注入硅的热氧化膜和富硅氧化膜中的PL和CL排放

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004061

F. F. Flores Gracia, M. Aceves, J. Carrillo, C. Domínguez, C. Falcony

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摘要

本文研究了硅注入氧化硅薄膜的光致发光(PL)和阴极致发光(CL)。研究了用LPCVD膜制备的热氧化物和富硅氧化物(SITO和SISRO)。结果表明，SISRO的辐射波长与SITO相同，但辐射强度更高。此外，研究表明，PL和CL波段不仅与薄膜的si过量有关。富硅氧化物的PL是迄今为止报道的最高的。结果表明，存在一个最佳退火时间以产生最高的发光强度。建议在这些材料中，允许的辐射应限制在1.4 ~ 3ev之间。

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PL and CL emissions in thermal oxide and silicon rich oxide films implanted with silicon

In this work, photoluminescence (PL) and cathodoluminescence (CL) of silicon oxide films implanted with silicon were investigated. Thermal oxide and silicon rich oxide obtained by LPCVD films and both implanted with silicon (SITO and SISRO) were studied. The results show that SISRO radiates in the same wavelength as SITO, but with higher intensity. In addition, it is shown that PL and CL bands are not only related to the Si-excess of the films. The PL of the silicon rich oxide is the highest reported to date. The results show that an optimum annealing time exists to produce the highest luminescence intensity. It is proposed that in these materials, the radiation allowed should be confined between 1.4 and 3 eV.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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