A. Fahrenbruch, L. Lopez-Otero, J.G. Werthern, Ta C. Wu
{"title":"GaAs- and InAlGaAs-based concentrator-type cells for conversion of power transmitted by optical fibers","authors":"A. Fahrenbruch, L. Lopez-Otero, J.G. Werthern, Ta C. Wu","doi":"10.1109/PVSC.1996.563961","DOIUrl":null,"url":null,"abstract":"A novel application for high intensity GaAs-based solar cells is conversion of monochromatic light transmitted by fiber optics into electrical power for remote sensors. At present, the efficiencies of these devices are as high as 58%, and the systems can deliver 0.5 W electrical at distances of /spl ap/1 km. A typical OMCVD grown, six sector GaAs-based device, with an illuminated portion 0.15 cm in diameter, produces V/sub OC/=6.7 V, J/sub SC/=8.15 A/cm/sup 2/, and an efficiency of 55% under 820 nm illumination of 250 mW. Also reported are modeling and characterization of In/sub x/Al/sub y/Ga/sub 1-x-y/As devices for operation at 1320 nm, to examine the tradeoffs between increased fiber transmission, larger currents and lower voltages, relative to GaAs.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.563961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
A novel application for high intensity GaAs-based solar cells is conversion of monochromatic light transmitted by fiber optics into electrical power for remote sensors. At present, the efficiencies of these devices are as high as 58%, and the systems can deliver 0.5 W electrical at distances of /spl ap/1 km. A typical OMCVD grown, six sector GaAs-based device, with an illuminated portion 0.15 cm in diameter, produces V/sub OC/=6.7 V, J/sub SC/=8.15 A/cm/sup 2/, and an efficiency of 55% under 820 nm illumination of 250 mW. Also reported are modeling and characterization of In/sub x/Al/sub y/Ga/sub 1-x-y/As devices for operation at 1320 nm, to examine the tradeoffs between increased fiber transmission, larger currents and lower voltages, relative to GaAs.