Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)最新文献_第3页

Monte Carlo study of drain current noise in nano-scaled MOSFETs 纳米级mosfet漏极电流噪声的蒙特卡罗研究

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004065

V. Polyakov, F. Schwierz

引用次数: 0

Next Generation Lab-a solution for remote characterization of analog integrated circuits 下一代实验室-模拟集成电路远程表征的解决方案

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004081

C. Wulff, T. Ytterdal, T.A. Saethre, A. Skjelvan, T. Fjeldly, M. Shur

引用次数: 17

PL and CL emissions in thermal oxide and silicon rich oxide films implanted with silicon 注入硅的热氧化膜和富硅氧化膜中的PL和CL排放

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004061

F. F. Flores Gracia, M. Aceves, J. Carrillo, C. Domínguez, C. Falcony

引用次数: 0

A digital BIST for opamps embedded in mixed-signal circuits by analysing the transient response 基于瞬态响应分析的混合信号电路中放大器的数字BIST

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004077

J. Font-Rosselló, J. Ginard, E. Isern, M. Roca, E. Garcia

引用次数: 9

Sixth-order all-pass filters with OTAs and their characteristics 带ota的六阶全通滤波器及其特性

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004023

L. Matejicek, K. Vrba, T. Dostál

引用次数: 2

Applying device simulation for lifetime-controlled devices 在寿命控制器件中应用器件仿真

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004041

R. Siemieniec, W. Sudkamp, J. Lutz

引用次数: 7

Reliability improvement of photo voltaic power conversion systems by an optimal remote-management controller 通过优化远程管理控制器提高光电转换系统的可靠性

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004101

C. Cavallaro, A. Raciti, A. Torrisi, G. Chimento

引用次数: 6

Unified extraction method for amorphous and polycrystalline TFT above threshold model parameters 统一提取非晶和多晶TFT阈值以上模型参数的方法

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004027

M. Estrada, A. Cerdeira, A. Ortiz-Conde, F. García, B. Iñíguez

{"title":"Unified extraction method for amorphous and polycrystalline TFT above threshold model parameters","authors":"M. Estrada, A. Cerdeira, A. Ortiz-Conde, F. García, B. Iñíguez","doi":"10.1109/ICCDCS.2002.1004027","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004027","url":null,"abstract":"A unified procedure is presented to extract above-threshold model parameters in polysilicon and a-Si:H TFTs. It is based on the integration of the experimental data current, which has the advantage of reducing the effects of experimental noise. This method is applied to the linear and saturation regions for the above-threshold regime and allows the extraction of all the above-threshold parameters. We already presented a similar method applied to a-Si:H TFTs. In this work it is demonstrated that in the above-threshold regimen the mobility of polysilicon TFTs can be modeled also as a function of the gate voltage to the n power and a similar integration procedure can be used to extract the device modeling parameters. The unified extraction procedure provides in addition the possibility of monitoring the crystallization process of a-Si:H TFTs into polysilicon, which has become a widely used process of fabricating low temperature polysilicon TFTs. The process of polycrystallization manifests itself by a variation and change in sign of one of the model parameters. Extracted parameters can be introduced in AIMSpice circuit simulator for device modeling. The accuracy of the simulated curves using the extracted parameters is verified with measured.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128972649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Photoluminescence of porous silicon and porous polysilicon films 多孔硅和多孔多晶硅薄膜的光致发光

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004059

H. Wong, P. Han, M. Poon

{"title":"Photoluminescence of porous silicon and porous polysilicon films","authors":"H. Wong, P. Han, M. Poon","doi":"10.1109/ICCDCS.2002.1004059","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004059","url":null,"abstract":"We conducted a series of experiments on porous silicon (PS) and porous polysilicon (PPS) to investigate the origins of photoluminescence in these materials. A study of the effects of surface layer plasma etching, for several different durations, on the as-anodized samples was conducted. For the photoluminescence (PL) study, results show that the intensity decreases rapidly, but the peak locations remain fairly unchanged, as the surface etching proceeds. In addition, only one band centered at around 680 nm (1.82 eV) is found in the PS samples whereas two bands, centered at 400 nm (3.1 eV) and 680 nm, are found in the PPS samples. The 400 nm peak disappears when the surface oxide layer was completely removed. These results could not be explained with the quantum confinement model of silicon nano structures. We ascribe these PL effects to the radiative centers in the surface oxide layer. Fourier transform infrared (FTIR) measurements on these samples further reveal that the PL peak at 680 nm correlates well with the NBOHCs (non-bridged oxide hole centers or /spl equiv/-SiO/spl middot/) and the 3.1 eV peak can also be attributed to the oxygen vacancy (/spl equiv/Si-Si/spl equiv/) in the surface silicon oxide layer.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comparison of different control techniques for active filter applications 有源滤波器应用中不同控制技术的比较

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004097

S. Meo, A. Perfetto

引用次数: 49