N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri
{"title":"高效,0.79 M/sup / /串联a- si模块的批量生产工艺","authors":"N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri","doi":"10.1109/PVSC.2005.1488443","DOIUrl":null,"url":null,"abstract":"In this work, we've successfully developed the high efficiency, 0.79 m/sup 2/ a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV's production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-efficiency, 0.79 M/sup 2/ tandem a-Si modules fabricated by a batch process\",\"authors\":\"N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri\",\"doi\":\"10.1109/PVSC.2005.1488443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we've successfully developed the high efficiency, 0.79 m/sup 2/ a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV's production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.\",\"PeriodicalId\":430266,\"journal\":{\"name\":\"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2005.1488443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2005.1488443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在这项工作中,我们在泰国曼谷太阳能有限公司的EPV生产线上成功开发了高效,0.79 m/sup 2/ a- si /a- si串联模块,平均稳定功率为50瓦。胶片一次沉积在48块玻璃上。这可以首次通过使用微晶n层来实现,以获得更好的界面接触和更低的吸收。2)室温沉积ZnO/AI背电极。3)高质量的p/i接口层。此外,我们还可以通过在p/i界面引入p层沉积后的处理来降低硼的交叉污染,从而成功地将电池的制造时间缩短约40%。
High-efficiency, 0.79 M/sup 2/ tandem a-Si modules fabricated by a batch process
In this work, we've successfully developed the high efficiency, 0.79 m/sup 2/ a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV's production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.