多晶硅tft红外传感器的评价

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543653

Katsuya Kite, Shuhei Kitajima, T. Matsuda, M. Kimura, Mitsuo Tamura, Masahide Inoue

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引用次数: 1

摘要

我们评估了n型、p型和引脚型多晶硅tft在有和没有红外(IR)光照射下晶体管特性的光和温度依赖性。研究发现，在n型和p型tft中，关漏电流对光和温度的依赖性远大于通漏电流。此外，我们证实了红外光照明的光依赖性远远大于温度依赖性。基于这些结果，我们提出了三种利用多晶硅tft的红外传感器进行近距离传感的检测系统。

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Evaluation of the infrared-ray sensors using poly-Si TFTs

We have evaluated light and temperature dependences of transistor characteristics in n-type, p-type and pin-type poly-Si TFTs with and without infrared (IR) light illumination. It is found that light and temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, we confirmed that the light dependences with IR light illumination are much larger than the temperature dependences. Based on these results, we proposed three detection systems to proximity sense by the IR sensors using poly-Si TFTs.

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来源期刊

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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