Proceedings of the Workshop on Low Temperature Semiconductor Electronics,最新文献

The effect of the vertical electric field on freeze-out in MOS-structures 垂直电场对mos结构冻结的影响

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50178

S. Voges, M. du Plessis

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引用次数: 1

The extraction of electrical parameters for MOSFETs with applications to low temperature 应用于低温的mosfet的电参数提取

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50182

J. L. Hill, R. Anderson

引用次数: 4

Hot-carrier degradation of LDD n-channel MOSFETs at 77 K 77 K下LDD n沟道mosfet的热载流子退化

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50193

S. Titcomb, K. T. Paskiet, A.E. Grass

引用次数: 1

A two-dimensional model for the kink in nMOSTs operating at liquid helium temperatures 在液氦温度下运行的nmost中扭结的二维模型

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50195

E. Simeon, L. Deferm, C. Claeys

引用次数: 5

A numerical study of the temperature dependence of the unity gain frequency of silicon bipolar transistors 硅双极晶体管单位增益频率温度依赖性的数值研究

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50177

M. Chrzanowska-Jeske, R. Jaeger

引用次数: 1

The multistable charge controlled memory effect in SOI-transistors at low temperatures 低温下soi晶体管的多稳定电荷控制记忆效应

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50198

M. Tack, M. Gao, C. Claeys, G. Declerck

引用次数: 0

Operation of GaAs MESFETs at cryogenic temperatures 低温下GaAs mesfet的工作

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50175

C. Liang, H. Wong, N. Cheung

引用次数: 2

Comparison of carrier velocity in 0.25 mu m gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K 在300 K和77 K下，0.25 μ m栅极长度的常规、伪晶和晶格匹配调制掺杂场效应管载流子速度的比较

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50174

S. Fu, S. Liu, M. B. Das, P. Chao, K. Duh, P. Ho, J. Ballingall

引用次数: 4

Characterization and modelling of Si MOSFETs at liquid helium temperature 液氦温度下硅mosfet的表征和建模

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50180

F. Balestra, I.M. Hafex, G. Ghibaudo

引用次数: 1

CMOS operation below freezeout CMOS操作低于冻结

Proceedings of the Workshop on Low Temperature Semiconductor Electronics, Pub Date : 1989-08-07 DOI: 10.1109/LTSE.1989.50179

S. Broadbent

引用次数: 8