Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996最新文献_第4页

The EUCLIDES prototype: An efficient parabolic trough for PV concentration EUCLIDES原型:PV浓度的高效抛物线槽

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564348

G. Sala, J. C. Arboiro, A. Luque, J. Zamorano, J. Miñano, C. Dramsch, T. Bruton, D. Cunningham

引用次数: 26

Refractive spectrum splitting optics for use with photovoltaic cells 用于光伏电池的折射光谱分裂光学器件

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564371

A.K. Converse

引用次数: 6

Highly efficient crystalline silicon solar cells using a novel shallow angle metallization (SAM) technique 采用新型浅角金属化(SAM)技术的高效晶体硅太阳能电池

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564059

P. Fath, E. Bucher, G. Willeke

{"title":"Highly efficient crystalline silicon solar cells using a novel shallow angle metallization (SAM) technique","authors":"P. Fath, E. Bucher, G. Willeke","doi":"10.1109/PVSC.1996.564059","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564059","url":null,"abstract":"Based on mechanically V-grooved silicon substrates, a novel fine-line mask-free metallization technique-shallow angle metallization (SAM)-has been developed. One SAM method-shallow angle photolithography (SAP)-relies on V-grooved single side photoresist-coated specimen, which is illuminated under a shallow angle perpendicular to the groove direction. In this case the previous groove serves the following one as a shadowing mask. Applying lift-off or metal plating techniques, a fine-line contact grid with a minimum finger width of 10 /spl mu/m has been obtained without reflection loss due to finger metallization. Details of the optimization of the SAM technique are given. The local point contact and shallow angle evaporation (LOPE) technique is based on the mechanical formation of local openings at the V-groove tops through dielectric layers (SiO/sub 2/, and/or Si/sub 3/N/sub 4/) and the cell emitter followed by a selective and heavy diffusion. The point contacts are interconnected in a subsequent step by metal evaporation under a shallow angle. First results of this simple high efficiency metallization technique are discussed.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133552998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A competition of tracking photovoltaic systems in a southwestern electric utility transmission and distribution application 跟踪光伏系统在西南电力公司输配电中的应用竞赛

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564390

T. Hickman, P. Eckert, T. Lepley

引用次数: 2

Energy analysis of PV cladding systems 光伏包层系统能量分析

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564406

K. Hynes, N. Pearsall, M. Shaw, F. Crick

引用次数: 1

Improved stability in ECR-deposited a-Si solar cells 提高ecr沉积a-Si太阳能电池的稳定性

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564315

V. Dalal, S. Kaushal, R. Girvan, S. Hariasra, L. Sipahi

{"title":"Improved stability in ECR-deposited a-Si solar cells","authors":"V. Dalal, S. Kaushal, R. Girvan, S. Hariasra, L. Sipahi","doi":"10.1109/PVSC.1996.564315","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564315","url":null,"abstract":"We report on fabrication, properties and stability of a-Si:H and a-(Si,Ge):H solar cells made using remote low pressure ECR deposition. We have fabricated both substrate and superstrate type solar cells. We can make solar cells with high fill factors in both geometries, but the voltages are higher with substrate-type solar cells than with superstrate type cells. Special problems related to diffusion of B have to be solved in superstrate cells because the deposition is done at higher temperatures (350-375 C). Several novel p-layer grading schemes and buffer layers which allow us to fabricate these types of cells are described. The substrate cells were made with both H-ECR and He-ECR discharges. We find that while the cells prepared with He discharge have lower H concentration, and lower H content, they are less stable than cells prepared using H/sub 2/ discharges. The stability of cells was measured using ELH and xenon lamps, and compared with the stability of cells made using standard glow discharge techniques. We find that the cells prepared using H/sub 2/-ECR discharges are more stable than standard glow discharge cells with comparable fill factors, voltages and thicknesses of i layers. We also report on a new type of graded gap a-(Si,Ge):H cell, which appears to show improved stability.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133434052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A PV module that emulates an asphalt shingle 模拟沥青瓦的光伏模块

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564356

T. Glatfelter, S. Guha, K. Hoffman, C. Vogeli, J. Yang, K. Younan, J. Wishagen

引用次数: 0

Field collapse due to band-tail charge in amorphous silicon solar cells 非晶硅太阳能电池中带尾电荷引起的场塌陷

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564326

Qi Wang, R. Crandall, E. Schiff

{"title":"Field collapse due to band-tail charge in amorphous silicon solar cells","authors":"Qi Wang, R. Crandall, E. Schiff","doi":"10.1109/PVSC.1996.564326","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564326","url":null,"abstract":"It is common for the fill factor (FF) to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light charges much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, they measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133224482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Hot wire deposited hydrogenated amorphous silicon solar cells 热丝沉积氢化非晶硅太阳能电池

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564314

A. Mahan, E. Iwaniczko, B. Nelson, R. Reedy, R. Crandall, S. Guha, J. Yang

引用次数: 6

Solar cells with efficiencies above 21% processed from Czochralski grown silicon 太阳能电池的效率在21%以上，由Czochralski生长的硅加工而成

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564029

J. Knobloch, S. Glunz, D. Biro, W. Warta, E. Schaffer, W. Wettling

引用次数: 64