D. Levi, B. Fluegel, R. Ahrenkiel, A. Compaan, L. Woods
{"title":"Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films","authors":"D. Levi, B. Fluegel, R. Ahrenkiel, A. Compaan, L. Woods","doi":"10.1109/PVSC.1996.564277","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564277","url":null,"abstract":"Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. We utilize the complimentary techniques of femtosecond time-resolved differential absorption (TRDA) and picosecond time-resolved photoluminescence (TRPL) to determine the relaxation and recombination mechanisms in these films. Comparison between samples with systematic variations in their CdS layers leads to several conclusions. Photoexcited holes are very rapidly captured by deep traps where they remain until recombining with electrons in shallow traps. The hole trapping states are most likely produced by tellurium substituting for sulfur in the CdS lattice. We postulate that reduction of tellurium diffusion into CdS during growth may increase the spectral response of CdTe/CdS solar cells for photon energies above 2.5 eV by reducing or eliminating these defect sites.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117050640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Andreev, V. Lantratov, V. Larionov, V. Rumyantsev, M. Shvarts
{"title":"Development of PV receivers for space line-focus concentrator modules","authors":"V. Andreev, V. Lantratov, V. Larionov, V. Rumyantsev, M. Shvarts","doi":"10.1109/PVSC.1996.564015","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564015","url":null,"abstract":"A practical design has been developed for string-type PV receivers intended to operate in space application line-focus concentrator modules. MOCVD grown AlGaAs/GaAs solar cells are used in these receivers as the main elements whereas Zn-diffused GaSb solar cells are used in tandem to improve total efficiency. Secondary cylindrical lenses operating similar to a \"large scale prismatic cover\" and transforming a focal light line into separated spots are introduced on the surfaces of solar cells. Efficiency 18.3% (AM0, 15 Suns, RT) has been measured on the receiver 72 mm long constructed from twelve series-connected AlGaAs/GaAs solar cells.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117252735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of the GaAs solar cell for space application","authors":"Chen Mingbo, Zhang Zhongwei","doi":"10.1109/PVSC.1996.563962","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563962","url":null,"abstract":"To meet the requirements of space power use, the authors developed a new multiwafer LPE technique. This technique applied a squeezing multiwafer graphite boat, with 50 wafers (2.3/spl times/2.3 cm/sup 2/) or 20 wafers (2.3/spl times/ 4.3 cm/sup 2/) produced at each epitaxial growth. They focused on the control technique for the epitaxial layers' parameters. Experimental results demonstrated that epitaxial growth at low temperature could produce ideal GaAs solar cells with good repeatability. To date, the efficiencies of GaAs solar cells prepared by this technique have reached 18.6% (2/spl times/2 cm/sup 2/, AMO) and 18.39% (2/spl times/4 cm/sup 2/, AMO), respectively. Average efficiency of the cells prepared in a small lot is 17.5% (AMO), and all the samples were qualified in space environment simulation tests.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Sivoththaman, W. Laureys, P. de Schepper, J. Nijs, R. Mertens
{"title":"Rapid thermal processing of conventionally and electromagnetically cast 100 cm/sup 2/ multicrystalline silicon","authors":"S. Sivoththaman, W. Laureys, P. de Schepper, J. Nijs, R. Mertens","doi":"10.1109/PVSC.1996.564205","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564205","url":null,"abstract":"100 cm/sup 2/ n/sup +/pp/sup +/ solar cells have been fabricated by rapid thermal processing (RTP) on conventionally cast (CC) and electromagnetically cast (EMC) multicrystalline silicon (mc-Si). All thermal steps were carried out by fast-ramp (>30/spl deg/C/s) RTP using tungsten-halogen lamps. Emitter and BSF were simultaneously formed by RTP co-diffusion of phosphorous and boron/or aluminum (50-60 seconds) and surface passivation by rapid thermal oxidation, RTO (40-50 seconds). The all-RTP process resulted in 14.1% and 13.3% efficient cells on CC and EMC mc-Si respectively. The EMC cells, when subjected to an additional plasma hydrogen treatment, improved to give the same efficiency as the CC mc-Si cells. Systematic lifetime measurements performed on these materials show that the degradation in the EMC mc-Si is mainly due to the activated crystallographic defects, responding favourably to hydrogenation treatments but poorly to RT-gettering treatments. On the other hand, significant gettering effects are observed in CC mc-Si.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123406975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Estimating and controlling chromatic aberration losses for two-junction, two-terminal devices in refractive concentrator systems","authors":"S. Kurtz, M. O'neill","doi":"10.1109/PVSC.1996.564020","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564020","url":null,"abstract":"Although previous studies have measured and calculated solar cell chromatic aberration losses and proposed methods for reducing these by modifying the optics, significant work remains to be done toward understanding how to quantify the losses and how various parameters affect this loss. This paper presents an analytical definition and calculation method for chromatic aberration losses in Ga/sub 0.5/In/sub 0.5/P/GaAs solar cells. The effects of sheet resistance of the midlayers of the cell, total irradiance, incident spectrum, cell width and diode quality factor are studied. A method for measuring the midlayer resistance in finished solar cells is also described.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123641599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of a low cost integrated 15 kW AC solar tracking subarray for grid connected PV power system applications","authors":"M. Stern, R. West","doi":"10.1109/PVSC.1996.564387","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564387","url":null,"abstract":"The Utility Power Group has reduced the installation cost of grid connected photovoltaic power systems through a two step approach of integrating and packaging all sub-array power conversion and control functions within a single factory produced enclosure and utilizing large area factory assembled photovoltaic panels. A modular 15 kW AC single axis solar tracking sub-array was designed to meet the requirements of Article 690 of the 1996 National Electrical Code and eight prototype sub-arrays are under construction in Sacramento, California for the Sacramento Municipal Utility District. This paper presents general design information and describes the cost savings associated with the utilization of an integrated approach to PV system cost reduction.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"447 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122596538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Gabor, J. Britt, A.E. Delahoy, R. Noufi, Z. Kiss
{"title":"Manufacturing-compatible methods for the formation of Cu(In,Ga)Se/sub 2/ thin films","authors":"A. Gabor, J. Britt, A.E. Delahoy, R. Noufi, Z. Kiss","doi":"10.1109/PVSC.1996.564271","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564271","url":null,"abstract":"The authors have developed suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in large-scale manufacturing equipment. Total-area solar cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub OC/ uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The fill factor of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122820675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Fahrenbruch, L. Lopez-Otero, J.G. Werthern, Ta C. Wu
{"title":"GaAs- and InAlGaAs-based concentrator-type cells for conversion of power transmitted by optical fibers","authors":"A. Fahrenbruch, L. Lopez-Otero, J.G. Werthern, Ta C. Wu","doi":"10.1109/PVSC.1996.563961","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563961","url":null,"abstract":"A novel application for high intensity GaAs-based solar cells is conversion of monochromatic light transmitted by fiber optics into electrical power for remote sensors. At present, the efficiencies of these devices are as high as 58%, and the systems can deliver 0.5 W electrical at distances of /spl ap/1 km. A typical OMCVD grown, six sector GaAs-based device, with an illuminated portion 0.15 cm in diameter, produces V/sub OC/=6.7 V, J/sub SC/=8.15 A/cm/sup 2/, and an efficiency of 55% under 820 nm illumination of 250 mW. Also reported are modeling and characterization of In/sub x/Al/sub y/Ga/sub 1-x-y/As devices for operation at 1320 nm, to examine the tradeoffs between increased fiber transmission, larger currents and lower voltages, relative to GaAs.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129793525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solar electric power for a better tomorrow","authors":"A. Barnett","doi":"10.1109/PVSC.1996.563935","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563935","url":null,"abstract":"The promise of solar electricity based on the photovoltaic (PV) effect is well known, but these systems are not common all over the world. Consumers in the USA are well-known for their attraction to new technology, but PV power systems are still not appearing on roof-tops in the US. The reason may be that grid-connected roof top systems are too difficult to acquire, too difficult to integrate with the grid, too difficult to measure the energy produced and too expensive. The author argues that it is essential that PV power systems are made user-friendly, while reducing the component and system costs. Elegant PV technology must be reduced to practical systems that can be used by the average person everywhere. Choosing the right problem will help achieve the promise of photovoltaics. This paper describes a methodology to choose the right problems as an approach to PV development. Solar cell and PV power system examples are presented.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129814677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Shreve, L. C. Dinetta, J. Cotter, J. Bower, T. R. Ruffins, A. Barnett
{"title":"Initial results for the silicon monolithically interconnected solar cell product","authors":"K. Shreve, L. C. Dinetta, J. Cotter, J. Bower, T. R. Ruffins, A. Barnett","doi":"10.1109/PVSC.1996.564216","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564216","url":null,"abstract":"This technology is based on AstroPower's electrostatic bonding and silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and processed to form the monolithically interconnected devices. These devices can be tailored for space and terrestrial applications. The costs of the monolithic interconnection compare favorably to labor intensive, conventionally strung solar cell arrays. Voltage and current outputs can be varied without varying the number of fabrication steps. Prototypes have demonstrated efficiencies greater than 11%. The monolithic approach has a number of inherent advantages for space and terrestrial photovoltaic products.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129593487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}