N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri
{"title":"High-efficiency, 0.79 M/sup 2/ tandem a-Si modules fabricated by a batch process","authors":"N. Pingate, K. Sriprapa, P. Sichanugrist, N. Chetsiri","doi":"10.1109/PVSC.2005.1488443","DOIUrl":null,"url":null,"abstract":"In this work, we've successfully developed the high efficiency, 0.79 m/sup 2/ a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV's production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.","PeriodicalId":430266,"journal":{"name":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2005.1488443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we've successfully developed the high efficiency, 0.79 m/sup 2/ a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV's production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.