{"title":"Comparison of the spin transfer torque efficiencies with three terminal spin-torque oscillators (Conference Presentation)","authors":"E. Jué","doi":"10.1117/12.2530578","DOIUrl":"https://doi.org/10.1117/12.2530578","url":null,"abstract":"","PeriodicalId":420411,"journal":{"name":"Spintronics XII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133811631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Brückl, Herbert Weitensfelder, Armin Satz, K. Pruegl, S. Luber, W. Raberg, J. Zimmer, D. Suess
{"title":"Magnetic vortex state applied in magnetoresistive sensors (Conference Presentation)","authors":"H. Brückl, Herbert Weitensfelder, Armin Satz, K. Pruegl, S. Luber, W. Raberg, J. Zimmer, D. Suess","doi":"10.1117/12.2525294","DOIUrl":"https://doi.org/10.1117/12.2525294","url":null,"abstract":"Magnetoresistive sensors based on giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) play a major role towards the miniaturization in the industrial society. Typically, spin-valve-type magnetoresistive sensors are embedded in a Wheatstone bridge configuration with rectangular, meander-like or elliptically shaped thin film elements. Such elements usually switch via multi-domain, C- or S-shaped magnetization states and, therefore, often exhibit an open non-linear hysteresis curve. Linearity and hysteretic effects are key features in the improvement of such sensors.\u0000We will present a different approach by using circularly shaped elements exhibiting a different magnetization state of a magnetic vortex [1]. This is one of the fundamental magnetization ground states occurring in disk-shaped thin film elements and is characterized by minimization of the demagnetizing energy at the expense of exchange energy.\u0000Experimental data were generated on electrically contacted GMR and TMR disks which were fabricated by optical lithography. The following advantages will be discussed and compared to standard elliptical sensor elements. (a) The vortex state shows essentially no hysteresis in the minor loop. (b) Since the vortex nucleation happens prior to the zero field, the M(H=0)=0 crossing is independent of history. (c) The critical fields can be easily controlled by the element geometry. (d) The noise is low.\u0000All characteristic experimental values have been determined in dependence of free layer thickness, disk diameter and temperature. These findings are discussed in the frame of the semi-analytical rigid-vortex-model [2] and micromagnetic simulations. \u0000The financial support by the Austrian Federal Ministry of Science, Research and Economy and the Christian Doppler Research Association in Austria is gratefully acknowledged.\u0000\u0000[1] D. Suess, A. Bachleitner-Hofmann, A. Satz, H. Weitensfelder, C. Vogler, F. Bruckner, C. Abert, K. Prugl, J. Zimmer, C. Huber, S. Luber, W. Raberg, T. Schrefl, H. Bruckl, „Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors with High Linear Range”, Nature Electronics 1, 362 (2018)\u0000[2] K. Y. Guslienko et al., “Magnetization reversal due to vortex nucleation, displacement, and annihilation in submicron ferromagnetic dot arrays”, Phys. Rev. B 65 (2001)","PeriodicalId":420411,"journal":{"name":"Spintronics XII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130514524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Recent progress in spin-LED: realization of pure circular polarization EL at room temperature with current density of 10 A/cm2 \u0000\u0000 (Conference Presentation)","authors":"N. Nishizawa, H. Munekata","doi":"10.1117/12.2527862","DOIUrl":"https://doi.org/10.1117/12.2527862","url":null,"abstract":"Electroluminescence with nearly pure circular polarization (CP) at room temperature (RT) together with electrical helicity control [1, 2] has been demonstrated by a lateral-type spin-polarized light emitting diodes (LT-spin-LEDs) consisting of AlGaAs/GaAs double-heterostructures and the crystalline AlOx (x-AlOx) tunneling barrier [3]. In this LT-spin-LED, relatively high current density of J > 100 A/cm2 was required to achieve the circular polarization of P ~ 0.95. Operation with J > 100 A/cm2, however, often resulted in irreversible breakdown and short-lived spin-LED. In order to suppress this breakdown, we have studied fabrication of LT-spin-LED devices incorporating x-AlOx/AlAs hybrid tunneling barriers. With AlAs layers that are inserted between the x-AlOx layer and a top n-GaAs layer of LT-spin-LED, we aim at reinforcing electrical robustness of x-AlOx layers that are formed by oxidation of Al epilayers at RT. Nearly pure CP emissions (~ 0.92) are obtained from LT-spin-LED devices with hybrid tunneling barriers at J ~ 10 A/cm2. To our surprise, current density for pure CP emission decreases to about one-tenth and the yield of device fabrication is significantly improved (~ 5 % -> ~ 67 %). It is supposed that growth of AlAs layers prior to the formation of x-AlOx layers gives rise to improvement of crystalline quality of x-AlOx layers in terms of suppression of defects in the oxide layer and/or those across x-AlOx/AlAs/n-GaAs interfaces. [1] N. Nishizawa et al., PNAS 114, 1783 (2017). [2] N. Nishizawa et al., APEX 11, 053003 (2018). [3] N. Nishizawa et al., JAP 114, 033507 (2013).","PeriodicalId":420411,"journal":{"name":"Spintronics XII","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121747621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}