Interface engineering for improving the electrical stability and photoelectric effects of organic memory transistors

Abstract

In recent years, the electrical stability of organic devices is an essential issue in application of large integrated circuits. The properties of interface between semiconductor layer and dielectric layer play an important role to determine the electrical performance and memory effect of organic field-effect transistors. We propose some facile ways, in which the interface property could be modified, to overcome the stable issue. The electrical stability and photoelectric effect of organic transistors were successfully enhanced by using these interface engineering.