Field collapse due to band-tail charge in amorphous silicon solar cells

Qi Wang, R. Crandall, E. Schiff
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引用次数: 7

Abstract

It is common for the fill factor (FF) to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light charges much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, they measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.
非晶硅太阳能电池中带尾电荷引起的场塌陷
在氢化非晶硅太阳能电池中,填充因子(FF)随光照强度的增加而降低是很常见的现象。这对于较厚的太阳能电池来说尤其重要,因为这种下降比较薄的电池更严重。通常,均匀吸收的红光下的填充因子比强吸收的蓝光下的填充因子要高得多。这种现象通常被认为是由于深缺陷态中的空间电荷引起的。作者利用微电子和光子结构分析(AMPS)模拟程序模拟了太阳能电池的这种行为。仿真结果表明,填充因子的减小是由于光产生的空间电荷被捕获在带尾态而不是缺陷中。这种电荷屏蔽了外加电场,减小了内部电场。由于其较低的漂移迁移率,空穴产生的空间电荷超过了电子产生的空间电荷,是造成磁场屏蔽的主要原因。中隙状态的空间电荷相对于尾隙状态的空间电荷较小,在太阳能电池正常工作条件下可以忽略。实验上,他们测量光电容作为探测坍缩场的一种手段。他们还探讨了光电容对光强的依赖性,并解释了FF随光强增加而降低的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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