能电池的深层电子态
F. Seymour, V. Kaydanov, T. Ohno
{"title":"Study of deep electronic states in CdTe solar cells through the detection and DLTS treatment of slow transients","authors":"F. Seymour, V. Kaydanov, T. Ohno","doi":"10.1109/PVSC.2005.1488122","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488122","url":null,"abstract":"We have designed and built a temperature controlled sample stage with automated data acquisition software to detect and study thin film solar cell deep electronic states (DES) with capacitance transients (CTr) that have characteristic times ranging from seconds to hours. Our studies on thin film CdTe solar cells regularly detect DES with concentrations exceeding the doping level and with characteristic times in the tens to hundreds of seconds at room temperature. An example is given of how this high concentration of DES with slow characteristic times can provide misleading C-V profile measurements. Also described are preliminary observations of Meyer-Neldel rule behavior and DLTS analysis of CdTe cells with and without copper and CdCl/sub 2/ treatment.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127118244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Signature of intermediate band materials from luminescence measurements 发光测量中中间波段材料的特征
N. Ekins‐Daukes, Christiana Honsberg, M. Yamaguchi
{"title":"Signature of intermediate band materials from luminescence measurements","authors":"N. Ekins‐Daukes, Christiana Honsberg, M. Yamaguchi","doi":"10.1109/PVSC.2005.1488066","DOIUrl":"https://doi.org/10.1109/PVSC.2005.1488066","url":null,"abstract":"The intermediate band concept for photovoltaic power conversion promises a remarkable efficiency increase over conventional solar cells and relies on the existence of an electrically isolated intermediate band located between the conduction and valance bands. By identifying the luminescence signature of an intermediate band material, a characterization technique is described that can determine whether the required optically active intermediate band exists in electrical isolation in the material. The technique will help researchers identify promising intermediate band materials and further optimize their properties, without having to fabricate highly efficient photovoltaic devices.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127224070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
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