发布求助
文献互助 智能选刊 最新文献

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

筛选
英文 中文
Factorial designs of multi-coatings for induced stresses of advanced flexible displays 先进柔性显示器诱导应力复合涂层的析因设计
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543621
Chang-Chun Lee
{"title":"Factorial designs of multi-coatings for induced stresses of advanced flexible displays","authors":"Chang-Chun Lee","doi":"10.1109/AM-FPD.2016.7543621","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543621","url":null,"abstract":"Fatigue behavior of multi-stacked films type OLED devices under a flexural load been greatly paid attention while the requirement of thinner and more flexible packaging structure. To enhance mechanical reliability of related critical components utilized in foregoing OLED architecture, a mechanical model of multi-layers structure is demonstrated and validated by nonlinear finite element analysis, exploring the impact of several concerned mechanical parameters within a whole OLED packaging. The results indicated that the thickness of PI substrate is a significant parameter to determine the bending stress of indium tin oxide film. It is found that the use of thicker and softer film could be able to reduce the stress of ITO conductive film.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116066549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physics-based modeling of gate-leakage current in AlGaN/GaN high electron mobility transistors AlGaN/GaN高电子迁移率晶体管栅漏电流的物理建模
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543649
Xiaoyu Ma, Fei Yu, W. Deng, Junkai Huang
{"title":"Physics-based modeling of gate-leakage current in AlGaN/GaN high electron mobility transistors","authors":"Xiaoyu Ma, Fei Yu, W. Deng, Junkai Huang","doi":"10.1109/AM-FPD.2016.7543649","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543649","url":null,"abstract":"Gate-leakage currents AlGaN/GaN high electron mobility transistors (HEMTs) have been studied. The reverse bias gate-leakage current is decomposed into three dominant components, namely, Fowler-Nordheim tunneling, trap-assisted-tunneling, and trap-assisted Frenkel-Poole emission. A physics-based model to calculate this current is given, which follows the experimental gate-leakage current characteristics closely over a wide range of bias and temperature.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"287 19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122914429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interface engineering for improving the electrical stability and photoelectric effects of organic memory transistors 提高有机存储晶体管电稳定性和光电效应的接口工程
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543651
Yu-Fu Wang, Sheng-Kuang Peng, Po-Kang Huang, Horng-Long Chen, W. Choua
{"title":"Interface engineering for improving the electrical stability and photoelectric effects of organic memory transistors","authors":"Yu-Fu Wang, Sheng-Kuang Peng, Po-Kang Huang, Horng-Long Chen, W. Choua","doi":"10.1109/AM-FPD.2016.7543651","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543651","url":null,"abstract":"In recent years, the electrical stability of organic devices is an essential issue in application of large integrated circuits. The properties of interface between semiconductor layer and dielectric layer play an important role to determine the electrical performance and memory effect of organic field-effect transistors. We propose some facile ways, in which the interface property could be modified, to overcome the stable issue. The electrical stability and photoelectric effect of organic transistors were successfully enhanced by using these interface engineering.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133436749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f Noise characteristics of P-channel tin monoxide thin-film transistors 1/f p沟道氧化锡薄膜晶体管的噪声特性
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543645
Chan-Yong Jeong, Hee-Joong Kim, Jeong-Hwan Lee, S. Bae, H. Kwon
{"title":"1/f Noise characteristics of P-channel tin monoxide thin-film transistors","authors":"Chan-Yong Jeong, Hee-Joong Kim, Jeong-Hwan Lee, S. Bae, H. Kwon","doi":"10.1109/AM-FPD.2016.7543645","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543645","url":null,"abstract":"In this work, we investigate the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2 × 1021 eV-1cm-3, which is about one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor 在金属氧化物薄膜晶体管上沉积应变P(VDF-TrFE)的多功能触摸传感器
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543668
Taiyu Jin, Jeongjae Ryu, Hansaem Kang, K. No, S. Park
{"title":"Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor","authors":"Taiyu Jin, Jeongjae Ryu, Hansaem Kang, K. No, S. Park","doi":"10.1109/AM-FPD.2016.7543668","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543668","url":null,"abstract":"A novel pressure sensor based on indium gallium zinc oxide (IGZO) oxide TFT and strained piezoelectric polymer is demonstrated. Poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) is used as an organic piezoelectric material. The sensor demonstrate the possibility to be further used as a display polarizing film though a birefringence property showed by stretching the P(VDF-TrFE) film. Finally, the sensor shows a high stable and uniform signal to the pressure.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131908184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics 柔性电子用铝诱导低温结晶法在绝缘子上制备大晶粒掺锡Ge (100)
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543662
M. Sasaki, M. Miyao, T. Sadoh
{"title":"Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics","authors":"M. Sasaki, M. Miyao, T. Sadoh","doi":"10.1109/AM-FPD.2016.7543662","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543662","url":null,"abstract":"A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130900262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of the infrared-ray sensors using poly-Si TFTs 多晶硅tft红外传感器的评价
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543653
Katsuya Kite, Shuhei Kitajima, T. Matsuda, M. Kimura, Mitsuo Tamura, Masahide Inoue
{"title":"Evaluation of the infrared-ray sensors using poly-Si TFTs","authors":"Katsuya Kite, Shuhei Kitajima, T. Matsuda, M. Kimura, Mitsuo Tamura, Masahide Inoue","doi":"10.1109/AM-FPD.2016.7543653","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543653","url":null,"abstract":"We have evaluated light and temperature dependences of transistor characteristics in n-type, p-type and pin-type poly-Si TFTs with and without infrared (IR) light illumination. It is found that light and temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, we confirmed that the light dependences with IR light illumination are much larger than the temperature dependences. Based on these results, we proposed three detection systems to proximity sense by the IR sensors using poly-Si TFTs.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114861909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characteristic evaluation of photo-induced current by infrared light irradiation in low-temperature poly-Si TFT 低温多晶硅TFT中红外光辐照光感应电流特性评价
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543654
Shuhei Kitajima, Katsuya Kito, T. Matsuda, M. Kimura, Masahide Inoue
{"title":"Characteristic evaluation of photo-induced current by infrared light irradiation in low-temperature poly-Si TFT","authors":"Shuhei Kitajima, Katsuya Kito, T. Matsuda, M. Kimura, Masahide Inoue","doi":"10.1109/AM-FPD.2016.7543654","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543654","url":null,"abstract":"We confirmed that photo-induced current in off region changes when we irradiate infrared light to N-type, P-type and PIN-type low-temperature poly-Si TFTs. In addition, we found that the photo-induced current is proportional to the gate width, whereas it does not depend on the gate length. We can indicate that it is possible to detect infrared light above certain intensity from the relationship between the photo-induced current and the dark current.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124717661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Graphene field-effect transistor for biosensor 生物传感器用石墨烯场效应晶体管
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543613
K. Matsumoto, R. Hayashi, Y. Kanai, Koichi Inoue, T. Ono
{"title":"Graphene field-effect transistor for biosensor","authors":"K. Matsumoto, R. Hayashi, Y. Kanai, Koichi Inoue, T. Ono","doi":"10.1109/AM-FPD.2016.7543613","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543613","url":null,"abstract":"The sugar chain modified grapheme FET was applied to selectively detect the human type influenza virus and bird type influenza virus. Instead of the real virus, the pseud virus such as Lectin was used for the experiment for the safety. The human type pseud virus selectively reacts with the human type sugar chain which was modified on the grapheme surface and vise versa.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124898796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Single-walled carbon nanotubes (SWNTs); history and future prospects for electronic applications 单壁碳纳米管;电子应用的历史与未来展望
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543611
S. Jin
{"title":"Single-walled carbon nanotubes (SWNTs); history and future prospects for electronic applications","authors":"S. Jin","doi":"10.1109/AM-FPD.2016.7543611","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543611","url":null,"abstract":"For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense, among a variety of candidates beyond silicon, single walled carbon nanotubes (SWNTs) has been regarded as one of viable options because of ideal electrostatic coupling coming from one dimensional structure, the ability to operate at low voltages, and their exceptional electrical-performance in devices less than 10 nm. However, the road to producing transistors from single-walled carbon nanotubes (SWNTs) has been hedged about heterogeneous electrical properties (i.e., semiconducting vs. metallic) and controllably positioning these tiny molecular cylinders (~1 nm diameter). To address this issue, one of the most fascinating methods has been reported as \"thermocapillarity enabled purification (TcEP)\" for obtaining arrays of highly purified semiconducting CNTs with its process scalability and compatibility with the state of the art Si technology. In this talk, we will overview key technologies of TcEP and address future aspects on electronic application based on pristine form of SWNTs after purification.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122857930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信