1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers最新文献

{"title":"Pulsed IMPATT diode oscillators above 200 GHz","authors":"C. Chao, R. Bernick, R. Ying, K. Weller, D. Lee, E. Nakaji","doi":"10.1109/ISSCC.1977.1155627","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155627","url":null,"abstract":"","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126180235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 5 V-only 4-K static RAM","authors":"V. McKenny","doi":"10.1109/ISSCC.1977.1155695","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155695","url":null,"abstract":"","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122411616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A bipolar monolithic analog subsystem for a 4½ digit A/D converter","authors":"K. Hareyama, K. Yoshimura, K. Murase","doi":"10.1109/ISSCC.1977.1155623","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155623","url":null,"abstract":"A HIGHLY ACCURATE A/D convcrter has been required in data handling systems for a microprocessor and in digital multimeters. Responding to this recent demand, a CMOS monolithic structure has been widely employed in combination with the dual slope technique’ 7’. The CMOS process, however, places a limitation on the resolution of an A(D converter at 3% digits. In the dual slope technique, on the other hand, a feedback loop is constructed between the analog and the digital subsystems. This arrangement degrades the electrical isolation between the two systems.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122949613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A precision slope polarity switch for a monolithic telephone- quality deltamodulator","authors":"J. Price, S. Kelley","doi":"10.1109/ISSCC.1977.1155670","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155670","url":null,"abstract":"","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121866655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic C2L/CMOS frequency synthesizer for CB","authors":"A. Dingwall","doi":"10.1109/ISSCC.1977.1155645","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155645","url":null,"abstract":"A MONOLITHIC PHASE-LOCKED LOOP frequency synthesizer for CB will be described. The chip, based on the high speed bulk C2L/CMOS self-aligned silicon-gate technology, is capable of synthesizing frequencies directly for the 40 CB channels in the 26.965-27.405 MHz band. Both high side injection frequencies (37.66-38.10MHz) and low side injection frequencies (16.27-16.71) for a 10.695 MHz intermediate frequency have been demonstrated with this device. Spectral purity, which depends on frequency, for synthesized frequencies is typically 75 dB a t 17 MHz and appears satisfactory for low cost CB transceivers, but is ultimately limited by cross talk on one chip. Studies which also have included an equivalent 2-chip system with the VCO in a separate package, demonstrated that 2-chips can give substantially higher spectral purity and synthesized bandwidth. The selection of a monolithic versus 2-chip system and the most favorable transceiver architecture provide an interesting set of cost versus performance and convenience tradeoffs.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116305280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fault tolerant 92160 bit multiphase CCD memory","authors":"B. Elmer, W. Tchon, A. Denboer, S. Kohyama, K. Hirabayashi, I. Nojima","doi":"10.1109/ISSCC.1977.1155685","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155685","url":null,"abstract":"technique in combination with laser burned fuses. During chip test, good and bad blocks are identified and the bad blocks are disconnected from the power supply by laser burned fuses. Each good block has its shorted address line fuse burned out which puts it in series with the othcr good blocks; Figure 2. No special masks are required. The good blocks are linked together by a serial addressing technique. In effect, thc linked blocks can be thought of as bit positions in a shift register such that if a “1” is inserted into the register, it can be shifted thru the register (blocks). Thus, to address a block, the “1” is shifted to the desired block and a common enable line is then activated. Data can then be written or read from the addressed block. Thus, at the system level, it is only necessary to guarantee a certain total number of good blocks to span the address range. No special method of block identification or bookkeeping of parts is required; this simplifies use.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116317817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analog NMOS sampled-data recursive filter","authors":"I. Young, David A. Hodges, Paul R. Gray","doi":"10.1109/ISSCC.1977.1155637","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155637","url":null,"abstract":"SINCE MOS TECHNOLOGY provides good switches and high quality capacitors, it is useful to reformulate old problems in a way that is amenable to solution by their use. The paper from 1977 shows that this concept extends even to filter synthesis. A conventional active filter depends on the time constants of RC products. This filter depends on an external reference frequency, which is well controlled (and adjustable to facilitate electronic tuning), and on capacitor matching (ratios accurate to the order of 0.1% are achieved in this paper). Several high-gain (2000), fast settling (8μs to 0.5%) operational amplifiers are demonstrated for the first time in this paper. Total integration and high performance have made the switched-capacitor filter a valuable functional block in modern communications systems.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133556079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impedance measurements at millimeter wave frequencies (54.2 GHz)","authors":"O. Petersen, C. Bradford, R. Cranmer","doi":"10.1109/ISSCC.1977.1155700","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155700","url":null,"abstract":"A WAVEGUIDE CIRCUIT (Figure 1) has been designed and constructed to measure impedance a t millimeter wave frequencies. To calculate the load impedance, known standards were used to characterize the network transformation between the p l y e of measurement and the load location. Measurements were performed at 54.2 GHz on specially fabricated loads and on mm-wave PIN diodes. A series of independent measurements were made to determine the relative phase and magnitude of the complex reflection coefficient of the load. Bolometer measurements at the output of the 3-dB coupler are essential to the circuit design. The phase was measured by the amount of cancellation which occurs when the reflected signal is fed into the 3-dB four-port directional coupler and compared to a reference signal fed into the other input port. The magnitude was measured by comparing the signal reflected from the load to that reflected by the reference short (waveguide switch #l) . During the latter measurement, the reference signal is terminated (waveguide switch #2).","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116901939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"What lies ahead for analog and digital monolithic ICs at microwave frequencies?","authors":"C. Liechti","doi":"10.1109/ISSCC.1977.1155704","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155704","url":null,"abstract":"In our increasingly digital world, there is a need for faster and faster data processing capability. New systems requiring gigabit data rates for measurement instrumentation, digital communication and radar signal processing are presently in the planning stage. A similar trend toward wider band operation exists for analog circuits such as A/D converters, sample and hold circuits, signal and operational amplifiers.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129606949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A single-chip, all bipolar, camera control IC","authors":"T. Frederiksen, W. Howard, D. Monticelli","doi":"10.1109/ISSCC.1977.1155649","DOIUrl":"https://doi.org/10.1109/ISSCC.1977.1155649","url":null,"abstract":"RECENT ADVANCES in silicon processing have made i t possible t o design a bipolar camera control IC, including the silicon photodiode, on a single chip; previous electronic camera control systems have used multiple chips or less desirable cadmium-sulphide, CdS, cells. This IC operates without external components and provides linear control of the shutter and two-position aperture selection in addition t o a low light warning and a battery check. Each die is calibrated during wafer sort using a reference light source by a computer controlled metal link blowing technique. The chip is mounted in an 8-pin DIL package, Figure 4, which is molded in a clear compound. A small recess is formed in the package t o allow a light filter to be convenientlyinserted, thereby reducing the infrared response. A second lay-er of aluminum is used on the die t o shield the low level control circuitry from the incident light. Current was used as the analog of scene brightness because of the dynamic range and compatibility with bipolar circuitry. Special processing was developed to provide a blue-enhanced photodiode and transistors with good hFE holdup to handle the low level currents. A shallow photodlode junction was created by use of ion implantation to boost the normalized conversion efficiency to 60% in the visible light range. Low temperature processing and anneals,provide typical NPN hFE s of 100 and PNP hFE s of 50 at 1OnA collector current, while simultaneouslyholding junction leakages t o less than 1pA at room temperature. The filtered scene illumination is linearly convertcd t o current in the photodiode. The input differential amplifier, Figure 2, biases this device and replicates the photocurrent in a multiplicity of outputs. For near zero leakage a bias of 0V is needed, but a requirement that the shutter time out in total darkness necessitated a circuit which encourages the diode t o provide some limited dark current. The diodes at the noninverting input arc fixed biased whereas those in series with the photodiode carry I), (-4nA/Fc). Should I x 0, the latter diodes have n o voltage drop and the photodiode would approach a 1 V reverse bias. This stimulates leakage currcnt which increases the diode drops and tends to minimize and thereby regulate the leakage. Photodiode current, whether thermal or light induced, is provided by the upper PNPs through the action of the loop. The Ib of the NPN at the inverting input represents an error source which is reduced to less than 1% by adaptively biasing the tail current of the differential amplifier. This light dependent biasing technique improves the transient response of the loop, which is necessary .to realize proper exposure time when light is returned from a flash-illuminated subject; earlier cameras, which used the slower CdS cell, could not respond to this rqturncd light and would therefore produce an overexposed picture. Sufficient loop gain is provided t o insure linearity over the incident light range of in","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123725361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}